• 한국세라믹학회지
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• 제34권3호
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• pp.241-248
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• 1997

RuO2 박막은 SiO2(1000$\AA$)Si와 MgO(100) 단결정 위에 낮은 증착온도에서 hot-wall MOCVD법으로 증착시켰다. 그리고 박막의 특성에 미치는 공정변수의 영향을 고찰하였다. 25$0^{\circ}C$의 비교적 낮은 온도에서부터 RuO2의 단일상을 얻었으며 SiO2(1000$\AA$)Si위에 증착된 RuO2박막은 무질서한 배향을 보이는 반면 MgO(100)단결정 위에 증착시킨 RuO2박막의 경우에는 (hk0) 배향성을 보이는 것을 관찰하였다. 증착온도가 증가함에 따라 RuO2박막의 결정성은 증가하였고 전기적 비저항은 감소하였다. O2유량이 감소함에 따라 RuO2박막의 비저항은 감소하였으며, 증착온도 35$0^{\circ}C$, O2 유량 50sccm에서 증착된 두께 2600$\AA$-RuO2박막의 비저항은 52.7$\mu$$\Omega$-cm이었으며 이는 고 유전물질의 하부전극으로 이용하기에 적합하다.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• 한국진공학회지
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• 제20권5호
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• pp.361-366
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• 2011

본 연구에서는 분광 반사 측정용으로 개조된 metalorganic chemical vapor deposition를 이용하여 GaN의 성장을 반응기 내부에서 실시간으로 관찰하였다. 분광 반사법에서는 190~861 nm의 p-편광된 빛을 시편에 $75^{\circ}$로 입사시킨 후 뒤 GaN 박막으로부터 반사되어 나오는 빛을 분석한다. 관찰된 반사 스펙트럼은 다중반사로 인하여 간섭현상도 함께 보여주고 있는데, 이때 위아래로 진동하는 폭은 박막의 결정성이 나쁘면 줄어들었고, 이는 박막 내부에 존재하는 많은 결함에 의해 입사된 빛이 산란되거나 흡수되어 전체적으로 반사강도가 크게 감소하였기 때문으로 판단된다. 또한 가장 강한 보강간섭을 나타내는 파장을 선택하여 $NH_3$의 공급여부에 따른 강도변화를 실시간을 관찰하였는데, 10초 차단한 경우에는 큰 변화는 없었지만, 30초 이상인 경우에는 뚜렷한 강도 증가가 관찰되었고, 계속 차단하였을 때도 높아진 강도로 계속 유지되었다. 이러한 현상은 $NH_3$를 공급했을 때 표면은 N로 덮여 있었지만, $NH_3$ 공급을 차단하면 GaN의 높은 질소평형증기압으로 인하여 표면의 질소가 탈착되어 표면은 금속성의 Ga으로 덮인 상태로 바뀌었기 때문에 반사강도가 약간 상승한 것으로 보인다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

• 한국진공학회지
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• 제7권3호
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• pp.187-194
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• 1998

저압 유기금속 화학기상증착법을 이용하여 $600^{\circ}C$와 $620^{\circ}C$에서 InP 기판 위에 격자 일치된 InGaAsP 에피층을 성장하였다. InGaAsP 에피층의 기상에서의 조성에 따른 고상에 서의 조성의 변화를 분석하여, 3족 원소의 경우에는 기상에서 반응이 일어나는 표면으로의 3족 원료의 확산에 의해 조성이 결정되었으며, 5족의 경우에는 As과 P의 증기압의 차이와 $AsH_3$, $PH_3$의 열분해 효율의 차이에 의해 조성이 결정되었다. 측정 온도에 따른 PL스펙트 럼의 변화를 분석하여 75K 이하의 저온에서 비정상적인 PL스펙트럼 피크의 거동을 관찰하 였다. 이러한 PL피크의 비정상적인 거동은 투과 전자현미경 분석과 투과 스펙트럼 분석을 통해 국부적인 ordering의 차이에 의한 에너지 갭의 공간적인 변화에 의해 나타나는 것으로 설명되었다.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.2020-2021
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• 2004

Distributed optical feedback by gain coupling in V-groove quantum-wire lasers is investigated using InGaAs/AlGaAs active materials grown by metalorganic chemical vapor deposition (MOCVD). In order to avoid grating overgrowth during the fabrication of DFB structures, a newly developed constant MOCVD growth method is employed. Gain anisotropy in emission spectra near Bragg wavelength, resulting from optical feedback along the DFB direction, is clearly observed at room temperature.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.229-230
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• 1997

• 한국진공학회지
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• 제4권S1호
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• pp.81-86
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• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.