• Journal of Korea Foundry Society
• /
• v.33 no.3
• /
• pp.113-121
• /
• 2013

The effects of Zn and Mg amounts on the solidification characteristics, microstructure, thermal conductivity and tensile strength of Al-Zn-Mg-Fe alloys were investigated for the development of high thermal conductivity aluminium alloys for die casting. Zn and Mg amounts in Al-Zn-Mg-Fe alloys had a little effect on the liquidus / solidus temperature, the latent heat for solidification and the fluidity of Al-Zn-Mg-Fe alloys. Thermo-physical modelling of Al-Zn-Mg-Fe alloys by JMatPro program showed $MgZn_2$, AlCuMgZn and Al3Fe phases on microstructure of their alloys. Increase of Zn and Mg amounts in Al-Zn-Mg-Fe alloys resulted in gradual reduction of the thermal conductivity of their alloys. Increase of Mg amounts in Al-2%Zn-Mg-Fe alloys had little effect on the tensile strength of their alloys, but increase of Mg amounts in Al-4%Zn-Mg-Fe alloys resulted in steep increase of the tensile strength of their alloys.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.11a
• /
• pp.15-15
• /
• 2012

Mg(1-4)Zn 이원계 압출재 및 Mg5Sn(1-4)Zn 삼원계 압출재의 부식거동을 3.5 % NaCl 용액에서 다양한 전기화학기법을 이용하여 평가하였다. 이원계 합금에 대한 연구결과, Zn 함량 증가에 따라 Mg 모재의 부동태화가 촉진되었고 동시에 수소발생속도가 증가하였으며 그 결과 부식전위의 상승이 관찰되었다. 그러나 Zn 함량 증가에 따른 부동태화 효과보다 수소발생 증가 효과가 우세하므로 결과적으로 Zn 함량 증가에 따라 부식속도는 증가하였다. Mg5Sn(1-4)Zn 삼원계 합금에 대한 부식시험 결과, Mg5Sn2Zn 합금이 가장 낮은 부식속도 및 우수한 부동태화를 나타내었으며 이는 합금원소 Sn의 수소발생속도 감소효과와 합금원소 Zn의 부동태화 효과의 상호작용에 의한 것으로 사료된다.

• Korean Journal of Materials Research
• /
• v.7 no.11
• /
• pp.1012-1017
• /
• 1997

Mg-Zn-Ca합금의 잉곳트는 BN을 내벽에 바른 4x$10^{-5}$Torr의 진공의 석영관내에서 제조하였다. Mg-Zn합금계의 입자미세화를 위하여 0.5-5wt.%조성범위의 Ca를 첨가하였다. 제조된 합금을 용체화처리한 후 결정립크기와 경도를 측정하였다. Mg-6wt.%Zn합금의 입자미세화효과는 Ca가 1.5wt%첨가 될 때 최적의 조건이었다. Mg-6wt.% Zn과 Mg-6wt.% Zn-2wt.% Ca및 Mg-6wt.% Zn-1.5wt.% Si합금을 시효처리하여 시효거동을 조사하였다. 입자미세화에 의한 경도증가효과는 Mg-Zn-Ca합금계에서 크게 나타났으며 시효에 의한 경도증가효과는 Mg-Zn-Si합금계에서 크게 나타났다. Mg-6wt.%Zn합금의 부식전류밀도는 0.5wt.% Ca의 조성에서 감소되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.73-73
• /
• 2008

일반적으로 청색 및 자외선 발광다이오드, 레이저 다이오드, UV 감지기 (detector)소자 등의 기술적인 중요성은 ZnO를 기반으로 하는 산화물 반도체와 함께 와이드 밴드갭 반도체 연구가 활발히 진행되고 있다. ZnO의 경우 밴드갭 엔지니어링을 위해 일반적으로 Cd과 Mg을 사용하고 있으며 특히, ZnO에 Mg을 첨가하여 MgZnO 화합물을 첨가할 경우 밴드갭을 3.3eV~7.8eV까지 증가 시킬 수 있고, MgZnO/ZnO 초격자 구조를 이용할 경우 자유 엑시톤 결합에너지를 100meV 이상까지 증가시킬 수 있는 장점을 가지고 있다. 그러나 MgO는 결정구조가 rocksalt 구조를 가지는 입방정 구조이기 때문에 Hexagonal 구조를 가진 ZnO에 첨가될 경우 고용도에 큰 제한을 가지게 된다. 이와 같은 문제점으로 인하여 밴드갭 엔지니어링 기술은 여전히 해결되지 않은 문제점으로 남아 있다. 본 실험에서는 RF 마그네트론 스퍼터링 방법으로 사파이어 기판위에 MgZnO/ZnO 박막을 co-sputtering 시켰다. Targer은 ZnO(99.999%) 와 MgO (99.999%) target을 사용하였고, 스퍼터링 가스는 아르곤과 산소가스를 2:1 비율로 혼합시켜 성장하였다. MgZnO 박막을 성장하기 전 ZnO 층을 ~500 두께로 성장 시켰다. RF-power는 ZnO target을 고정 시키고, MgO targe power를 변화시켜 Mg 농도를 조절 하였다. 실험 결과 MgO target power 가 증가 할수록 반치폭이 증가하고, c-plane을 따라 격자 상수가 감소하는 것을 확인 할 수 있고, UV emission peak intensity가 감소며 단파장쪽으로 blue shift 하고, activation energy 가 증가하는 것을 관찰 할 수 있었다.

• Journal of Korea Foundry Society
• /
• v.30 no.4
• /
• pp.137-141
• /
• 2010

The effects of Zn amounts on the castability and tensile properties of Al-Zn-Mg-Cu alloys were investigated for development of high strength die casting aluminium alloys. Al-Zn-Mg-Cu alloys with 3.5% Zn showed high cast cracking tendency and poor mold filling behaviour. Al-Zn-Mg-Cu alloys with 5wt% Zn and 7wt% Zn had the tensile strengths of 300~400MPa and the elongations of 2~18%. The effect of Zn on the tensile strength of Al-Zn-Mg-Cu alloys was insignificant, but Al-Zn-Mg-Cu alloy with high Zn amount had lower elongation.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1048-1049
• /
• 2006

Rapidly solidified ribbon-consolidation processing was applied for preparation of high strength bulk Mg-Zn-Gd alloys. Mg alloys have been used in automotive and aerospace industries. Rapid solidification (RS) process is suitable for the development of high strength Mg alloys, because the process realizes grain-refinement, increase in homogeneity, and so on. Recently, several nanocrystalline Mg-Zn-Y alloys with high specific tensile strength and large elongation have been developed by rapidly solidified powder metallurgy (RS P/M) process. Mg-Zn-Y RS P/M alloys are characterized by long period ordered (LPO) structure and sub-micron fine grains. The both additions of rare earth elements and zinc remarkably improved the mechanical properties of RS Mg alloys. Mg-Zn-Gd alloy also forms LPO structure in -Mg matrix coherently, therefore, it is expected that the RS Mg-Zn-Gd alloys have excellent mechanical properties. In this study, we have developed high strength RS Mg-Zn-Gd alloys with LPO structure and nanometer-scale precipitates by RS ribbon-consolidation processing. $Mg_{97}Zn_1Gd_2$ and $Mg_{95.5}Zn_{1.5}Gd_3$ and $Mg_{94}Zn_2Gd_4$ bulk alloys exhibited high tensile yield strength (470 MPa and 525 MPa and 566 MPa) and large elongation (5.5% and 2.8% and 2.4%).

• Journal of Korea Foundry Society
• /
• v.43 no.6
• /
• pp.286-293
• /
• 2023

In this study, we investigated the microstructural evolution of Al-Mg-Zn aluminum alloy billet during homogenization treatment using OM, SEM, EDS and DSC. There were numerous phases found, such as; AlMgZn, AlMgFe, and AlMgZnSi phases, in the grain of the cast billet. After 6 hours homogenization treatment, Zn was mostly dissolved, whereas, Mg and Si were only partly dissolved. Accordingly, only AlMgFe and AlMgSi remained. After 18 hours, all of the leftover Mg and Si were dissolved, leaving only AlMgFe, which was also found after 24 hours. The results of the alloy design program, JMatPro showed that Mg dissloved more rapidly than Zn. According to the homogenization kinetic equation, Mg and Zn are completely dissolved within 1.9 and 3.5 hours, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.4
• /
• pp.49-53
• /
• 2022

In this study, quantum dot light-emitting diodes (QLEDs) of the optimized EL performance with a radio frequency (RF) sputtered Zn_0.85Mg_0.15O thin film as an electron transport layer (ETL). In typical QLEDs, ZnO nanoparticles (NPs) are widely used materials for ETL layer due to their advantages of high electron mobility, suitable energy level and easy capable of solution processing. However, the instability problem of solution-type ZnO NPs has not yet been resolved. To solve this problem, ZnMgO thin film doped with 15% Mg of ZnO was fabricated by RF sputtering and optimized for the device applied as an ETL. The QLEDs of optimized ZnMgO thin film exhibited a maximum luminance of 15,972 cd/m² and a current efficiency of 7.9 cd/A. Efficient QLEDs using sputtering ZnMgO thin film show the promising results for the future display technology.

• Journal of Advanced Marine Engineering and Technology
• /
• v.9 no.3
• /
• pp.240-249
• /
• 1985

This paper presents the results of the galvanic anode's characteristicsin the Al-Zn-In-Mg and Al-Zn-In-Mg system anodes used aluminium ingot of low purity, 99.5% grade. The results of thses performance tests are as follows: 1) Zn, In and Mg are an available elements to improve the performance of Aluminium alloy anodes. 2) When the range of zinc content in the Al-Zn-In-Mg system anode is 2-5% the more zinc content, the more improve the anode performance. 3) Al-Zn-In-Mg system anode requires a long term over 50 days for the performance test. 4) The composition of Al-Zn-In-Mg system anode which shows the most excellent performance is Al-(2-3%) Zn-(0.02%) In-(1.0%) Mg. 5) When the Al-Zn-In-Mg system anode is annealed for an hour in 500 to 550 .deg. C, the anode performance is improved. 6) The lower average potential and the better corrosion pattern in the Al-Zn-Mg, Al-Zn-In and Al-Zn-In-Mg system anodes, the more current efficiency is improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.10
• /
• pp.811-816
• /
• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.