• Proceedings of the KIEE Conference
• /
• 2007.11a
• /
• pp.169-170
• /
• 2007

PDP는 LCD, OLED등과 같은 FPD(Flat Panel Display)들과는 차별화된 우수성을 가지고 있다. 따라서 본 논문에서는 AC-PDP에서의 MgO박막의 material property를 향상시키기 위하여 MgO pellet에 미소량의 Ca를 첨가하였으며 이에 따른 MgO박막을 통해 Ca의 첨가에 따른 효과를 분석하였다. MgO박막은 e-beam evaporation 방법을 사용하였으며 4인치 테스트 패널을 만들어서 방전개시전압, 방전유지전압, 어드레싱지터를 측정하였으며 방전효율은 Ca가 0.025%, 0.035%, 0.042%가 첨가 되었을 때 각각 비교하였으며, 0.035%가 첨가 되었을 때가 가장 좋은 효율을 가진다.

• Journal of Electrochemical Science and Technology
• /
• v.4 no.3
• /
• pp.102-107
• /
• 2013

The electrochemical properties of Mg-doped $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ and pure $LiFe_{0.5}Mn_{0.5}PO_4$ olivine cathodes are examined and the lattice parameters are refined by Rietveld analysis. The calculated atomic parameters from the refinement show that $Mg^{2+}$ doping has a significant effect in the olivine $LiFeMnPO_4$ structure. The unit cell volume is 297.053(2) ${\AA}^3$ for pure $LiFe_{0.5}Mn_{0.5}PO_4$ and is decreased to 296.177(1) ${\AA}^3$ for Mg-doped $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ sample. The doping of $Mg^{2+}$ cation with atomic radius smaller than $Mn^{2+}$ and $Fe^{2+}$ ion induces longer Li-O bond length in $LiO_6$ octahedra of the olivine structure. The larger interstitial sites in $LiO_6$ octahedra facilitate the lithium ion migration and also enhance the diffusion kinetics of olivine cathode material. The $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ sample with larger Li-O bond length delivers higher discharge capacities and also notably increases the rate capability of the electrode.

• Korean Journal of Materials Research
• /
• v.32 no.3
• /
• pp.132-138
• /
• 2022

Zintl phase Mg₃Sb₂ is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg₃Sb₂ has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg₃Sb₂ was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg₃Sb₂ was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg_3.8Sb_2-xSn_x (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg_3.8Sb_1.994Sn_0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1388-1390
• /
• 2007

This paper investigates how various concentrations of lithium ion influence on crystallization of MgO in thin films formed by spin coating and an the discharge characteristic in a flat fluorescent lamp structure. The XRD results indicate $Li^+$ ion enhances the growth of MgO crystal in a spin coated thin film. The discharge property with the $Li^+$ ion doped MgO films show the lithium ion in MgO film clearly reduce the initial discharge voltages of test devices. Interestingly, the test panels with various doped MgO film have somewhat higher static memory margin of than that of pure-MgO owing probably to the pore structure of spin coated MgO films. The CL spectra, which confirm that the doping creates defects energy levels in the band gap of MgO, show the $F^+$ center is the main defects in doped MgO films.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.401-406
• /
• 1998

For the applications in optical waveguides and devices, LiNbO_3$ single crystals need to overcome the weakness of optical damage due to the inhomogeneities of laser-induced refractive index. This problem can be solved by doping of Mg in LiNbO_3$ and proton exchange of LiNbO_3$. In this study, to understand the mechanism of optical damage resistance in LiNbO_3$, the changes of lattice defects in LiNbO_3$ caused by MgO doping and acid treatment were observed indirectly by $OH^-$ absorption bands using a FT-IR spectrophotometer. The effect of lattice defects on temperature, heat-treatment and polishing were also investigated. It is shown that MgO doping increases optical damage resistance by generating the defects of $Mg_{Nb}^{2+}$ in the lattice of LiNbO_3$, and that proton exchange by implantation of $H^+$ ion in the hexagonally closest packed oxygen layers on the surface of LiNbO_3$, makes lattice defects, which diffuse into the crystal after heat-treatment above $400^{\circ}C$.

• Progress in Superconductivity and Cryogenics
• /
• v.16 no.2
• /
• pp.36-41
• /
• 2014

Temperature dependence of magnetic moment (m-T) and the magnetization (M-H) at 5 K and 20 K of the in situ processed $MgB_2$ bulk pellets with/without carbon (C) doping were examined. The superconducting critical temperature ($T_c$), the superconducting transition width (${\delta}T$) and the critical current density ($J_c$) were estimated for ten test samples taken from the $MgB_2$ bulk pellets. The reliable m-T characteristics associated with the uniform $MgB_2$ formation were obtained for both $MgB_2$ pellets. The $T_cs$ and ${\delta}Ts$ of all test samples of the undoped $MgB_2$ were the same each other as 37.5 K and 1.5 K, respectively. The $T_cs$ and ${\delta}Ts$ of the C-doped $MgB_2$ were 36.5 K and 2.5 K, respectively. Unlike the m-T characteristics, there existed the difference among the M-H curves of the test samples, which might be caused by the microstructure variation. In spite of the slight $T_c$ decrease, the C doping was effective in enhancing the $J_c$ at 5 K.

• Korean Journal of Materials Research
• /
• v.20 no.3
• /
• pp.155-160
• /
• 2010

In this study, we investigated primary biocompatibility and osteogenic gene expression of porous granular BCP bone substitutes with or without strontium (Sr) doping. In vitro biocompatibility was investigated on fibroblasts like L929 cells and osteoblasts like MG-63 cells using a cell viability assay (MTT) and one cell morphological observation by SEM, respectively. MTT results showed a cell viability percent of L929 fibroblasts, which was higher in Sr-BCP granules (98-101%) than in the non-doped granules (92-96%, p < 0.05). Osteoblasts like MG-63 cells were also found to proliferate better on Sr-doped BCP granules (01-111%) than on the non-doped ones (92-99%, p < 0.05) using an MTT assay. As compared with pure BCP granules, SEM images of MG-63 cells grown on sample surfaces confirmed that cellular spreading, adhesion and proliferation were facilitated by Sr doping on BCP. Active filopodial growth of MG-63 cells was also observed on Sr-doped BCP granules. The cells on Sr-doped BCP granules were well attached and spread out. Gene expression of osteonectin, osteopontin and osteoprotegrin were also evaluated using reverse transcriptase polymerase chain reaction (RT-PCR), which showed that the mRNA phenotypes of these genes were well maintained and expressed in Sr-doped BCP granules. These results suggest that Sr doping in a porous BCP granule can potentially enhance the biocompatibility and bone ingrowth capability of BCP biomaterials.

• Transactions on Electrical and Electronic Materials
• /
• v.2 no.4
• /
• pp.24-29
• /
• 2001

GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

• Journal of the Semiconductor & Display Technology
• /
• v.6 no.4
• /
• pp.29-32
• /
• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1057-1059
• /
• 2008

Study of the ion-induced-, photo- and exo-electron emission from a Sc doped MgO protective layer has been performed. It is established that doping with Sc increases photo- and especially exo-electron emission from MgO films while the ion-induced electron emission coefficient $\gamma$ stays unchanged.