• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.90-95
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• 2000

The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.415-418
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• 2009

$Zn_{2}SiO_{4}$:Mn green phosphors doped with Mg for PDP were synthesized by solid state reaction method. $Zn_{2}SiO_{4}$:Mn, Mg phosphors with increasing Mg concentration were changed from Rhombohedral to Orthorhombic structure. Photoluminescence intensity of $Zn_{2}SiO_{4}$:Mn phosphors doped with Mg 0.5 mol was definitely higher than that of Mg non-doped sample. The enhanced luminescence with doping Mg in the $Zn_{2}SiO_{4}$:Mn phosphors was interpreted by the increase of energy transfer from host to Mn ions with substitution Mg for Zn in the $Zn_{2}SiO_{4}$:Mn host.

• Journal of radiological science and technology
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• v.19 no.2
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• pp.79-83
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• 1996

The thermoluminescence(TL) response in changing annealing condition, triboluminescence, and darkroom temperature for $Mg_2SiO_4$:Tb phosphor are examined. The experimental results are summerized as follows : 1. The uniformity of TL intensity is better In the disinfected $Mg_2SiO_4$ : Tb than in contaminated one. 2. The triboluminescence of $Mg_2SiO_4$ : Tb is almost not detected even if numbers of $Mg_2SiO_4$ : Tb falling are increased. 3. The fading effect of $Mg_2SiO_4$ : Tb is scarcely affected by freezing room. The followings are resulted from the study. The disinfected $Mg_2SiO_4$ : Tb phosphor should be used in the dose measurement and the immediate reading for $Mg_2SiO_4$ : Tb after exposure is better. And if the reading is not immediately taken, a law darkroom temperature for $Mg_2SiO_4$ : Tb storage is recommended.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.129-136
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• 1998

The effects of MgO on the resistance to corrosion and oxidation of Al2O3-SiC-C refractory have been in-vestigated. The resistance to oxidation was improved as the amount of MgO increased. The resistance to corrosion was enhanced until 2 wt% MgO content but degraded over that content. From the dependence of temperatuer on the oxidation resistance oxidation was suppressed by the microstructural densification caused by spinel formation over 1200~130$0^{\circ}C$and the formation MgO-Al2O3-SiO2 liguid-phase over 130$0^{\circ}C$ The weight loss of specimens containing MgO with various purity at range of 95 to 99% and par-ticle size of -0.045 mm to -0.074 mm was examined. The oxidation resistance was not changed signficantly with the particle size and purity of MgO powders.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.280-286
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• 2001

10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$와 $Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.37-42
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• 1983

An attempt was made to derive a possible synthetic mechanism of Fluoro-phlogopite (Mica, 4Mg.$Al_2O_3$.$6SiO_2$.$K_2O$.$2MgF_2$) The pevention of fluorine vaporization turned out to be the key in the synthesis of Mica in question.l Consequently the quinary system of Mica was seperately synthesized ; frist 4MgO.$Al_2O_3-6SiO_2$(ternary system) was sintered at 135$0^{\circ}C$ and $K_2O$ and $MgF_2$ were added and second 4MgO.$Al_2O_3-6SiO_2$.$K_2O$ (quarternary system) was heat-treated at 135$0^{\circ}C$ and $MgF_2$ was added. The ternary system resulted in Proto-enstatite Cordierite and Spinel phases while Forsterite and Leucite were shown in the quarternay system . In both methods Fluoro-phlogopite was systhesized but the solid state reactions to form Mica from the ternary system and the quarternary system were different. High temperature reactions in the formation of Mica were investigated employing XRD, DTA and SEM The study of the synthesis of Mica indirectly suggested a method of phase analysis of quinary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) and quarternary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) at various temperatures.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.04a
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• pp.109-115
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• 2000

In the present study, (10%$Al_2O_3$+5%Si)/AZ91 Mg hybrid composite was fabricated using the squeeze casting method. During squeeze casting, molten Mg was infiltrated into the preform of 10%$Al_2O_3$+5%Si and reaction product of $Mg_2Si$ intermetallic compound was formed by the reaction between molten Mg and Si powder. Microstructure has been observed and mechanical properties were evaluated for the reaction squeeze cast (RSC) hybrid composite. It was found that Si powder totally reacted with molten Mg to form $Mg_2Si$. Reinforcement ($Al_2O_3$) and the reaction product ($Mg_2Si$) are fairly uniformly distributed in Mg matrix for the squeeze cast hybrid composite. Mechanical properties were improved with hybridization of reinforcements, namely higher hardness and enhanced wear resistance comparing squeeze cast (15%$Al_2O_3$)/AZ91 Mg composite.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2441-2445
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• 2009

The effects of Si -doped MgO have been investigated in order to improve the material properties of the MgO protective layer in plasma display panels. A small amount of Si is added to the MgO pellet while the MgO layer is being deposited by using an electron-beam evaporation method. Both the surface characteristics of the protecting layer and the electro-optical properties of 4 in. test panels are investigated, such as XRD patterns, SEM images, firing and sustain voltages, secondary electron emission coefficient($\gamma$), luminance, luminous efficacy and lifetime. The firing and sustain voltage are minimized when Si concentration is 0.038%, where the luminance and luminous efficacy increase up to 17% and 26% compared with that of the pure MgO film, separately, and lifetime also shows good characteristics.