• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.863-871
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• 2003

In this paper, we design a high stable Ku-band phase-locked dielectric resonant microwave oscillator with the gate voltage controls of p-HEMT. By adapting the nonlinear equivalent elements which affects phase noise of microwave oscillator, we optimize the nonlinear elements of p-HEMT to have low phase noise operation. Using the scattering parameters according to bias voltages, we designed the gate voltage control microwave dielectric resonant oscillator and phase-locked loop circuits is applied to have the high stable operations. Designed microwave oscillator as a local oscillator of digital microwave communication shows that output power is 9.17dBm at 10.75GHz and it's phase noise is -88dBc/Hz at 10KHz offset frequency.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.3
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• pp.20-25
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• 1975

A microwave oscillator stabilized by a phase-locked loop (PLL) is developed. The PLL system is chosen 'compared with the cavity stabilized oscillator in view of the domestic manufacturing, because special machining and materials are needed for the latter. A sampler with a low pass filter is shown to be used as a phase detector in the PLL, and the sampler capable of sampling up to 4GHz is developed for this use. Frequency stability of about 10-6 is obtained from the developed microwave oscillator, operating at 2.16 GHz with more than 120 milliwatts output power, Ivhereby a crystal oscillator operating at about 110MHz is used as a reference source in the PLL. The capturing range of this oscillator is extended up to its lock-in-range of about 10MHz by employing a search oscillator in the system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.481-481
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• 2007

The characteristics of slow wave structure employed for backward wave oscillator expected to be a high power microwave source are studied analytically. The slow wave structure is a sinusodially corrugated wall waveguide. The waveguide is designed and transmitted characteristics for microwave are measured in the air. There exist literatures on high efficiency of enhansed radiation from backward wave oscillators involving plasmastudied experimentally another results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.151-158
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• 2002

In this paper, Phase locked microwave oscillator having the low phase noise and high stability for digital MMDS down converter was designed. we have been analyzed the low phase noise properties by the active device nonlinear equivalent circuits and derived the necessary and sufficient conditions for high stable voltage control oscillator. And it is applied to phase locked loop, we design the phase locked microwave oscillator of frequency synthesizer. Experimental results of designed phase locked oscillator shows -85dBc/Hz @ 10KHz phase noise properties and simulation result is -90Bc/Hz @ 10kHz respectively we shows that proposed low phase noise and stable conditions of phase locked microwave oscillator can be applied to design the high stable digital MMDS frequency synthesizer.

• Current Optics and Photonics
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• v.2 no.1
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• pp.96-100
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• 2018

A tunable low-phase-noise microwave generation structure that utilizes an optoelectronic oscillator (OEO) and a fiber Bragg grating (FBG) is proposed and experimentally demonstrated in this article. This structure has no particular requirement for the band width of the laser, and its tunability is realized through adjusting the central frequency of the tunable FBG. A detailed theoretical analysis is established and confirmed via an experiment. A high-purity microwave signal with a frequency tunable from 6 to 12 GHz is generated. The single-sideband phase noise of the generated signal at 10.2 GHz is -117.2 dBc/Hz, at a frequency offset of 10 kHz.

• Journal of electromagnetic engineering and science
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• v.5 no.4
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• pp.153-160
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• 2005

In this paper, the novel microwave oscillator incorporating a planar cavity resonator(PCR) is presented to reduce the phase noise of the oscillator in a planar environment. Compared to the conventional planar( $\lambda$/4 open stub resonator), the phase noise is improved about 16 dBc/Hz @100 kHz. The design of the oscillator is based on a reflection type configuration using the low 1/f SiGe HBT transistor(LPT16ED). The output power is measured 2.76 dBm at 12.5 GHz. In this paper, the oscillator used to the PCR can be expected to provide a solution for low phase noise oscillator in microwave circuits.

• ETRI Journal
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• v.28 no.4
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• pp.529-532
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• 2006

This letter describes a compact printed helical resonator and its application to a microwave oscillator circuit implemented in coplanar waveguide (CPW) technology. The high quality (Q)-factor and spurious-free characteristic of the resonator contribute to the phase noise reduction and the harmonic suppression of the resulting oscillator circuit, respectively. The designed resonator showed a loaded Q-factor of 180 in a chip area of only 40% of the corresponding miniaturized hairpin resonator without any spurious resonances. The fully planar oscillator incorporated with this resonator showed an additional phase noise reduction of 10.5 dB at a 1 MHz offset and a second harmonic suppression enhancement of 6 dB when compared to those of a conventional CPW oscillator without the planar helical resonator structure.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.101-106
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• 2005

This paper presents a new microwave oscillator incorporating a corrugated coplanar waveguide (CCPW) electromagnetic bandgap (EBG) structure as its terminating resonance component. The use of a compact CCPW EBG structure was effective in reducing the phase noise and improving the harmonic characteristics of the microwave oscillator circuit without additional backside processing and drastic size increment. The fully planar CCPW oscillator oscillating at the frequency of 5.41 GHz showed a phase noise characteristic of -90.7 dBc/Hz at 100kHz offset and a second harmonic suppression of 42.67 dB.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.20-25
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• 1982

A realization method of the microwave oscillator is proposed by the inherently stable transistor with a cavily resonator feedback loop. The real Part of the output impedance of the inherently stable bipolar transistor can be made to be negative at the resonance frequency by the high-Q cavity feedback loop, and the oscillation condition can be obtained with the matching section of the load. In this work the microwave transistor oscillator is realized with a silicon bipolar transistor HXTR 2101 and a reentrani cavity, and characteristic of the output power 10m Watts at 2.33 GHz osc. frequency can be verified experimentally.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.897-903
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• 2009

We have designed the backward wave oscillator. A power-pulsed generator oscillated at 24 GHz has higher frequency than current one. It is very inportant to prevent microwave from going into the beam diode, since intence microwave will harmfully affect beam generation. Due to the axial mode operation, there exist a critial value of beam energy for the oscillation. By changing the condition at the SWS end, an enhanced performance of the K-band oversized BWO is observed in a low magnetic field region about 0.8T.