• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.208-217
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• 2014

$La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2-x}Zn_xO_{2.8}$(LSGMZ, X=0-0.05) was prepared using a solid state reaction method. Two secondary phases ($LaSrGaO_4$ and $LaSrGa_3O_7$) of powders were identified by X-ray diffraction analysis. The relative amount of these secondary phases depended on the calcination conditions (temperature and time) and Zn content. The sintering density of LSGMZ was enhanced by increasing the Zn content and calcination temperature at the low sintering temperatures ($1250-1300^{\circ}C$). The relationship between the sintering density of LSGMZ and the synthesis conditions was discussed considering the phase analysis results.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.653-656
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• 1999

Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.127-134
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• 2016

A series of Ce-doped ZnO (Ce/ZnO) nanostructures were fabricated using the co-precipitation method, then a simply nontoxic hydrothermal approach was proposed for preparation of reduced graphene oxide (rGO)-Ce/ZnO composites. The synthesized composites were investigated by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), photoluminescence spectroscopy (PL), electrochemical impedance spectroscopy (EIS), UV-vis diffuse reflectance spectroscopy (DRS) techniques and Raman pattern. The as-synthesized rGO-Ce/ZnO composites showed high photodecomposition efficiency in comparison with the rGO-ZnO, Ce/ZnO, pure ZnO under UV, visible-light and sunlight irradiation. The degradation of methylene blue (MB) (10 mg/L, 100ml) by 95.8% within 60 min by using rGO-2 (10 mg) under sunlight irradiation was observed. The repeated use of the rGO-2 was investigated, and the results showed almost no decay in the catalytic activity.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.637-641
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• 2007

The total energy and strength of Mg alloy doped with Al, Ca and Zn, were calculated using the density functional theory. The calculations was performed by two programs; the discrete variational $X{\alpha}\;(DV-X{\alpha})$ method, which is a sort of molecular orbital full potential method; Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The fundamental mixed orbital structure in each energy level near the Fermi level was investigated with simple model using $DV-X{\alpha}$. The optimized crystal structures calculated by VASP were compared to the measured structure. The density of state and the energy levels of dopant elements was discussed in association with properties. When the lattice parameter obtained from this study was compared, it was slightly different from the theoretical value but it was similar to Mk, and we obtained the reliability of data. A parameter Mk obtained by the $DV-X{\alpha}$ method was proportional to electronegativity and inversely proportional to ionic radii. We can predict the mechanical properties because $\Delta{\overline{Mk}}$is proportional to hardness.

• Current Optics and Photonics
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• v.3 no.6
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• pp.577-582
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• 2019

We report on a continuous-wave (cw) optical parametric oscillator (OPO) optimized for mid-infrared emission above 5.0 ㎛. The OPO is based on a magnesium-oxide-doped periodically poled LiNbO₃(MgO:PPLN) crystal with a fan-out grating design. A linear two-mirror cavity resonating both at the pump and signal wavelengths is stabilized to the pump laser by using the modified Pound-Drever-Hall (PDH) method. The idler wavelength is continuously tunable from 4.7 ㎛ up to 5.3 ㎛ by varying the poling period of the fan-out grating crystal. Pumped by a diode-pumped solid state (DPSS) laser with a power of 1.1 W at 1064 nm, the maximum idler output power is measured to be 5.3 mW at 4.8 ㎛. The output power above 5.0 ㎛ is reduced to the hundreds of ㎼ level due to increased absorption in the crystal, but is stable and strong enough to be measured with a conventional detector.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.274-277
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• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• Environmental Engineering Research
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• v.19 no.3
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• pp.205-214
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• 2014

Petroleum a vital commodity affecting every aspect of 21st century. Toxicity and adverse effects of sulphur as catalyst in petroleum products is of great concern required development of techniques for desulphurization in compliance with the International standards. Installation of desulphurizing units costs over $200 million per unit placing economic burden on developing countries like Pakistan. Present study analysis of commercial fuels (station petrol and jet fuel JP8) on gas chromatography-mass spectrometry (GC-MS) identified sulphur concentration of 19.94 mg/L and 21.75 mg/L, respectively. This scenario urged the researcher to attempt synthesis of material that is likely to offer good adsorption capacity for sulphur. Following protocol of sol-gel method, transition metals (Ni, Cu, Zn) solution is gelated with tetraethoxysilane (TEOS; silica precursor) using glycerol. Fourier transform infrared spectroscopy (FTIR) spectra revealed bonding of Zn-O, Cu-O, and Ni-O by stretching vibrations at $468cm^{-1}$, $617cm^{-1}$, and $468cm^{-1}$, respectively. Thiophene and Benzothiophene mixed in n-heptane and benzene (4:1) for preparation of Model Fuels I and II, respectively. Each of silica based metal was applied as adsorbent in batch mode to assess the removal efficiency. Results demonstrated optimal desulphurization of more than 90% following efficacy order as Si-Ni > Si-Zn > Si-Cu based adsorbents. Proposed multilayered (Freundlich) adsorption mechanism follows ${\pi}$-complexation with pseudo secnd order kinetics.

• Current Applied Physics
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• v.18 no.11
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• pp.1225-1229
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• 2018

In this paper, we investigated the electronic structures and defect states of $SrLaMgTaO_6$ (SLMTO) double perovskite structures by using resonant inelastic x-ray scattering. Recently, $Eu^{3+}$ doped SLMTO red phosphors have been vigorously investigated due to their higher red emission efficiency compared to commercial white light emitting diodes (W-LED). However, a comprehensive understanding on the electronic structures and defect states of host SLMTO compounds, which are specifically related to the W-LED and photoluminescence (PL), is far from complete. Here, we found that the PL spectra of SLMTO powder compounds sintered at a higher temperature, $1400^{\circ}C$, were weaker in the blue emission regions (at around 400 nm) and became enhanced in near infrared (NIR) regions compared to those sintered at $1200^{\circ}C$. To elucidate the difference of the PL spectra, we performed resonant inelastic x-ray spectroscopy (RIXS) at Ta L-edge. Our RIXS result implies that the microscopic origin of different PL spectra is not relevant to the Ta-related defects and oxygen vacancies.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.156-159
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• 2007

The red emission properties of $Mn^{4+}$ doped $SrAl_{12}O_{19}$ prepared by the solid-state reaction was investigated, in order to verify its potential to act as the red emitting phosphor of white LEDs. The emission spectrum exhibits a narrow band between $600{\sim}700 nm $ with four sharp peaks occurring at about 643, 656, 666, 671 nm due to the $^2E\to^4A_2$ transition of $Mn^{4+}$. The excitation spectrum exhibits a broad band between $200{\sim}500 nm$ with three peaks occurring at about 338, 398 and 468 nm, respectively. Moreover, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ with or without $CaF_2$ and MgO fluxes measured at excitation source 390 nm. The relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67mol% MgO was approximately 30% higher than that of the base composition sample. Strontium hexa-aluminate measured at room temperature as a function of the substituted Mg concentration. MgO was added to replace part of the $Al_2O_3$. Also, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67 mol% MgO and 0.67 mol% $CaF_2$ was approximately about 48% higher than that of the base composition $SrAl_{12}O_{19}:Mn^{4+}$.