• Advances in aircraft and spacecraft science
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• 제1권1호
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• pp.15-25
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• 2014

The developed concept of smart flow control based on turbulence scale modification was applied to control a flow around a circular cylinder. The concept was realized using arrays of vortex-generators regularly spaced along a cylinder generatrix with a given step. Mechanical and thermal vortex-generators were tested, the latter having been based on the localized surface heating or plasma discharges initiated with microwave radiation near the surface. Thus depending on a particular engineering solution, flow transport properties could be modified in passive or active ways. Matched numerical and experimental investigations showed a possibility to delay flow separation and, accordingly, to improve the aerodynamic performance of blunt bodies.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 춘계학술발표회논문집(3)
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• pp.225-230
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• 1996

탄화규소(SiC)가 도포된 핵연료 제조를 위해 고온 연소 합성법(Self-propagating High Temperature Synthesis, SHS)이 적용되었으며, 반응물로 규소(Si) 분말, 규소 박막 (Si-thin film), 흑연 분말과 카본(C) 화이버가 사용되었다. 규소 박막은 프라즈마가 강화된 화학증착법(a microwave pulsed electron cyclotron resonance plasma enhanced chemical vapor deposition)으로 준비되었다. 그 결과 규소와 탄소의 고온 연소 합성반응 생성물은 반응물이 분말이거나 박막에 관계없이. 탄화규소(SiC)가 합성되었으며, 생성물의 형상(morphology)은 초기 탄소의 형상에 의존하였다. 본 연구를 통해 고온 연소 합성법이 탄화규소와 탄소가 도포된 핵연료 제조에 적용 가능함을 알 수 있었다.

• 전자공학회논문지A
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• 제29A권10호
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.49-54
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• 1998

The growth of diamond films in plasma enhanced chemical vapor deposition(PECVD) processes requires high substrate temperatures and gas pressures, as well as high-power excitation of the gas source. Thus determining the substrate temperature in this severe environment is a challenge. The issue is a critical one since substrate temperature is a key parameter for understanding and optimizing diamond film growth. The precise Si substrate temperature calibration based on rapid-scanning spectroscopic ellipsometry have been developed and utilized. Using the true temperature of the top 200 ${\AA}$ of the Si substrate under diamond growth conditions, real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystallind thin films prepared by PECVD. RTSE shows that a significant volume fraction of nondiamond(or{{{{ {sp }^{2 } -bonded}}}}) carbon forms during thin film coalescence and is trapped near the substrate interface between ∼300 ${\AA}$ diamond nuclei.

• 마이크로전자및패키징학회지
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• 제8권1호
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• pp.39-43
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• 2001

$SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1490-1492
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• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.1211-1214
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• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.56-56
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• 1999

수소화된 비정질 탄소(a-C:H0는 그 형성 조건에 따라서 여러 가지 다른 구조와 특성을 갖게 되며, 특히 DLC(diamond-like carbon)-FED(field emission display) 개발 면에서 중요하게 연구되고 있다. 본 연구에서는 a-C:H 박막을 PECVD(plasma-enhanced chemical vapor deposition) 방법으로 증착하고 주고 ESR 및 Raman 측정을 통하여 그 결과를 조사해 보았다. PECVD 증착가스는 CH4 가스를 사용하였다. 기판은 Corning 1737 glass를 사용하였고, 기판 온도는 32$0^{\circ}C$이었다. 증착 압력과 R>F. power는 각각 0.1-1 Torr 와 12-36 W 사이에서 변화되었다. ESR를 피하기 위하여, microwave power에 대한 ESR 신호 의존성을 측정하고 포화효과를 피하기 위한 Raman spectroscopy로 분석하였다. R.F.power가 증가할수록 증착속도는 0.06 nm/sec 정도까지 대체로 증가하였으나, pressure가 1 Torr 일때는 같은 R.F. power로써 증착이 일어나지 않는 경우도 발생하였다. 증착된 a-C:H 박막은 R.F.power가 증가할수록 스핀밀도의 증가가 두드러졌으며, 기타 증착가스 압력 등의 증착 조건에 따른 ESR 및 Raman 스펙트럼의 변화를 관찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.569-572
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• 2001

Selective. highly stable determination of epinephrine(adrenalin) was achieved in cyclic voltammetric measurement carried out at electrochemically treated conductive boron-doped diamond electrode. Boron-doped diamond electrodes were prepared on single crystal Si wafers by microwave plasma chemical vapor deposition and $B_{2}O_{3}$ was dissolved in acetone/methanol(9:1) mixture solution so that the B/C weight ratio ca. $10^{4}ppm$. Epinephrine is a kind of catecholamines, which secreted from adrenal marrow cells. The serious problem to detection of epinephrine is the interference phenomena of electroactive constituent. including AA. In this study. electrochemical treatment of BDD was carried out to discriminate between epinephrine and AA responses. Experimental results showed that the peak potential of AA oxidation shift to the positive direction and the oxidation peak of epinephrine was unchanged. The effect of electrochemical treatment was maintained up to 40hrs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1542-1545
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• 2002

Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.