• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.983-989
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• 2012

The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.373-376
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• 1997

Diamond thin films were deposited on P-type(100) Si wafers using MPECVD. Prior to deposition, mechanical scretching was done to improve density of nucleation sites with diamond paste of 0.25${\mu}{\textrm}{m}$ size. Diamond films were deposited under the following conditions : methane concentration of 0.5~5%, oxygen concentration of 0~70%, process pressure of 70Torr, process temperature of 900~95$0^{\circ}C$, and deposition time 5hrs. The changes of the morphology and the growth rates of the deposits with the experimental conditions are expriend by Scanning Electron Microscopy. Raman Spectroscopy and X-ray Diffraction method.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.577-584
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• 1996

Silicon oxide films with high hardness and water repellency were prepared by microwave plasma-enhanced CVD using four kind of organosilicon compound-fluoro-alkyl silane mixtures as source gases. An argon gas was used as a carrier gas for fluoro-alkyl silane. The substrate temperatures during deposition were controlled by resistant heating at a constant value between 50 and $300^{\circ}C$. The hardness of the films increased, but the deposition rate and the contact angle for a water drop decreased with increasing substrate temperature. The number of methoxy groups also affected the water repellency and hardness. The deposited films became more inorganic with increasing substrate temperature because of the thermal dissociation of reactants.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.33-38
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• 2002

In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.303-306
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• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• Bulletin of the Korean Chemical Society
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• v.16 no.11
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• pp.1023-1027
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• 1995

A comparative study of different torches in the Microwave Induced Plasma is reported. Three types of torches that have been used in this area are characterized and compared with each other. Especially, recently developed laminar flow torches have been optimized in design and analytical performances. The ratio of inner to outer tubes is found to be the most important parameter. As inner tube size increases, recirculating region also increases and consequently, sensitivity becomes better. An optimized laminar flow torch has been coupled to a gas chromatography and examined for halogen compounds. Detection limits are 25 pg s-1 for Cl and 12 pg s-1 for Br. These values are improved over the conventional laminar flow torch.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1706-1711
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• 2016

Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.287-287
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• 2009

The characteristics of slow wave structure employed for backward wave oscillators expected to be a high power microwave source are studied analytically and experimentary. The slow wave structure is a sinusoidally corrugated wall waveguide The dispersion relationn and transmitted characteristics for microwaves are measured in the air. There exist literatures on high efficiency of enhanced radiation from backward wave oscillators involving plasma studied experimentally.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.98-101
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• 1994

white diamond thin film, which should be compposed of almost ppure diamond, could be successfully obtained under high ppressure conditions(above 150 Torr) by means of MppECVD(microwave pplasma enhanced chemical vappor depposition, ASTeX 1.5 kW). Characteristics of the films with varing expperimental pparameters have been examined. From the expperimental results, we will discuss the surface morpphology and the growth mechanism of the films.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2009.03a
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• pp.168-170
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• 2009