• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.471-475
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• 2006

$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.89-89
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• 2001

• Vacuum Magazine
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• v.5 no.2
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• pp.10-17
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• 2018

Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

• Journal of Magnetics
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• v.12 no.3
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• pp.103-107
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• 2007

Magnetic field induced structural transition has been systematically investigated for $La_{1-x}Ba_xMnO_3$ with the fine control of carrier doping $(0.15{\leq}x{\leq}0.20)$. Application of a magnetic field results in the suppression of the rhombohedral-orthorhombic transition temperature $(T_s)$ and the increase of insulator-metal transition temperature $(T_{MI})$. Near x = 0.17, where $T_S$ is similar to $T_{MI}$ at zero magnetic field, we found that the $T_S$ smoothly decreased with magnetic field even though it intersected the $T_{MI}$ near 3 T. Also, the magnetostructural phase diagram obtained from the temperature sweep and from the magnetic field sweep is not significantly modified. By comparing the magnetostructural transition in $La_{1-x}Sr_xMnO_3$, we have suggested that the large disorder originated from ionic size differences between La and Ba may weaken the sensitivity of the kinetic energy of $e_g$ electrons on the degree of lattice distortion in $La_{1-x}Ba_xMnO_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.142.2-142.2
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• 2016

The metal intercalation to an organic semiconductor is of importance since the charge transfer between a metal and an organic semiconductor can induce the highly enhanced conductivity for achieving efficient organic electronic devices. In this regard, the changes of the electronic structure of copper phthalocyanine (CuPc) caused by the intercalation of potassium are studied by ultraviolet photoemission spectroscopy (UPS) and density functional theory (DFT) calculations. Potassium intercalation leads to the appearance of an intercalation-induced peak between the highest molecular occupied orbital (HOMO) and the lowest molecular unoccupied orbital (LUMO) in the valence-band spectra obtained using UPS. The DFT calculations show that the new gap state is attributed to filling the LUMO+1, unlike a common belief of filling the LUMO. However, the LUMO+1 is not conductive because the ${\pi}$-conjugated macrocyclic isoindole rings on the molecule do not make a contribution to the LUMO+1. This is the origin of a metal-insulator transition through heavily potassium doped CuPc.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.193-197
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• 2013

In order to investigate the photo-electric property in $VO_2$ film grown by a sol-gel method, the currents generated by the light irradiation and nonirradiation were measured as functions of the bias voltage and the temperature. From the result, the generated current in the film changed with the light irradiation and nonirradiation, and it gradually increased with the bias voltage. In particular, the maximum current was generated at $50^{\circ}C$ under the light irradiation; the temperature is lower comparing the MIT (metal-insulator transition) temperature in $VO_2$. This result indicates that $VO_2$ shows the photo-voltaic effect, and so that, it is expected that the $VO_2$ film is applied for a photo-voltaic device.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.475-482
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• 2010

Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.843-847
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• 1999

The dc resistivity dc magnetization and thermopower of layered perovskite La1.6Ca1.4Mn2O7.07 have been studied. The ceramic sample of La1.6Ca1.4Mn2O7.07 undergoes the metal-insulator transition at 120K while a first-order phase transition from a ferromagnetic phase to a paramagnetic phae is observed at 260 K=TC This behavior is quite different from that of the well-known double exchange ferromagnets such as La1-xCaxMnO3 This phenomenon could be understood by considering the effects of the anisotropic double exchange interaction caused by two dimensional Mn-O-Mn networks in this materials. The dc magnetization between 120K and 250K is nearly constant and decreases rapidly with increasing temperature above 250K The measurements of dc resistivity and thermopower indicate that Zener polaron hopping conduction takes place above 260 K.

• Progress in Superconductivity
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• v.14 no.1
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• pp.24-29
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• 2012

$(TMTSF)_2BF_4$ containing non-centrosymmetric anions is well known to exhibit a metal insulator transition around 37 K by ordering of the anions with a $q_2$=(1/2, 1/2, 1/2) wave vector. We established pressure-temperature phase diagram of the $(TMTSF)_2BF_4$ compound and showed that it can belong to the general phase diagram of the $(TMTSF)_2X$ family. Application of hydrostatic pressure decreases the anion ordering transition temperature and the superconducting state is finally stabilized below 3.77 K under 7.7 kbar. Magnetoresistance measurement on the $(TMTSF)_2BF_4$ under 7.8 kbar is performed but neither the field-induced spin-density-wave state nor the rapid oscillation is observed up to 9 T.

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.281-284
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• 1999

Two La1.82Ca1.18Cu2O6+δ (2126) compounds exhibited different properties depending upon how they were synthesized. The compound prepared under high oxygen pressure showed superconductivity. But the compound prepared under low oxygen pressure did not exhibit superconductivity, and showed a metal-insulator transition. Our study on these compounds shows that a small amount of additional oxygen intercalated into the superconducting phase plays an important role for superconductivity. The Fermi surface of non-superconducting 2126 compound possesses nesting phenomena, which is the reason for the M-1 transition. On the other hand, the superconducting 2126 compound does not show Fermi surface nesting. This is because the additional oxygen removes some electrons from Cu d-orbitals, thereby bradking the Fermi surface nesting.