• 제목/요약/키워드: Mg-doped

검색결과 343건 처리시간 0.028초

그래핀 나노플레이트에 의한 $MgB_2$의 임계전류밀도 향상 (Improved Critical current Density in $MgB_2$ by Graphene nano-platelets)

  • ;정국채;장세훈;김정호
    • Progress in Superconductivity
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    • 제14권1호
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    • pp.34-38
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    • 2012
  • The effect of graphene inclusion in the ex-situ $MgB_2$ was analyzed with the help of resistivity behavior and critical current density studies. Amount of graphene was systematically varied from 0% for pristine sample to 3% by the weight of $MgB_2$. Graphene that is considered as a good source of carbon was found to be intact without any significant carbon doping in $MgB_2$ structure as reveled by XRD measurements. There was no signature of graphene inclusion as far as the superconducting transition is concerned which remained same at 39 K for all the samples. The transition width being sensitive to defect doping remained more or less about 2 K for all the samples showing no variation due to doping. Although there was no change in the superconducting transition or transition width, the graphene doped sample showed noticeable decrease in the overall resistivity behavior with respect to decrease in temperature. The graphene inclusion acted as effective pinning centers which have enhanced the upper critical field of these samples.

Enhanced photocatalytic oxidation of humic acids using Fe3+-Zn2+ co-doped TiO2: The effects of ions in aqueous solutions

  • Yuan, Rongfang;Liu, Dan;Wang, Shaona;Zhou, Beihai;Ma, Fangshu
    • Environmental Engineering Research
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    • 제23권2호
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    • pp.181-188
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    • 2018
  • Photocatalytic oxidation in the presence of Fe-doped, Zn-doped or Fe-Zn co-doped $TiO_2$ was used to effectively decompose humic acids (HAs) in water. The highest HAs removal efficiency (65.7%) was achieved in the presence of $500^{\circ}C$ calcined 0.0010% Fe-Zn co-doped $TiO_2$ with the Fe:Zn ratio of 3:2. The initial solution pH value, inorganic cations and anions also affected the catalyst photocatalytic ability. The HAs removal for the initial pH of 2 was the highest, and for the pH of 6 was the lowest. The photocatalytic oxidation of HAs was enhanced with the increase of the $Ca^{2+}$ or $Mg^{2+}$ concentration, and reduced when concentrations of some anions increased. The inhibition order of the anions on $TiO_2$ photocatalytic activities was $CO{_3}^{2-}$ > $HCO_3{^-}$ > $Cl^-$, but a slightly promotion was achieved when $SO{_4}^{2-}$ was added. Total organic carbon (TOC) removal was used to evaluate the actual HAs mineralization degree caused by the $500^{\circ}C$ calcined 0.0010% Fe-Zn (3:2) co-doped $TiO_2$. For tap water added with HAs, the $UV_{254}$ and TOC removal rates were 57.2% and 49.9%, respectively. The $UV_{254}$ removal efficiency was higher than that of TOC because of the generation of intermediates that could significantly reduce the $UV_{254}$, but not the TOC.

암모니아 역류형태의 반응로를 이용한 GaN 반도체 박막의 성장 (Crystal growth of GaN semiconductor films by counter-flow metal-organic chemical vapor deposition)

  • 김근주;황영훈
    • 한국결정성장학회지
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    • 제9권6호
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    • pp.574-579
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    • 1999
  • 암모니아가스를 역류시키는 수평식 유기금속 화학기상증착장치를 제작하였으며, 유체흐름에 관한 레이놀즈 수 및 열대류에 관한 레일리 수가 각각 4.5와 215.8이 되도록 하여 GaN 박막을 성장하였다. 이러한 특성변수에서 박막을 성장할 경우 비교적 양호한 박막의 결정특성, 전기적 특성 및 광학적 특성을 갖게 함을 확인하였다. 결정 내의 전위밀도는 $2.6{\times}10^8/\textrm {cm}^2$ 정도이었고, Si으로 도핑된 n-GaN 박막의 전자에 의한 운반자 농도와 이동도는 각각 $10^{17}$~$10^{18}/{\textrm}{cm}^3$ 과 200~400$\textrm{cm}^2$/V.sec의 범위를 갖으며 Mg을 도핑하여 후속열처리로 활성화시킨 p-GaN 박막은 정공에 의한 운반자 농도가 $8\times 10^{17}/{\textrm}{cm}^3$ 정도임을 확인하였다.

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RF 마그네트론 스퍼터를 이용하여 제작한 MIZO 박막의 특성에 미치는 기판 온도의 영향 (Characteristics of the Mg and In co-doped ZnO Thin Films with Various Substrate Temperatures)

  • 전기석;지홍섭;임상우;정채환
    • Current Photovoltaic Research
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    • 제4권4호
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    • pp.150-154
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    • 2016
  • Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.

Cathodoluminescence Properties of Novel $Mg_2SnO_4$:Mn Phosphor under Low-Voltage Electron Excitation

  • Kim, Kyung-Nam;Jung, Ha-Kyun;Park, Hee-Dong;Kim, Do-Jin
    • Journal of Information Display
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    • 제2권3호
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    • pp.13-17
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    • 2001
  • The manganese-doped magnesium tin oxide with spinel structure was selected as a green phosphor for FED application and was synthesized by the solid state reaction. Its luminescence properties were investigated under low-voltage electron excitation. The $Mg_2SnO_4$:Mn phosphor showed green emission with the spectrum centered at 500 nm due to energy transfer from $^4T_1$ to $^6A_1$ of $Mn^{2+}$ ion. Optimum Mn concentration was 0.6 mole % and the decay time was shorter than 10 ms.

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Studies on characteristics of $Eu^{2+}$-doped $Sr_3MgSi_2O_8$ phosphors synthesized by solid state reaction method

  • 장우석;최병현;지미정;안용태;이준호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.173-173
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    • 2009
  • 높은 휘도를 갖는 $Eu^{2+}$가 도핑된 $Sr_3MgSi_2O_8$ 형광체는 고상반응법을 사용하여 합성하였다. 몰 비에 따른 조성을 정밀전자저울을 사용 무게를 칭량하여 에탄올을 용매로 하여 혼합, 건조 후 하소 온도는 $1000^{\circ}C$, 합성 온도는 $1200^{\circ}C$에서 $1400^{\circ}C$까지 $H_2$ 5% Ar 95% 환원분위기에서 소성 온도 별 결정상을 관찰하였고, 그 형태에 따라서는 Powder상태일 때와 Powder를 Press하여 bulk상태로써의 결정상의 변화를 연구하였다. 그 결과 분말상태와 성형을 가한 pellet의 두 가지 형태로 합성하여 비교한 결과 성형공정을 거친 시료의 경우가 분말 상태일 때 보다 좋지 못한 결정상이 관찰되었다. $Sr_3MgSi_2O_8$의 미세구조는 SEM으로 관찰하였다.

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Czochralski법에 의해 육성된 lithium niobate 단결정의 결함구조 (Defect structure of lithium niobate single crystals grown by the Czochralski method)

  • 김기현;고정민;심광보;오근호
    • 한국결정성장학회지
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    • 제6권4호
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    • pp.620-626
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    • 1996
  • 자체 제작한 고주파 유도 가열 Czochralski 장치를 이용하여 조화용융조성(congruently melting composition)의 undoped 및 MgO.doped 단결정을 육성하였다. 최적육성조건을 확립하였으며, 보상가열전압조정방식을 이용하여 약 ${\pm}5\;%$ 이내의 범위로 직경제어하는데 성공하였다. 또한, 첨가된 $Mg^{2+}$ 이온이 ferroelectric domain 형성에 미치는 영향을 전자현미경(SEM)등으로 분석하였다.

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$MgAl_{2}O_{4}$ 기판위에 GaN의 HVPE 성장조건에 따른 광루미네센스 특성 (Photoluminescence Properties of GaN on $MgAl_{2}O_{4}$ Substrate with HVPE Growth Conditions)

  • 김선태;이영주
    • 한국재료학회지
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    • 제8권8호
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    • pp.667-671
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    • 1998
  • 이 연구에서는 HVPE법으로 $MgAl_{2}O_{4}$ 기판 위에 GaN를 서로 다른 조건에서 성장시키고, 성장된 GaN의 PL특성을 조사하였다. $MgAl_{2}O_{4}$ 기판위에 성장된 GaN는 $MgAl_{2}O_{4}$ 기판으로부터 Mg의 out-diffusion에 의한 auto-doping 효과에 의하여 불순물이 첨가된 GaN의 PL 성질을 나타내었다. Mg과 관련된 발광 강도는 GaN의 성장온도가 증가함에 따라 GaN의 표면에서 Mg의 재증발에 의하여 감소하였으며, GaN의 두께에 대하여 지수 함수적으로 감소하였다. 두 개의 무한 고체 사이에서 농도 차에 의한 확산현상을 고려하여 구한 GaN 내에서 Mg 원자의 확산계수는 D= 2$\times$$lO^{-10}\textrm{cm}^2/sec. 이었다.

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Effect of the SBA-15 template and KOH activation method on CO2 adsorption by N-doped polypyrrole-based porous carbons

  • Yuan, Hui;Jin, Biao;Meng, Long-Yue
    • Carbon letters
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    • 제28권
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    • pp.116-120
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    • 2018
  • Nitrogen-doped carbons have attracted much attention due to their novel application in relation to gas storage. In this study, nitrogen-doped porous carbons were synthesized using SBA-15 as a template, polypyrrole as the carbon and nitrogen precursor, and KOH as an activating agent. The effect of the activation temperature ($600-850^{\circ}C$) on the $CO_2$ adsorption capacity of the obtained porous carbons was studied. Characterization of the resulting carbons showed that they were micro-/meso-porous carbon materials with a well-developed pore structure that varied with the activation temperature. The highest surface area of $1488m^2g^{-1}$ was achieved at an activation temperature of $800^{\circ}C$ (AC-800). The nitrogen content of the activated carbon decreased from 4.74 to 1.39 wt% with an increase in the activation temperature from 600 to $850^{\circ}C$. This shows that nitrogen is oxidized and more easily removed than carbon during the activation process, which indicates that C-N bonds are more easily ruptured at higher temperatures. Furthermore, $CO_2$ adsorption isotherms showed that AC-800 exhibited the best $CO_2$ adsorption capacity of $110mg\;g^{-1}$ at 298 K and 1 bar.