• Title/Summary/Keyword: Microfabrication

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Genome Detection Using an DNA Chip Array and Non-labeling DNA (비수식화 바이오칩 및 유전자 검출)

  • Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.402-403
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    • 2006

  • This research aims to develop the multiple channel electrochemical DNA chip using microfabrication technology. At first, we fabricated a high integration type DNA chip array by lithography technology. Several probe DNAs consisting of thiol group at their 5-end were immobilized on the gold electrodes. Then target DNAs were hybridized and reacted. Cyclic voltammetry showed a difference between target DNA and control DNA in the anodic peak current values. Therefore, it is able to detect a plural genes electrochemically after immobilization of a plural probe DNA and hybridization of non-labeling target DNA on the electrodes simultaneously. It suggested that this DNA chip could recognize the sequence specific genes.

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Deep X-ray Mask with Integrated Micro-Actuator for 3D Microfabrication via LIGA Process (3차원 LIGA 미세구조물 제작을 위한 마이크로 액추에이터 내장형 X-선 마스크)

  • Lee, Kwang-Cheol;Lee, Seung-S.
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.10
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    • pp.2187-2193
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    • 2002

  • We present a novel method for 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a micro-actuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify the absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose contour are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator (SOI) wafer. 1mm $\times$ 1 mm, 20 $\mu$m thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspension beams and is driven by the comb electrodes. A 10 $\mu$m thick, 50 $\mu$m line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and amplitude are around 3.6 kHz and 20 $\mu$m, respectively, for a do bias of 100 V and an ac bias of 20 $V_{p-p}$ (peak-peak). Fabricated PMMA microstructure shows 15.4 $\mu$m deep, S-shaped cross section in the case of 1.6 kJ $cm^{-3}$ surface dose and GG development at 35$^{\circ}C$ for 40 minutes.

  • https://doi.org/10.3795/KSME-A.2002.26.10.2187 인용 PDF KSCI