• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.120.1-120.1
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.129-132
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• 2003

Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition (MOCVD) technique using single liquid source for the application of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (100) single crystal MgO substrate was used for searching deposition condition. Bi-axially oriented CeO$_2$ and NiO films were fabricated on {100}〈001〉 Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660~80$0^{\circ}C$) and oxygen flow rates (100~500 sccm) were changed to find the optimum deposition condition. The best (100) oriented YSZ film on MgO was obtained at 74$0^{\circ}C$ and $O_2$ flow rate of 300 sccm. For YSZ buffer layer with this deposition condition on CeO$_2$/Ni template, full width half maximum (FWHM) values of the in-plane and out-of-plane alignments were 10.6$^{\circ}$ and 9.8$^{\circ}$, respectively. The SEM image of YSZ film on CeO$_2$/Ni showed surface morphologies without microcrack.k.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.359-361
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• 2003

Nano-porous alumina was investigated as a protecting layer in an AC Plasma Display Panel. A 2 ${\mu}m$ thick nano-porous $Al_2O_3$ layer inserted with MgO was formed on the dielectric layer instead of the conventional 500 nm-thick MgO thin film. Both nano-porous $Al_2O_3$layer and inserted MgO were prepared by wet process. The luminance and luminous efficiency of 3-inch test panel adopting nano-porous $Al_2O_3$ was higher than that of the conventional PDP.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1732-1734
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• 2003

An MgO thin film sputtering system for the PDP (Plasma Display Panel) applications has been developed. This system was manufactured with a vertical In-Line type of 42 inch, which has the length of 520 mm and the width of 900 mm. A reactive magnetron discharge for this sputtering was generated using an unipolar pulsed power supply which has functions of constant voltage (Max. 500 V) and current (Max. 15 A) control, frequency of $10{\sim}100$ kHz and duty ratio of $10{\sim}60$ %. The experiment was conducted under various conditions : $3{\sim}10$ mTorr of pressure, the ratio of $O_2$/Ar = $0.1{\sim}0.5$, 50 % of duty and power of $0.5{\sim}1.7$ kW. From the experiment, the deposition rate of a static state and a moving state were measured to be about 45 nm/min and 6 nm m/min at the distance of 50 mm between the target and the substrate, respectively.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.712-717
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• 2014

Glass ceramic has a high mechanical strength and low sintering temperature. So, it can be used as a thick film substrate or a high strength insulator. A series of glass ceramic samples based on MgO-$Al_2O_3-SiO_2-ZrO_2$ (MASZ) were prepared by melting at $1,600^{\circ}C$, roll-quenching and heat treatment at various temperatures from $900^{\circ}C$ to $1,400^{\circ}C$. Dependent on the heat treatment temperature used, glass ceramics with different crystal phases were obtained. Their nucleation behavior, microstructure and mechanical properties were investigated with differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Vicker's hardness testing machine. With increasing the heat treatment temperature of MASZ samples, their hardness and toughness initially increase and then reach the maximum points at $1,300^{\circ}C$, and begin to decrease at above this temperature, which is likely to be due to the softening of glass ceramics. As the content of $ZrO_2$ in MAS glass ceramics increases from 7.0 wt.% to 13 wt.%, Vicker's hardness and fracture toughness increase from $853Kg/mm^2$ to $878Kg/mm^2$ and $1.6MPa{\cdot}m^{1/2}$ to $2.4MPa{\cdot}m^{1/2}$ respectively, which seems to be related with the nucleation of elongated phases like fiber.

• 한국재료학회지
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• 제11권3호
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• pp.197-202
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• 2001

교류구동형 플라즈마 표시소자의 보호막으로 사용되는 MgO의 특성향상을 위하여 기존의 MgO에 양이온이 등전적으로 치환될 수 있는 ZnO를 소량 첨가하여 고주파 마그네트론 스퍼터링 방법으로 $Mg_{1-x}$Z $n_{x}$O박막을 성장시키고 박막의 전기적, 광학적 특성을 조사하였다. ZnO농도가 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 PDP 테스트 판넬을 제작하고 ZnO의 첨가가 소자의 방전전압과 메모리 이득에 미치는 영향을 살펴보았다. ZnO농도가 0at%, 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막의 광투과율은 ZnO 첨가에 따라 변화를 보이지 않으나 유전상수는 다소 증가하는 경향을 보였다. ZnO의 농도가 0.5 at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 PDP 소자의 방전개시전압과 방전유지 전압이 MgO 박막을 보호막으로 갖는 소자에 비해 20V까지 낮아졌고, 결과적으로 메모리계수는 다소 증가하였다. ZnO농도가 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 소자에서 ZHO의 첨가에 비례하여 방전세기 (플라즈마 밀도)가 증가하였다.도)가 증가하였다.도)가 증가하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권3호
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• pp.209-214
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• 1999

This paper deals with the effects of activation process of MgO thin film on the dielectric characteristics of surface discharge type AC PDP. The discharge voltage decreased with increase in the MgO activation time and temperature until $400^{\circ}C$ under the condition of clean high vacuum. However, for the sample activated above $430^{\circ}C$ the discharge voltage increased. These results may be explained by the MgO morphology change and surface cleaning in the process of activation.

• 조명전기설비학회논문지
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• 제24권2호
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• pp.106-112
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• 2010

플라즈마 디스플레이 패널(Plasma Hsplay Panel :PDP)이 다른 평판 디스플레이 분야(Liquid Crystal Displays(LCDs) and organic light emitting diodes(OLEDs)등)와 경쟁에서 이기기 위해서는 제품의 고화질화, 저소비전력와 고속구동 등의 성능향상이 필요하다. 본 논문에서는 PDP의 성능향상을 위하여 유전체 보호층으로 쓰이는 MgO 박막에 Fe를 미량 첨가한 박막을 증착하고, 그 특성에 대하여 연구하였다. e-beam 증착법으로 증착된 Fe 도핑 된 MgO 박막의 표면특성과 전기광학적 특성을 4인치 테스트 패널을 제작하여 연구하였다. Fe가 도핑된 MgO 박막을 가지는 PDP는 Fe가 도핑되지 않은 PDP에 비해 낮은 방전전압 특성을 나타내었으며, 이는 박막에서 측정된 2차전자방출계수의 실험결과와 잘 일치되었다. 증착된 박막의 결정성과 표면 거칠기는 XRD 와 AFM 측정방법을 통하여 결정되었다. 또한, Fe가 도핑된 PDP는 고속구동을 위한 향상된 어드레스 방전 늦음의 특성을 나타내었다.