• Laser Solutions
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• v.12 no.4
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• pp.6-11
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• 2009

The LDS(Laser Direct Structuring) process uses thermoplastic polymers with a additive compound that serves as plating seed after the activation by laser. It can realize industry requirement such as miniaturization of electrical component, design flexibility and reduction of production steps. The purpose of this study is to introduce LDS, and to investigate the fundamental mechanism. Also the characteristics of conductive patterns were investigated with respect to laser fluence and intensity. We have used a pulsed fiber laser (wavelength : 1064nm) and copper electroless plating to fabricate conductive patterns. The result showed that laser induced metal-organic complex was caused metalization by electroless copper plating, the critical laser fluence was $1.41\;J/cm^2$ at a scan speed of 1 m/s.

• Tribology and Lubricants
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• v.5 no.1
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• pp.44-50
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• 1989

High strength steel is similar to carbon steel in its composition. This material is developed originally for special uses such as aerospace and automobile due to its high strength and shock-free property in spite of lightness. But the chemical attraction of high strength steel is serious, which includes comminution of formation, metalization and strengthening. Machining results in built-up edge between this material and the tool. Especially the work hardening behavior results in tool life shortening, which was caused by temperature generation during machining. In this study, cooling system was made in which liquid nitrogen is supplied to circulate in order to make up for these weaknesses. Machining of high strength steels, which is recognized as difficult to machine materials, was conducted after tool is cooled at -195$\circ$C. Experimental results showed that the tool was cooled down rapidly below -195$\circ$C in about 200 seconds. The tool temperature of machining with cooling system was lowered by 60~95$\circ$C than that of machining in room temperature. The hardness of the surface of chip is decreased by machining with cooling system. And the machining using the cooling system made it possible to increase shear angle, to retain smooth surface on chip without built-up-edge and to get a better roughness.

• Laser Solutions
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• v.12 no.1
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• pp.7-13
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• 2009

Engineering ceramics as sapphire are widely used in industry owing to their superior mechanical and corrosion properties. However, micromachining of sapphire is a considerable challenge due to its transparency. Recently, direct ablation of sapphire has been demonstrated with a visible laser pulse at sufficiently high laser intensity. In this work, the theoretical model for pulsed laser ablation of sapphire is suggested and numerical analysis is carried out using the model. Sapphire ablation begins with plasma generation by the laser interaction with surface defects, impurities and contaminations in the initial stage of machining. Subsequent absorption of the visible laser beam can be explained by three mechanisms: metalization of sapphire surface due to the EUV radiation from the hot plasma, increments of surface roughness and temperature-dependent absorption coefficient. Comparison of the computation results with experimental observation indicates that the proposed model of sapphire is reasonable.

• Proceedings of the Korean Reliability Society Conference
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• 2004.07a
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• pp.147-151
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• 2004

In this study, an optical fiber assembly directly coupled with a laser diode or a photo diode is designed to confirm high reliable optical coupling efficiency of optical transmitter(Tx) and receiver(Rx). The optical fiber assembly is fabricated by soldering an optical fiber and a Kovar ferrule using a glass solder after inserting an optical fiber through a Kovar ferrule. The Kovar which has good welding characteristics is applied to introduce laser welding technique. The glass solder has excellent thermal characteristics such as thermal shift delamination compared with PbSn, AuSn solder previously used usually. Furthermore, the glass solder doesn't need fiber metalization and this enables low cost fabrication. However, the glass soldering is high temperature process over 35$0^{\circ}C$ and the convex shape after solidification due to surface tension causes the stress concentration on optical fiber. The stress concentration on the optical fiber increases the optical insertion loss and possibility of crack formation. The shape of glass solder was designed referring to 2-D Axi-symmetric FEM simulation. To test the mechanical reliability, mechanical vibration test and shock test were done according to Telcorida GR-468-Core protocol. After each test, the optical loss of the stress distributed fiber assembly didn't exceed 0.5 dB, which passes the test.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.389-394
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• 2015

Direct reduced iron was made using an electric furnace. The reduction ratio of direct reduced iron varied depending on the grade of iron ore. Coal played an important role as a reducing agent in making the direct reduced iron. The coal must contain a suitable amount of volatile components having high calorie values and low impurity content. In this study, oxidized pellets were directly reduced using anthracite as a reductant in an electric furnace. Direct reduction behaviors of hematite and magnetite pellets were confirmed in a coal-based experiment. Reduction behaviors were demonstrated by analyzing the chemical compositions, measuring the reducibility, and observing the phase changes and microstructure. The superior reducibility of hematite pellets can be ascribed to their high effective diffusivity, which is due to their high porosity. The quickly after reducing for 40min and achieves a high value at the end of the reduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.370-375
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• 2016

In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.174-175
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• 2007

A programmable metallization cell (PMC) memory structure with copper-saturated GeTe solid electrolyte films doped by nitrogen was prepared on a TiW bottom electrode by a co-sputtering technique at room temperature. The $Ge_{45}Te_{55}$ solid electrolyte films deposited with various $N_2$/Ar flow ratios showed an increase of crystallization temperature and especially, the electrolyte films deposited at $N_2$/Ar ratios above 30% showed a crystallization temperature above $400^{\circ}C$, resulting in surviving in a back-end process in semiconductor memory devices. The device with a 200 nm thick $Cu_{1-x}(Ge_{45}Te_{55})_x$ electrolyte switches at 1 V from an "off " state resistance, $R_{off}$, close to $10^5$ to an "on" resistance state, Ron, more than 20rders of magnitude lower for this programming current.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.189-194
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• 2011

Si-cell was prepared with various types owing to the etching times textured by the KOH etching solution. The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor, and the metalization was done using by the Al back electrode and Ag front electrode. Textured Si surface was etched by the pyramid formation. The efficiency and the fill factor was increased in the Si-cell with a large size of pyramids, because of the series resistances decrease depending on the increasing of the photon absorbance. Increasing of the absorbance occurred the induction of the short current and open voltage, and then the efficiency was increased.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.15-20
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• 2019

Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).

• Journal of the Korean Electrochemical Society
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• v.4 no.4
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• pp.160-165
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• 2001

The eletrochemical charateristics of mercapto compound additives on the copper electroplating for semi conductor metalization were investigated. Mercapto compounds including sulfur atom is known that they activate deposition rate in eletroplating. Four different types of mercapto compounds were chosen with different concentration and both the characteristics of plating and throwing power were investigated by electrochemical experiments such as Hull cell test, Haring-Blum cell, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance). 3-Mercapto-1-propanesulfonic acid among 4 different mercapto compounds was regarded as the most proper activator with the results of the mass change of Cu metal deposited on eletrode by cathodic polarization and EQCM. The overpotential was more shifted to 100 mV in the concentration of 20 ppm than the solution with only $Cl^-$ in cathodic scan.