• 제목/요약/키워드: Mg doping

검색결과 182건 처리시간 0.03초

Ca-doping MgO에 따른 전기광학적 특성 (A study on the electrode-optical characteristics of AC-PDP with Ca-doping MgO)

  • 이동욱;조성용;정선길;이해준;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.169-170
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    • 2007
  • PDP는 LCD, OLED등과 같은 FPD(Flat Panel Display)들과는 차별화된 우수성을 가지고 있다. 따라서 본 논문에서는 AC-PDP에서의 MgO박막의 material property를 향상시키기 위하여 MgO pellet에 미소량의 Ca를 첨가하였으며 이에 따른 MgO박막을 통해 Ca의 첨가에 따른 효과를 분석하였다. MgO박막은 e-beam evaporation 방법을 사용하였으며 4인치 테스트 패널을 만들어서 방전개시전압, 방전유지전압, 어드레싱지터를 측정하였으며 방전효율은 Ca가 0.025%, 0.035%, 0.042%가 첨가 되었을 때 각각 비교하였으며, 0.035%가 첨가 되었을 때가 가장 좋은 효율을 가진다.

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Structural and Electrochemical Properties of Doped LiFe0.48Mn0.48Mg0.04PO4 as Cathode Material for Lithium ion Batteries

  • Jang, Donghyuk;Palanisamy, Kowsalya;Kim, Yunok;Yoon, Won-Sub
    • Journal of Electrochemical Science and Technology
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    • 제4권3호
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    • pp.102-107
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    • 2013
  • The electrochemical properties of Mg-doped $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ and pure $LiFe_{0.5}Mn_{0.5}PO_4$ olivine cathodes are examined and the lattice parameters are refined by Rietveld analysis. The calculated atomic parameters from the refinement show that $Mg^{2+}$ doping has a significant effect in the olivine $LiFeMnPO_4$ structure. The unit cell volume is 297.053(2) ${\AA}^3$ for pure $LiFe_{0.5}Mn_{0.5}PO_4$ and is decreased to 296.177(1) ${\AA}^3$ for Mg-doped $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ sample. The doping of $Mg^{2+}$ cation with atomic radius smaller than $Mn^{2+}$ and $Fe^{2+}$ ion induces longer Li-O bond length in $LiO_6$ octahedra of the olivine structure. The larger interstitial sites in $LiO_6$ octahedra facilitate the lithium ion migration and also enhance the diffusion kinetics of olivine cathode material. The $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ sample with larger Li-O bond length delivers higher discharge capacities and also notably increases the rate capability of the electrode.

Effect of Sn Doping on the Thermoelectric Properties of P-Type Mg3Sb2 Synthesized by Controlled Melting, Pulverizing Followed by Vacuum Hot Pressing

  • Rahman, Md. Mahmudur;Kim, Il-Ho;Ur, Soon-Chul
    • 한국재료학회지
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    • 제32권3호
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    • pp.132-138
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    • 2022
  • Zintl phase Mg3Sb2 is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg3Sb2 has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg3Sb2 was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg3Sb2 was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg3.8Sb2-xSnx (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg3.8Sb1.994Sn0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

The discharge characteristic of Li ion doped MgO film in a flat fluorescent lamp structure

  • Ryu, Si-Hong;Lee, Seong-Eui;Ahn, Sung-Il;Choi, Kyung-Cheol
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1388-1390
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    • 2007
  • This paper investigates how various concentrations of lithium ion influence on crystallization of MgO in thin films formed by spin coating and an the discharge characteristic in a flat fluorescent lamp structure. The XRD results indicate $Li^+$ ion enhances the growth of MgO crystal in a spin coated thin film. The discharge property with the $Li^+$ ion doped MgO films show the lithium ion in MgO film clearly reduce the initial discharge voltages of test devices. Interestingly, the test panels with various doped MgO film have somewhat higher static memory margin of than that of pure-MgO owing probably to the pore structure of spin coated MgO films. The CL spectra, which confirm that the doping creates defects energy levels in the band gap of MgO, show the $F^+$ center is the main defects in doped MgO films.

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$OH^-$ 흡수밴드에 의한 $LiNbO_3$ 단결정의 격자결함에 관한 연구 (A study on the lattice defects in $LiNbO_3$ single crystal by crystal by $OH^-$ absorption band)

  • 조용석;강길영;윤종규
    • 한국결정성장학회지
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    • 제8권3호
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    • pp.401-406
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    • 1998
  • LiNbO_3$ 단결정의 광학소자 광도파관 등의 응용을 위하여는 빛의 조사에 따라 굴절률이 변하는 광손상을 극복하여야 한다. 이러한 광손상 극복은 LiNbO_3$ 에 MgO를 첨가한 단결정의 성장과 산처리를 통하여 가능하다. 본 연구에서는 LiNbO_3$ 의 광손상 극복 기구를 이해하기 위하여, FT-IR을 이용하여 LiNbO_3$ 단결정에 MgO 첨가와 산처리가 발생시키는 격자결함의 변화를 OH- 흡수밴드를 통하여 간접적으로 관찰하였다. 또한 액체 헬륨을 이용한 온도강하시 생기는 격자결함의 관찰과 산처리한 시편의 광택연마와 열처리에 따른 격자결함으 조사하였다. MgO 첨가는 LiNbO_3$ 격자내 $Mg_{Nb}^{2+}$ 결함을 발생시켜 광손상 저항을 증가시키며, 산처리는 결정표면의 산소층에 $H^+$이온이 침입하여 격자결함을 발생시키며, 이 격자결함은 $400^{\circ}C$이상에서 열처리하면 $H^+$가 결정내부로 확산하여 들어감을 확인하였다.

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Tc and Jc distribution in in situ processed MgB2 bulk superconductors with/without C doping

  • Kim, C.J.;Kim, Y.J.;Lim, C.Y.;Jun, B.H.;Park, S.D.;Choo, K.N.
    • 한국초전도ㆍ저온공학회논문지
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    • 제16권2호
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    • pp.36-41
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    • 2014
  • Temperature dependence of magnetic moment (m-T) and the magnetization (M-H) at 5 K and 20 K of the in situ processed $MgB_2$ bulk pellets with/without carbon (C) doping were examined. The superconducting critical temperature ($T_c$), the superconducting transition width (${\delta}T$) and the critical current density ($J_c$) were estimated for ten test samples taken from the $MgB_2$ bulk pellets. The reliable m-T characteristics associated with the uniform $MgB_2$ formation were obtained for both $MgB_2$ pellets. The $T_cs$ and ${\delta}Ts$ of all test samples of the undoped $MgB_2$ were the same each other as 37.5 K and 1.5 K, respectively. The $T_cs$ and ${\delta}Ts$ of the C-doped $MgB_2$ were 36.5 K and 2.5 K, respectively. Unlike the m-T characteristics, there existed the difference among the M-H curves of the test samples, which might be caused by the microstructure variation. In spite of the slight $T_c$ decrease, the C doping was effective in enhancing the $J_c$ at 5 K.

스트론튬(Strontium)이 도핑된 다공성 BCP 뼈 이식제가 조골세포에 미치는 영향 (Effect of Strontium Doped Porous BCP as Bone Graft Substitutes on Osteoblast)

  • 변인선;;서형석;이병택;송호연
    • 한국재료학회지
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    • 제20권3호
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    • pp.155-160
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    • 2010
  • In this study, we investigated primary biocompatibility and osteogenic gene expression of porous granular BCP bone substitutes with or without strontium (Sr) doping. In vitro biocompatibility was investigated on fibroblasts like L929 cells and osteoblasts like MG-63 cells using a cell viability assay (MTT) and one cell morphological observation by SEM, respectively. MTT results showed a cell viability percent of L929 fibroblasts, which was higher in Sr-BCP granules (98-101%) than in the non-doped granules (92-96%, p < 0.05). Osteoblasts like MG-63 cells were also found to proliferate better on Sr-doped BCP granules (01-111%) than on the non-doped ones (92-99%, p < 0.05) using an MTT assay. As compared with pure BCP granules, SEM images of MG-63 cells grown on sample surfaces confirmed that cellular spreading, adhesion and proliferation were facilitated by Sr doping on BCP. Active filopodial growth of MG-63 cells was also observed on Sr-doped BCP granules. The cells on Sr-doped BCP granules were well attached and spread out. Gene expression of osteonectin, osteopontin and osteoprotegrin were also evaluated using reverse transcriptase polymerase chain reaction (RT-PCR), which showed that the mRNA phenotypes of these genes were well maintained and expressed in Sr-doped BCP granules. These results suggest that Sr doping in a porous BCP granule can potentially enhance the biocompatibility and bone ingrowth capability of BCP biomaterials.

The Mg Solid Solution far the P-type Activation of GaN Thin Films Grown by Metal-Organic Chemical Vapor Deposition

  • Kim, KeungJoo;Chung, SangJo
    • Transactions on Electrical and Electronic Materials
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    • 제2권4호
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    • pp.24-29
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    • 2001
  • GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

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Effect of $Mg^{2+}$ co-doping on luminescent properties of $ZnGa_2O_4:Mn^{2+}$

  • Singh, Binod Kumar;Bartwal, Kunwar Singh;Ryu, Ho-Jin
    • 반도체디스플레이기술학회지
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    • 제6권4호
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    • pp.29-32
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    • 2007
  • Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

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Effect of Sc doping on the electron emission properties of an MgO protective layer.

  • Matulevich, Y.T.;Lee, Min-Suk;Moon, Sung-Hwan;Choi, Jong-Seo;Zang, Dong-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1057-1059
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    • 2008
  • Study of the ion-induced-, photo- and exo-electron emission from a Sc doped MgO protective layer has been performed. It is established that doping with Sc increases photo- and especially exo-electron emission from MgO films while the ion-induced electron emission coefficient $\gamma$ stays unchanged.

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