• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.198-200
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• 2015

The microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow a carbon nanowall (CNW) on a silicon (Si) substrate with hydrogen (H₂) and methane (CH₄) gases. To find the growth mechanism of CNW, we increased the growth time of CNW from 5 to 30 min. The vertical and surficial conditions of the grown CNWs according to growth time were characterized by field emission scanning electron microscopy (FE-SEM). Energy dispersive spectroscopy (EDS) measurements showed that the CNWs consisted solely of carbon.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.65-70
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• 2006

Carbon nanotubes (CNT) grown by chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD), and followed by annealing at $400{\sim}500^{\circ}C$ were investigated for gas sensing under 1.5ppm $NO_{2}$ concentration at an operating temperature of $200^{\circ}C$. The electrical resistance of CNT sensor decreased with temperature, indicating a semiconductor type. The resistance of CNT sensor decreased with $NO_{2}$ adsorption. It was found that the sensitivity of sensor was affected by humidity and decreased under microwave irradiation for 3 minutes. The CNT sensor grown by PECVD had a higher sensitivity than that of CVD.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.158.1-158.1
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• 2013

Microwave는 일반적으로 300 [MHz]~30 [GHz] 사이의 주파수를 가지는 전파로 1 [m] 이하의 파장을 가진다. Microwave를 이용한 플라즈마의 경우 낮은 이온 에너지, 효율적인 전자 가열, 넓은 동작압력 범위, 높은 밀도 등의 장점을 가지고 있어 PECVD(Plasma Enhanced Chemical Vapor Deposition)에 적합한 플라즈마 소스라고 할 수 있다. 또한 Microwave는 파장의 길이가 증착이 이루어지는 진공 챔버의 길이보다 매우 작기 때문에 대면적 적용성이 용이하므로 현재 많은 연구가 이루어지고 있다. 본 연구에서는 Fluid Simulation을 통해 Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 플라즈마 parameter를 계산하고, 자체 제작한 Linear microwave plasma 장치에서 정전 탐침(Langmuir Probe)을 이용하여 플라즈마 Parameter를 측정하였다. 또한 Simulation 결과와 실험결과를 비교 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.131.2-131.2
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• 2015

마이크로웨이브를 이용한 플라즈마는 효율적인 전자가열이 가능하며, 낮은 이온에너지를 가지는 고밀도 플라즈마를 생성시킬 수 있다는 장점이 있다. 최근 산화물 반도체 및 대화면 디스플레이 장치내 소자의 보호막 증착용으로 저온 PECVD (Plasma Enhanced Chemical Vapor Deposition) 공정 및 장치의 필요성에 따라 마이크로웨이브를 이용한 PECVD 장치가 주목 받고 있다. 본 연구에서는 실리콘 나이트라이드 공정 장치 개발을 위한 2차원 시뮬레이션 모델을 완성하였다. Global modeling을 이용하여 확보한 Chemical reaction data에 대한 검증을 하였다. Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 전자 밀도, 전자 온도등의 플라즈마 변수의 변화를 관찰하였다. 또한 Navier Stokes equation을 추가하여 챔버 내의 Gas flow의 흐름을 고려한 시뮬레이션을 진행하여 분석하였다.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.49-54
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• 1998

The growth of diamond films in plasma enhanced chemical vapor deposition(PECVD) processes requires high substrate temperatures and gas pressures, as well as high-power excitation of the gas source. Thus determining the substrate temperature in this severe environment is a challenge. The issue is a critical one since substrate temperature is a key parameter for understanding and optimizing diamond film growth. The precise Si substrate temperature calibration based on rapid-scanning spectroscopic ellipsometry have been developed and utilized. Using the true temperature of the top 200 ${\AA}$ of the Si substrate under diamond growth conditions, real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystallind thin films prepared by PECVD. RTSE shows that a significant volume fraction of nondiamond(or{{{{ {sp }^{2 } -bonded}}}}) carbon forms during thin film coalescence and is trapped near the substrate interface between ∼300 ${\AA}$ diamond nuclei.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.3
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• pp.422-428
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• 2015

A 2.45GHz microwave plasma source with a linear antenna has been developed for low temperature large scale deposition processing. Microwave power is transmitted through WR340 waveguide and a copper rod, linear antenna, is located in a quartz tube. The power matching is effectively achieved by a linear antenna is located at ${\lambda}_g/4$ or $3{\lambda}_g/4$ from the end of WR340 waveguide. The Ar plasma was generated along the surface of quartz tube and a clear standing wave pattern with nearly 10cm wavelength was observed at Ar pressure of 200mTorr and 200W input power. The electron density and electron temperature were investigated by using the electrostatic probe. The electron density and electron temperature were highly measured near the surface of quartz tube. Ar plasma density along the quartz tube is mostly uniform despite standing wave set-up and antenna of long length. A uniform temperature was measured at 10~40cm distance from the end quartz tube and 5cm distance from the surface of quartz tube.

• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.277-285
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• 1992

플라즈마 화학기상증착법과 저압 화학기상증착법을 사용하여 실리콘 기판 위에 텅 스텐 박막을 증착하였다. 반응기체로 WF6를 사용하였으며 환원기체로는 SiH4를 사용하였다. 플라즈마 증착법에 의한 텅스텐 박막의 성장은 환원기체의 유무에 상관없이 주로 기상 반응 에 의한 텅스텐 덩어리들의 증착에 의하여 이루어졌으며 비교적 균일도가 낮은 박막표면을 이루었다. 저압 화학증착법의 경우 환원기체를 사용하지 않았을 때에는 실리콘 기판에 의한 제한된 환원반응에 의해 텅스텐이 증착되었으나, 환원기체를 사용했을 때에는 초기의 실리 콘 기판에 의한 환원반응과 이어 일어나는 SiH4 기체와의 불균일계 환원반응의 두 단계반응 에 의하여 텅스텐 박막 증착이 이루어졌다. 저압 화학증착법의 경우 텅스텐 박막의 특성은 플라즈마 증착법에서 보다 우수하였으며 박막 성장은 island by island 양식을 따르는 것으 로 추정되었다. 박막은 $\alpha$-W의 체심입방 구조로 이루어졌으며 박막이 성장함에 따라 단결정 구조가 증가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.56-56
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• 1999

수소화된 비정질 탄소(a-C:H0는 그 형성 조건에 따라서 여러 가지 다른 구조와 특성을 갖게 되며, 특히 DLC(diamond-like carbon)-FED(field emission display) 개발 면에서 중요하게 연구되고 있다. 본 연구에서는 a-C:H 박막을 PECVD(plasma-enhanced chemical vapor deposition) 방법으로 증착하고 주고 ESR 및 Raman 측정을 통하여 그 결과를 조사해 보았다. PECVD 증착가스는 CH4 가스를 사용하였다. 기판은 Corning 1737 glass를 사용하였고, 기판 온도는 32$0^{\circ}C$이었다. 증착 압력과 R>F. power는 각각 0.1-1 Torr 와 12-36 W 사이에서 변화되었다. ESR를 피하기 위하여, microwave power에 대한 ESR 신호 의존성을 측정하고 포화효과를 피하기 위한 Raman spectroscopy로 분석하였다. R.F.power가 증가할수록 증착속도는 0.06 nm/sec 정도까지 대체로 증가하였으나, pressure가 1 Torr 일때는 같은 R.F. power로써 증착이 일어나지 않는 경우도 발생하였다. 증착된 a-C:H 박막은 R.F.power가 증가할수록 스핀밀도의 증가가 두드러졌으며, 기타 증착가스 압력 등의 증착 조건에 따른 ESR 및 Raman 스펙트럼의 변화를 관찰하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.4
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• pp.567-572
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• 2015

Discharge characteristics of linear microwave plasma were investigated by using fluid simulation of 2D axis-symmetry based on finite elements method. The microwave power was 2.45 GHz TEM mode and transmitted through linear antenna. Resistive power and pressure were considered simulation variables and argon was used for working gas. A decrease of electron density along the quartz tube was observed in low power condition but relatively uniform plasmas were generated in chamber by increasing the resistive power. The electron temperature was highly detected near the surface of quartz tube because the electron was heated only dielectric surface. The power transmission efficiency decreased and characteristics of surface plasma were observed in high electron density condition.