• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.1-8
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• 2013

This review article summarizes metal-assisted chemical etching (MAC etch or MACE), an anisotropic etching method for Si, and describes principles, main factors, and recent achievements in literature. In 1990, it was discovered that, with metal catalyst on surface and $H_2O_2$/HF as etchant, Si substrate can be etched anisotropically, in even in solution. In contrast to high-cost vacuum-based dry etching methods, MAC etch enables to fabricate a variety of high aspect ratio nanostructures through wet etching process.

• Journal of Integrative Natural Science
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• v.5 no.4
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• pp.211-215
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• 2012

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.206-211
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• 2015

We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.

• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.855-859
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• 2012

Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.270-270
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• 2010

결정질 실리콘 태양전지는 표면반사에 의한 광 에너지 손실을 최소화 시키고자 식각을 통한 표면 조직화(texturing)가 이루어진다. 단결정 실리콘 웨이퍼의 경우 알칼리 용액(alkali solution)을 사용하여 이방성 식각(anisotropic etching)을 함으로써 표면에 피라미드를 형성하고 광 포획(light trapping) 효과에 의해 반사율을 줄이게 된다. 그러나 피라미드 형성을 통한 반사율 감소에는 한계를 가지고 있다. Metal assisted etching을 기반으로 한 새로운 형태의 텍스쳐링인 nano texturing은 피라미드가 이루어진 표면에 수많은 nm사이즈의 구조를 형성시킴으로써 표면에서의 반사율을 현저히 감소시킨다. 먼저 $AgNO_3$용액으로 웨이퍼 표면에 Ag입자를 코팅한 후, 그 웨이퍼를 다시 $HF/H_2O_2$ 용액으로 일정시간 동안 식각을 거치게 된다. 그로 인해 표면에는 수 nm 사이즈의 구조물들이 피라미드 위에 생성되고, $AgNO_3$의 농도 및 식각 시간에 따라 그 구조물의 크기 및 굵기가 달라진다. 결과적으로 평균 10%이상의 반사율을 보이던 기존 텍스쳐링 웨이퍼에서 3%이하의 낮은 반사율을 얻을 수 있었다. 또한 이런 nano texturing을 n-emitter 형성 공정 등에 따른 영향과 carrer lifetime에 대하여 연구하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.304-304
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• 2012

III-V 화합물 태양전지는 실리콘 등 다른 태양전지에 비해 1sun상 30% 이상의 고효율을 갖고 있고 direct bandgap과 높은 이동도 등의 물질특성과 3족과 5족의 비율 조절로 같은 결정구조에서 에너지 bandgap이 다른 물질들을 만들기에 용이하여 태양전지 스펙트럼의 넓은 영역을 흡수할 수 있는 장점이 있다. 그러나 셀 자체의 물질이 실리콘에 비하여 고가여서 고성능이 요구되는 우주 인공위성 등에 적용이 되었지만, 2000년대 이후로 집광에 적용 가능한 태양전지의 연구를 거듭하여 2005년부터는 값싼 프레넬 렌즈를 이용하여 1 sun에 비해 500배 해당하는 빛을 셀에 집광하여 보다 효율을 증가시킴으로써 지상발전용에도 적용 가능한 셀을 형성하게 되었다. 더불어 태양전지의 효율을 증가시키기 위한 다양한 구조적 변화의 시도도 많이 이루어지고 있다. 최근 실리콘 태양전지의 표면에 texture 구조를 주어 높은 흡수율과 낮은 반사율을 갖게 함으로써 효율을 증가시키는 사례가 많아지고, III-V 화합물 태양전지도 texturing에 의해 증가된 효율을 발표한바 있다. 본 연구에서는 III-V 화합물 InGaP 태양전지의 window층으로 사용되는 InAlP 층에 Metal-assisted chemical etching (mac etching) 방법으로 texture 구조를 형성하여 etching 시간에 따른 InAlP층의 표면 변화와 반사율의 변화를 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.330.2-330.2
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• 2014

III-V족 화합물반도체는 트랜지스터와 광다이오드, 레이저 등의 광전소자 제작물질로 오랫동안 사용 되어 왔다. III-V 화합물 반도체로 제작된 광전소자의 특성을 향상시키기 위해선 다양한 형태의 표면구조가 필요하며, distributed feedback 레이저나 distributed Bragg reflector 레이저의 경우 높은 aspect-ratio를 가지는 구조를 필요로 한다. 현재까지 높은 aspect-ratio를 가지는 III-V족 화합물반도체 구조제작을 위해 reactive ion etching (RIE) 방식을 사용 하였는데, 이 방법은 ion collision에 의한 표면손상과 더불어 에칭 잔여물이 남아 반도체 표면을 오염시키는 문제점을 가지고 있다. 이를 개선하기 위하여 MaCE (Metal-Assited chemical etching)법이 최근 제안되었는데, 본 연구에서는 MaCE 방법을 통하여 다양한 형태의 GaAs 표면구조를 제작하였다. 본 실험을 통하여 에칭용액 조건에 따라 GaAs의 구조적 특성과 morphology가 달라지는 것을 확인하였다.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• v.5 no.5
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• pp.631-636
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• 2018

Extraction of photosynthetic currents from thylakoids was studied using micro pillar structured electrode. Thylakoids were isolated from spinach leaves, and the size and shape of thylakoids were estimated from scanning electron microscopy images. Based on the geometry information of thylakoids, micro pillar shaped electrode was designed and fabricated using metal-assisted chemical etching of silicon wafers. Influence of photovoltaic effect on the silicon-based micro pillar electrode was confirmed to be negligible. Photosynthetic currents were measured in a three-electrode setup with an electron mediator, potassium ferricyanide. Photosynthetic currents from micro pillar electrodes were enhanced compared with the currents from flat electrodes. This indicates the significance of the enhanced contact between thylakoids and an electrode for harvesting photosynthetic electrons.