• Title/Summary/Keyword: Microstrip-to-Waveguide Transition

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Improved Coplanar Waveguide-to-Microstrip Right-Angled Transition using an Offset Microstrip Section (Offset Microstrip을 이용한 Coplanar Waveguide-to-Microstrip Right-Angled 전이의 특성 개선)

  • 이맹열;이해영
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.5
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    • pp.445-450
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    • 2002
  • We analyzed and measured a CPW(coplanar waveguide)-to-microstrip right-angled transition. Asymmetric CPW-to-microstrip transitions show significant resonances by the slot mode generation at the discontinuities. The air-bridge just shifting the resonance frequency can not fundamentally suppress the occurrence of the slot mode. So, we proposed the structure using offset microstrip section to eliminate the resonance. The proposed structure may be useful for the application of multi-layed structure.

A New Broadband Microstrip-to-SIW Transition Using Parallel HMSIW

  • Cho, Dae-Keun;Lee, Hai-Young
    • Journal of electromagnetic engineering and science
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    • v.12 no.2
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    • pp.171-175
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    • 2012
  • In this work, a new microstrip-to-substrate integrated waveguide (SIW) transition using the parallel half-mode substrate integrated waveguide (HMSIW) is proposed. The proposed transition consists of three sections : a microstrip, parallel HMSIWs, and an SIW. By inserting the parallel HMSIWs section between the microstrip section and the SIW section, the proposed transition can improve the return loss characteristics of the near cut-off frequency because the HMSIWs section has a lower cut-off frequency than the SIW section (8.6 GHz). The lower cut-off frequency is achieved through gradual electromagnetic field mode changes for a low reflection. The measured return loss is less than 20 dB in the of 9.1~16.28 GHz freqeuncy range for the back-to-back transition. The measured insertion loss is within 1.6 dB for the back-to-back transition. The proposed transition is expected to play an important role in wideband SIW circuits fed by a microstrip.

Design and Fabrication of the Ka-band Waveguide to Microstrip Transition using Probe structure (프로브 구조를 이용한 Ka 대역 도파관-마이크로스트립 트랜지션의 설계 및 제작)

  • Kwon, Hyuk-Ja;Lee, Sung-Ju;Jang, Ho-Joon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.7
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    • pp.67-71
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    • 2008
  • We report the waveguide to microstrip transition using probe structure for Ka-band transceiver. The waveguide to microstrip transition is composed of probe, inductive line, ${\lambda}/4$ impedance transformer, and $50{\Omega}$ microstrip line. For design of the transition, we optimized the characteristic impedances and the lengths of the component parts. The fabricated transition exhibits an insertion loss of 1.3 dB and the input/output return losses of below 14 dB between 30 and 40 GHz. The insertion loss of each transition is about $0.5{\sim}0.6dB$, considering the losses in the microstrip line and input/output waveguides.

Technical Research on Waveguide-to-Microstrip Transition Using an Inline Structure for Millimeter-Wave Seekers (Inline 구조를 이용한 밀리미터파 탐색기용 도파관-마이크로스트립 전이구조 기술 연구)

  • Park, Sang Woo;Lee, Dong Jae;Song, Sung Chan;Lee, Man Gyu;Kim, Yong Hwan;Kim, Jeong Ryul;Hong, Dong Hee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.1
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    • pp.54-59
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    • 2019
  • In this paper, we report on the waveguide-to-microstrip transition with an inline structure for the millimeter band. The waveguide-to-microstrip transition comprises a probe, an inductive line, a ${\lambda}/4$ impedance transformer, and a 50-ohm microstrip line. For the transition design, we optimized the characteristic impedances and lengths of the component parts. The fabricated transition exhibits an insertion loss of 2.1 dB and an input/output return loss of below 13 dB at a millimeter band frequency of 94 GHz.

Design of Q-band Mode Converter with the Discontinuity Compensation and Its Application to Waveguide Mixer Module (불연속을 보상한 Q밴드 모드 변환기의 설계 및 도파관 혼합기 모듈 제작에의 응용)

  • 한상은;이종환;염경환
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.11
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    • pp.1198-1206
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    • 2003
  • In this paper, a MMIC waveguide mixer module based upon the novel suggested mode converter for wave-guide-to-microstrip transition was fabricated and measured. The insertion and return losses of the mode converter was optimized by compensating the discontinuity effect between ridge and microstrip with the modification of 50 $\Omega$ microstrip line pattern. Due to the low loss nature of the mode converter, a millimeter wave MMIC mixer chip can be successfully applied as a waveguide module for mmW waveguide communication system. The measured results of the module showed the successful MMIC chip application in waveguide and the negligible degradation of the supplied chip specification.

Ku-Band Transitions between Microstrip and Substrate Integrated Waveguide and Microstrip and Hollow Substrate Integrated Waveguide (Ku-대역 마이크로스트립-SIW 및 마이크로스트립-HSIW 천이 구조)

  • Hong, Sung-June;Kim, Seil;Lee, Min-Pyo;Lim, Jun-Su;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.95-103
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    • 2019
  • In this paper, we present a microstrip-to-substrate integrated waveguide(SIW) transition and microstrip-to-hollow SIW(HSIW) transition for Ku-band satellite communication systems. For the complete utilization of the HSIW, a structure filled with air instead of a dielectric material, a microstrip-to-HSIW transition is designed, fabricated, and compared with a microstrip-to-SIW transition. A back-to-back microstrip-to-SIW transition is measured in the range 12~18 GHz; it exhibits a return loss ${\geq}20dB$ and an insertion loss of $1.5{\pm}0.2dB$. In contrast, a back-to-back microstrip-to-HSIW transition exhibits a return loss of at least 15 dB and an insertion loss of $0.55{\pm}0.2dB$ in the same frequency range.

Application of Expanding-cell FDTD Method to Microstrip-to-Waveguide Transition (Expanding-cell 유한차분법의 마이크로스트립-도파관 변환기에의 적용)

  • 강희진;최재훈
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.3
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    • pp.345-351
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    • 2000
  • In this paper, we design and analyze a Ka-band microstrip line to rectangular waveguide transition using the expanding-cell FDTD method. The transition under investigation consists of a ridged waveguide, microstrip line, and $\lambda$/4 Chebyshev impedance transformer. To improve the accuracyand efficiency, the expanding-cell FDTD method is applied to analyze the characteristics of a ridged waveguide impedance transformer. To verify the accuracy of the expanding-cell FDTD method, S parameters of the analyzed transition are compared with those of experimental data. The efficiency of the present approach is verified by comparing the computational time for expanding-cell and that for fine cell. The relation between the number of step and operation bandwidth is analyzed by comparing the characteristics of four and three step Chebyshev waveguide impedance transformer.

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Design of Low-loss Microstrip-to-Waveguide Inline Transition Structure (저손실 마이크로스트립-도파관 inline 전이구조 설계 )

  • Young-Gon Kim;Han-Chun Ryu;Se-Hoon Kwon;Seon-Keol Woo
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.4
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    • pp.29-34
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    • 2023
  • A clear and efficient design method for a microstrip-to-waveguide inline transition, which is based on an analytical model, is presented. The transition consists of three parts: a microstrip-to-SIW transition, a dielectric-loaded waveguide with substrate-height, and a stepped-height waveguide. The shape of the transitional structure is formed for impedance matching. Two equivalent type0s of dielectric-loaded transitional structures are proposed. The design method is applicable to any size of the waveguide, but a design method of two Ka-band transitions is demonstrated. The proposed transitions, in a back-to-back configuration, have less than 1.2 dB insertion loss and more than 15 dB return loss from 29.8 GHz to 38.2 GHz.

Design and fabrication of rectangular waveguide-to-microstrip transition at Ka-band (Ka-band에서의 구형 도파관-마이크로스트립 변환구조의 설계 및 제작에 관한 연구)

  • 정진호;권영우;장영춘;천창율
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.23 no.7
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    • pp.1770-1776
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    • 1998
  • This paper presents a waveguide-to-mircostrip transition at Ka-band using antipodal finlines. Critical design parameters were identified with the help of theoretical analysis. Experimental optimization was performed together with 3-D FEM analysis in an effort to find optimum dimensions of the transition. In addition to the conventional antipodal finline transition, a new dielectric impedance transformer was introduced to further reduce the insertion loss. Optimized waveguide-to-microstrip transition showed an insertion loss of 0.3~0.4dB/transition at Ka-band. This transition provides superior reproducibility and better performance than conventional coaxcable-to-microstrip transition.

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Wide Band Microstrip line-to-Rectangular Waveguide Transition Using a Radial Probe for Millimeter-wave Applications (밀리미터파 응용을 위해 Radial 프로브 마이크로 스트립-웨이브 가이드 광대역 천이기)

  • Lee, Young Chul
    • Journal of Korea Society of Industrial Information Systems
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    • v.20 no.1
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    • pp.43-47
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    • 2015
  • In this work, a broadband microstrip (MSL) - to - waveguide (WR12) transition has been presented for millimeter-wave module applications. For improvement of a bandwidth, the radial MSL electrical-probe is designed on the low-loss organic dielectric substrate. The designed and tested characteristics of the proposed transition are characterized in terms of an insertion and return loss. Considering the loss contribution of the cable adapter and waveguide transition for the measurement, the proposed transition loss can be analyzed as -1.88 and -2.01 dB per a transition at 70 and 80 GHz, respectively. The bandwidth of the proposed transition for reflection at -10 dB is 26 GHz at all test frequencies from 67 to 95 GHz. Compared to the state-of-the-art results, improvement of 8.3 % is achieved for the operation bandwidth.