• Journal of Surface Science and Engineering
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• v.18 no.3
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• pp.105-115
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• 1985

Lead-tin-copper ternary alloy electrodeposition is conducted onto the inner bore surface of plain bearings as an overlay in order to investigate the effect of slot width, current density and fluoboric acid concentration on the uniformity of overlay. The thickness of overlay is analyzed by means of current distribution resulting from the overvoltage of plating bath and the apparent distance between cathode and anode. The result demonstrate that the uniformity of overlay is remarkably dependent of the slot size and current density, but has little bearing on the fluoboric acid concentration over 100g/L. This present study indicates that uniform overlay is obtainable within the tolerable thickness of ${\pm}2{\mu}m$ by using the slot width of 22mm. The surface morphology examination also shows the important role of concentration polarization of the micro-uniformity of overlay. The micro-uniformity has improved at the low concentration polarization which resulted from operating at the low current density and high fluoboric acid concentration. The surface morphology of deposits exhibits the vivid pyramid crystalline in the plating condition of low concentration polarizatio and all deposits have columnar structure parallel to the applied electric field regardless of the electroplating condition used.

• Journal of Surface Science and Engineering
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• v.28 no.5
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• pp.267-275
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• 1995

Electron beam can provide convenient way to heat the substrate during Hollow Cathode Discharge (HCD) ion plating of Ti(C, N)films. Densification of columnar structrue is enhanced by longer duration of electron beam heating(EBH). While strong(111) texture is identified always to be formed, the amount of (200) oriented grains which coherently interfaced with carbide particles of the substrate increased with heating(EBH). In turns, these crystallogaphical change lead to the increase of micro hardness and adhesion of coating. Adhesion of Ti(C, N) films increased more dramatically in case of ASP30 substrate of which carbide particles dispersed more finely than M42. Therefore, it could be concluded that both the density of film and interfacial structure can affect the adhesion property. Overheating of substrate could be resulted in low adhesion resistance due to high residual stress developed in the film.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1189-1192
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• 2006

We have demonstrated the novel technique for spacing two flexible substrates in stable by using rigid pillar spacer array and micro-contact printing assembling technique. Specially designed columnar structure generates self-collected adhesive polymer feature results in a good adhesion and a high mechanical stability to the external bending deformations.

• Journal of Surface Science and Engineering
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• v.25 no.2
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• pp.90-96
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• 1992

Thed effects of sputter gas pressure and substrate surface micro-roughness on the microstructure and surface topography have been investigated in the Cu thin films sputter deposited onto polyimide substrates. The surface roughness of polyimide was controlled by oxygen rf plasma treatment. In the Cu film deposited at the pressure of 5 mtorr, the surface is smooth and the columnar structure is not visible regardless of polyimide surface more open boundaries. The polyimide surface roughness enhances these effects, These phenomena can be explained in therm of atomic shadowing effect.

• Journal of Korea Foundry Society
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• v.6 no.2
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• pp.116-121
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• 1986

The effects of pressure during solidification on macro-and micro-structures have been studied in pure aluminium and Al-Si alloys. The application of pressure during solidifcation accelerated both equiaxed and columnar dendritic-growth due to stimulating of equiaxed survival and faster preferential growth of primary dendrites against the parallel direction of heat flow. Burden-Hunt model was modified to express the significant changes of CET behaviours under pressure. A further point to be noted was that greatly fine eutectic silicon flakes ($0.5\;{\times}\;13{\mu}m$) with the decrease of halo layers ($7{\mu}m$) of aluminium riched phases in the periphery of primary silicon particles were observed when pressure was applied during solidification.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Journal of the Korean Magnetics Society
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• v.21 no.5
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• pp.185-192
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• 2011

The technique of producing thin film plays a crucial role in modern science and technology as well as in industrial purposes. Numerous efforts have been made to get high quality thin film through surface treatment of materials. PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition) are two of the most popular deposition techniques used in both scientific study and industrial use. It is well known that the film deposited by PVD and CVD commonly possesses a columnar microstructure which affects many film properties. In recent years, various types of deposition sources which feature high material uses and excellent film properties have been developed. Electromagnetic levitation source appeared as an alternative deposition source to realize high deposition rate for industrial use. Complex film structures such as nano multilayer and multi-components have been prepared to achieve better film properties. Glancing angle deposition (GLAD) has also been developed as a technique to engineer the columnar structure of thin films on the micro- and nanoscale. In this paper, the trends and major issues of thin film technology based on PVD and CVD have been discussed together with the prospect of thin film technology.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.189-195
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• 1999

We have studied the vortex dynamics in YBa$_2Cu_3O_7$ single crystals with columnar defects using micro Hall-probe array. The Hall-probe array technique allowed a simultaneous measurement of the time and spatial dependence of the vortex density so that more detailed information on flux dynamics could be obtained. We found that field profiles inside sample were similar to the Bean's critical state model from the magnetic hysteresis measurement. Normalized relaxation rates were maximum near the center and decreased toward the edge if applied field H$_{app}$ is greater than the penetration field H. But applied magnetic field H$_{app}$ is less than H, relaxation rates were minimum near the center and increased toward edge. We found that glassy exponent ${\mu}$ has the value of ${\sim}$ 1 whose corresponding vortex motion is half-loop excitation. However, single vortex creep, ${\mu}$ ${\sim}$ 1/7, was also found at 30 K and H$_{app}$ ${\cong}$ H'. Calculation of activation energy, U, was possible from direct analysis of the local relaxation data using the basic diffusion equation. From these results, we found that U increases logarithmically with time and U around center was lower than that at the edge.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.348-353
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• 1996

Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1083-1087
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• 1999

Microstructures and the gas-sensing characteristics of the $\textrm{SnO}_2$ thin films were studied, which were deposited at various conditions (rf power, sample temperature, $\textrm{O}_2$/Ar ratio) by the rf magnetron sputtering. As a result, six typical microstructures were derived, such as amorphous(A), amorphous mixed with polycrystalline grains (A+P), polycrystalline with random crystalographic orientation (P), fine columnar (FC), coarse columnar (CC) and Zone T (T) with dense fiberous structure. Typically, A, A+ P, and P structures were formed when no $\textrm{O}_2$ was added to the sputter gas, whereas FC, CC, and T structures were obtained when $\textrm{O}_2$ was added. The A structure formed at low rf power and low temperature, the A+P at high rf power and low temperature, and the P at high rf power and high temperature. The FC structure was obtained at low rf power and low temperature. the CC at low rf power and high temperature, and the T at high rf power and low temperature. Results of the gas-sensing test of the sensor chips fabricated from the typical films indicated that the fine columnar microstructure shows the highest sensitivity both at $300^{\circ}C$ and $400^{\circ}C$. It was proposed that this is due to the high specific surface area of the micro-columns.