• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• ETRI Journal
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• 제27권2호
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• ETRI Journal
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• 제27권6호
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• Journal of electromagnetic engineering and science
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• 제13권2호
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• pp.127-133
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• 2013

We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{\mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.

• 대한전자공학회논문지TC
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• 제41권8호
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• pp.105-111
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• 2004

본 논문에서는 밀리미터파 대역에서 고이득과 광대역 특성을 갖는 MHEMT(Metamorphic High Electron Mobility Transistor) cascode 증폭기를 설계 및 제작하였다. Cascode 증폭기 제작을 위해 0.1 ㎛ InGaAs/InAlAs/GaAs MHEMT를 설계ㆍ제작하였다. 제작된 MHEMT는 드레인 전류 밀도 640 mA/mm, 최대 전달컨덕턴스(gm)는 653 mS/mm를 얻었으며, 주파수 특성으로 f/sub T/는 173 GHz, f/sub max/는 271 GHz의 우수한 특성을 나타내었다. Cascode 증폭기는 CPW 전송선로를 이용하여 광대역 특성을 얻을 수 있도록 정합회로를 설계하였으며, 1단과 2단 증폭기의 2가지 종류로 회로를 설계하였다. 설계된 증폭기는 본 연구에서 개발된 MHEMT MIMIC 공정을 이용해 제작되었다. 제작된 cascode 증폭기의 측정결과, 1단 증폭기는 3 dB 대역폭이 31.3∼68.3 GHz로 37 GHz의 넓은 대역 특성을 얻었으며, 대역내에서 평균 9.7 dB 및 40 GHz에서 최대 11.3 dB의 S21 이득 특성을 나타내었다. Cascode 2단 증폭기는, 3 dB 대역폭이 32.5∼62.0 GHz로 29.5 GHz의 대역폭과 대역내에서 평균 20.4 dB 및 36.5 GHz에서 최대 22.3 dB의 높은 이득 특성을 얻었다.

• 한국진공학회지
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• 제15권6호
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• pp.637-641
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• 2006

본 논문에서는 100 nm 게이트 길이를 갖는 InGaAs/InAlAs/GaAs MHEMT(metamorphic high electron mobility transistors)m의 DC와 RF 특성을 분석 하였다. 이중 노광 방법으로 ZEP520/P(MMA-MAA)/PMMA 3층 구조의 레지스터와 게이트 길이 100 nm인 게이트를 제작하였다. 게이트의 단위 폭이 $70\;{\mu}m$인 2개의 게이트와 길이가 100 nm로 제작된 MHEMT를 DC 및 RF특성을 조사하였다. 최대 드레인 전류 밀도는 465 mA/mm, 상호전달 컨덕턴스는 844 mS/mm이, RF 측정으로부터 전류 이득 차단 주파수는 192 GHz와 최대 진동주파수 310 GHz인 특성을 보였다.

• ETRI Journal
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• 제42권4호
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• pp.549-561
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• 2020

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.

• 대한전자공학회논문지TC
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• 제42권5호
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• pp.61-68
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• 2005

본 논문에서는 낮은 변환손실 특성의 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) resistive 믹서를 설계 및 제작하였다. MIMIC resistive 믹서는 $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT (High Electron Mobility Transistor)를 이용하여 설계 및 제작되었다. 제작된 MHEMT는 드레인 전류 밀도 665 mA/mm, 최대 전달컨덕턴스(Gm)는 691 mS/mm를 얻었으며, RF 특성으로 fT는 189 GHz, fmax는 334 GHz의 양호한 성능을 나타내었다. 94 GHz MIMIC 믹서의 개발을 위해 MHEMT의 비선형 모델과 CPW 라이브러리를 구축하였으며, 이를 이용하여 MIMIC 믹서를 설계하였다. 설계된 믹서는 본 연구에서 개발된 MHEMT MIMIC 공정을 이용해 제작되었다. 94 GHz MIMIC resistive 믹서의 측정결과 변환손실 특성은 94 GHz에서 8.2 dB의 양호한 특성을 나타내었으며, 입력 P1 dB는 9 dBm, 출력 P1 dB는 0 dBm의 결과를 얻었다. Resistive 믹서의 LO-IF 격리도는 94.03 GHz에서 15.6 dB의 측정 결과를 얻었다. 본 논문에서 설계 및 제작된 94 GHz MIMIC resistive 믹서는 기존의 W-band 대역 resistive 믹서와 비교하여 낮은 변환손실 특성을 나타내었다.