• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.101-102
• /
• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the de bias voltage of -10V showed lower discharge voltage, lower erosion rate by ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam evaporation.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.197-202
• /
• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.1265-1268
• /
• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2002.06a
• /
• pp.223-223
• /
• 2002

• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.12a
• /
• pp.81-81
• /
• 2011

• The Korean Journal of Ceramics
• /
• v.3 no.3
• /
• pp.191-194
• /
• 1997

Epitaxial Pb(Zr, Ti)O3(PZT) thin films were prepared on MgO(100) substrates by dipping-pyrolysis (DP) process using metal naphthenates as starting materials, and effects of pyrolysis and final heat-treatment conditions on the film's orientation were investigated. Solid-state epitaxial growth of PZT proceeds at lower temperature around 650℃ from the precursor pyrolyzed at 350 and 500℃. The in-plane alignment of the PZT films depends not only on the final heat-treatment temperature but on the pyrolysis conditions; the films, pyrolyzed at a higher temperature for a short time, i.e., at 500℃ for 10 min, exhibited stronger orientation after the same final heat treatment at 650°∼750℃. The PZT films with the strongest orientation were prepared by pyrolysis under the above conditions followed by final heat treatment at 750℃.

• The Korean Journal of Ceramics
• /
• v.4 no.3
• /
• pp.231-234
• /
• 1998

LaNiO3 thin films were fabricated on various substrates by spin-coating technique using metal naphthenates as starting materials. Highly-oriented LaNiO3 films with smooth and crack-free surfaces were grown on SrTiO3 (100) and LaAlO3(100) substrates, while films on MgO(100) and Si(100) substrates showed random orientation. In this study, we concluded that lattice-mismatches between LaNiO3 films and substrates used affect film's properties.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.67-70
• /
• 1999

We have fabricated YBa$_2Cu_3O_{7-x}$ thin films by cylindrical hollow cathode sputtering. For 2 inch diameter of MgO (100) substrate, we obtained the zero resistance temperature in the range from 83 K to 86 K and thickness uniformity better than 5 % over the whole area. Also, the average deposition rate was 100nm/h which is higher than 10 times compare to conventional off-axis sputtering method. These results indicate that cylindrical hollow cathode sputtering seems to have unique capabilities for high rate and homogeneous deposition of large area thin film.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.24 no.2
• /
• pp.106-112
• /
• 2010

In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.312-312
• /
• 2012

Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.