• 동력기계공학회지
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• 제5권2호
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• pp.36-42
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• 2001

This paper deals with finite element analyses of residual stresses causing popping up which are induced in micromachining processes of a microaccelerometer sensors. The paddle of the micro accelerometer sensor is designed symmetric with respect to the direction of the beam. After heating the tunnel gap up to 100 degree and get it through the cooling process and the additional beam up to 80 degree and get it through the cooling process. We learn the thermal internal stresses of each shape and compare the results with each other, after heating the tunnel gap up to 400 degree during the Pt deposition process. Finally we find the optimal shape which is able to minimize the internal stresses of microaccelerometer sensor. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensor by electrostatic force.

• 한국생산제조학회지
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• 제9권5호
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• pp.105-111
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than 200~300${\mu}{\textrm}{m}$ has been realized. Over the past four or five years, numerical modeling of microsensors and microstructures has gradually been developed as a field of microelectromechanical system(MEMS) design process. In this paper, we study some of the micromachining processes of single crystal silicon(SCS) for the microaccelerometer, and their subsequent processes which might affect thermal and mechanical loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for component design of microaccelerometer. Temperature rise sufficiently low at the suspended beams. Instead, larger temperature gradient can be seen at the bottom of paddle part. The center of paddle part becomes about 5~2$0^{\circ}C$ higher than the corner of paddle and suspended beam edges.

• 동력기계공학회지
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• 제3권4호
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• pp.57-62
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• 1999

The microaccelerometer using a tunnelling current effect concept has the potential of high performance, although it requires slightly complex signal-processing circuit for servo-system. The paddle of micro accelerometer is pulled to have the gap width of about 2nm which almost allows the flow tunnelling current. This paper demonstrates at capacitor of microaccelerometer the use of the coupled thermo-electric analysis for voltage, current, heat flux and Joule heating then tunnelling current flows. Two electrodes are applied to the microaccelerometer producing a unform difference of temperature gradient and electric potential between the paddle and the substrate.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2000년도 춘계학술대회 논문집(Proceeding of the KOSME 2000 Spring Annual Meeting)
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• 동력기계공학회지
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• 제5권4호
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• pp.11-17
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• 2001

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.

• 한국공작기계학회논문집
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• 제11권4호
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• pp.12-18
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• 2002

Silicon on insulator(SOI) wafer is used in a variety of microsensor applications in which thermal deformations and other mechanical effects may dominate device Performance. One of major Problems associated with the manufacturing Processes of the microaccelerometer based on the tunneling current concept is thermal deformations and thermal stresses. This paper deals with finite element analysis(FEA) of residual thermal deformations causing popping up, which are induced in micrormaching processes of a microaccelerometer. The reason for this Popping up phenomenon in manufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetching occurs. We want to seek after the real cause of this popping up phenomenon and diminish this by changing manufacturing processes of mic개accelerometer. In microaccelerometer manufacturing process, this paper intend to find thermal deformation change of the temperature distribution by tunnel gap and additional beams. The thermal behaviors analysis intend to use ANSYS V5.5.3.

• Journal of Advanced Marine Engineering and Technology
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• 제25권3호
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• pp.631-635
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• 2001

The major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is the residual stress. This paper deals with finite element analysis of residual stress causing pop up phenomenon which are induced in micromachining processes for a microaccelerometers sensor using silicon on insulator(SOI) wafer. After heating the tunnel gap up to $100^{\circ}C$and get it through cooling process and the additional beam up to $80^{\circ}C$get it through the cooling process. We learn the residual stress of each shape and compare the results with each other, after heating the tunnel gap up to $400^{\circ}Cduring$ the Pt deposition process. The equivalent stresses produced during the heating process of focused ion beam(FIB) cut was also to be about $0.02~0.25Pa/^{\circ}C$and cooling process the gradient of residual stresses of about $8.4\{times}10^2Pa/{\mu}m$ still at cantilever beam and connected part of paddle. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensors.

• 대한기계학회논문집A
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• 제36권7호
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• pp.777-787
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• 2012

본 논문에서는 여러 가지 충격하에서 압저항 고충격 미소가속도계의 과도 출력전압의 계산시 발생하는 방대한 계산 시간 문제를 모드중첩법 및 최소자승법을 이용하여 압저항 미소가속도계의 실시간 출력전압 계산이 가능하도록 효율적인 출력전압 과도해석 방법을 제안한다. 우선 정적 압저항-구조 해석을 통하여 미소가속도계의 변위와 출력전압을 계산하고 출력전압을 특정 위치의 변위에 관한 2차 다항식으로 근사화하여 그 회귀계수를 최소자승법을 통하여 결정한다. 이후에 모드중첩법을 통하여 여러 방향의 고충격하에서 미소가속도계의 과도 변위응답을 계산하고, 이 변위응답을 변위로 표현되는 출력전압 근사식에 대입하여 과도 출력전압을 예측한다. 100,000 G 고충격파, 사인파, 계단파 및 사각파 등의 여러 가지 고충격 입력에 대한 압저항 미소가속도계의 수치예제를 통하여 제안한 방법의 정확성 및 효율성을 검증하였다.

• 한국군사과학기술학회지
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• 제14권1호
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• pp.132-138
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• 2011

A micromachined silicon accelerometer capable of surviving and detecting very high accelerations(up to 200,000 times the gravitational acceleration) is necessary for a high impact accelerometer for earth-penetration weapons applications. We adopted as a reference model a piezoresistive type silicon micromachined high-shock accelerometer with a bonded hinge structure and performed structural analyses such as stress, modal, and transient dynamic responses and sensor sensitivity simulation for the selected device using piezoresistive-structural coupled-field analysis. In addition, structural optimization was introduced to improve the performances of the accelerometer against the initial design of the reference model. The design objective here was to maximize the sensor sensitivity subject to a set of design constraints on the impact endurance of the structure, dynamic characteristics, the fundamental frequency and the transverse sensitivities by changing the dimensions of the width, sensing beams, and hinges which have significant effects on the performances. Through the optimization, we could increase the sensor sensitivity by more than 70% from the initial value of $0.267{\mu}V/G$ satisfying all the imposed design constraints. The suggested simulation and optimization have been proved very successful to design high impact microaccelerometers and therefore can be easily applied to develop and improve other piezoresistive type sensors and actuators.