• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.261-271
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• 2017

Environment-friendly $(K,Na)NbO_3-based$ (KNN) lead-free piezoelectric materials have been studied extensively in the past decade. Significant progress has been made in this field, manifesting competitive piezoelectric performance with that of lead-based, for specific application scenarios. Further understanding of the relationship between high piezoelectricity and microstructure or more precisely, ferroelectric domain structure, domain wall pinning effect, domain wall conduction and local polarization switching underpins the continuous advancement of piezoelectric properties, with the help of piezoresponse force microscopy (PFM). In this review, we will present the fundamentals of scanning probe microscopy (SPM) and its cardinal derivative in piezoelectric and ferroelectric world, PFM. Some representative operational modes and a variety of recent applications in KNN-based piezoelectric materials are presented. We expect that PFM and its combination with some newly developed technology will continue to provide great insight into piezoelectric materials and structures, and will play a valuable role in promoting the performance to a new level.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.197-204
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• 2019

An electrochemical oxygen permeating membrane (OPM) is fabricated using Zr_0.895Sc_0.095Ce_0.005Gd_0.005O_2-δ (ScCeGdZ) as the solid electrolyte and aLa_0.7Sr_0.3MnO₃-bScCeGdZ composite (LZab, electrode) as the electrode. The crystal phase of the electrode and the microstructure of the membrane is investigated with X-ray diffraction and scanning electron microscopy. The electrochemical resistance of the membrane is examined using 2-p ac impedance spectroscopy, and LZ55 shows the lowest electrode resistance among LZ82, LZ55 and LZ37. The oxygen permeation is studied with an oxygen permeation cell with a zirconia oxygen sensor. The oxygen flux of the OPM with LZ55 is nearly consistent with the theoretical value calculated from Faraday's Law below a critical current. However, it becomes saturated above the critical current due to the limit of the oxygen ionic conduction of the OPM. The OPM with LZ55 has a very high oxygen permeation flux of ~ 3.5 × 10^-6 mol/㎠s in I = 1.4 A/㎠.

• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.97-102
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• 2011

Different amounts of excess lithium in the range of x = 0~0.3 were added to $Li_{1+x}[Mn_{0.720}Ni_{0.175}Co_{0.105}]O_2$ cathode materials synthesized using the co-precipitation method to investigate its microstructure and electrochemical properties. Pure layered structure without impurities was confirmed in the XRD pattern analysis and increasing peak intensity of $Li_2MnO_3$ was observed along with the addition of over 0.2 mol Li. The initial discharge capacity of the stoichiometric composition was determined to be 246 mAh/g, while the discharge capacity of the addition of 0.1 mol Li was obtained to be 241 mAh/g, which was not significantly different from that of the stoichiometric composition. However, the discharge capacities decreased dramatically after the addition of 0.2 and 0.3 mol Li to 162 mAh/g and 146 mAh/g, respectively. In the rate capability test, the active $Li_{1+x}[Mn_{0.720}Ni_{0.175}Co_{0.105}]O_2$ cathode material of the stoichiometric composition showed a dramatic decrease in its discharge capacity with increasing C-rate, as evidenced by the result that the discharge capacity at 5C was 13% compared with 0.1C. On the other hand, the discharge capacity of compositions containing excess lithium was improved at higher current rates. The cycling test showed that the composition containing an excess of 0.1 mol Li had the most outstanding capacity retention.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.11-18
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• 1996

The variation of electrical conductively and Seebeck coefficient of FeSi2 according to the density of the specimen has been observed over the temperature range 50 to $700^{\circ}C$. A conventional pressureless sintering method with various sintering time (0, 0.5, 1, 5h) at $1190^{\circ}C$ and/or various sintering temperatures(1160, 1175, 1190, $1200^{\circ}C$) for 2 h was carried out to prepare $FeSi_2$ specimens having various densities. The relationship between the electrical conductivity and Seebeck coefficient was investigated after two steps of annealing (at $865^{\circ}C$ and then $800^{\circ}C$ for total 160h) and thermoelectric measurement. The electrical conductivity for the specimens showed a typical tendency of semiconductor, the average activation energy of which in the intrinsic region (above $300^{\circ}C$) was observed approximately as 0.452 eV, and increased slightly with density. On the other hand, the specimen of the lower density showed the higher value of Seebeck coefficient in the intrinsic region. As the temperature fell into the non-degenerate region, the highly densified specimen which had relatively little residual metal phase showed the higher value of Seeback coefficient. The power factor of all specimens showed the optimum value at $200^{\circ}C$. However, the power factor of the specimen of the lower density increased again from $400^{\circ}C$ and that of the higher dense specimen increased from $500^{\circ}C$. The power factor was more affected by Seebeck coefficient than electrical conductivity over all temperature range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.386-391
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• 1996

SiC particles (average size is 270 nm) of 0, 10, 20, 30, 40 vol% were dispersed in $Si_{3}N_{4}$, and $Si_{3}N_{4}/SiC$ nanocomposites were fabricated by hot press. After sintering, matrix phase, ${\alpha}-Si_{3}N_{4}$ was transformed to ${\beta}-Si_{3}N_{4}$, and second phase, ${\beta}-SiC$ was not changed. No grain boundary crystalline phase by adding of sintering additives was detected. Grain growth of $Si_{3}N_{4}$ was supressed with increasing of SiC contents, and then fine grain was occurred. The highest fracture strength was obtained at 10 vol% SiC, and fracture toughness was decreased, but hardness was linearly increased with SiC content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.222-226
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• 2006

Effects of a carboxylated styrene-butadiene-based liquid additive on the microstructure, mechanical strength and decolorization resistance of inorganic pigment layer in the color block have been examined. More dense inorganic pigment layer characterized by lower apparent porosity, lower water absorption and uniform pigment distribution has been achieved by incorporation of a liquid additive. Also significant enhancements in the mechanical strength and decolorization resistance have been observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1092-1098
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.118-124
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• 2004

The properties of AlN made by carbothermal reaction depend on the starting materials, quantity of liquid, the liquid-vapor phase reaction, the N$_2$ flow rate, and the reaction temperature. AlN whisker was synthesized by the VLS and VS methods. Solid ${\alpha}$-A1$_2$O$_3$(AES-11) was carbothermally reduced with carbon black in a high-purity N$_2$ atmosphere with AlF$_3$ to cause whisker grown and additional aluminum liquid to increase whisker yield. Aluminum nitride was perfectly formed at reaction temperatures of 1600$^{\circ}C$. At reaction temperature higher than 1600$^{\circ}C$ the aluminum nitride was completely formed, while the composition remains unaffected. Needle-shaped whiskers formed best at 1600$^{\circ}C$ while higher temperatures disrupted whisker formation. Adding 0 to 15 wt% aluminum to the synthesis favorably affects the microstructure for formation of needle-shaped AlN whisker. Additions over 15 wt% degraded formation of AlN whisker.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.530-538
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• 2003

Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+}$$\delta$/ (110 K phase) high $T_{C}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with 5~50 wt％ MgO were sintered at 820~86$0^{\circ}C$ for 24 h. The structural characteristics, critical temperature and grain size of the samples with different MgO contents were analyzed by XRD and SEM. As the MgO content increased, the intensity of MgO peaks and ratio of Bi-2212 phase in superconductors were intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.d.creased.d.