• 지질공학
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• 제15권4호
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• pp.391-405
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• 2005

포항시 흥해읍 일대 지하수의 수리 지화학적 특성 을 파악하기 위하여, 지표수, 천부지 하수 및 중간심도와 심부 지하수를 대상으로 수질 및 안정 동위 원소 분석 을 수행하였다. 심도별 수질 유형은 지표수 및 천부지하수는 Ca-Cl, 중간 심도는 $Na-HCO_3$, 심부지하수는 Na-Cl형이 우세하게 나타난다. $HCO_3^-$ $SiO_2$의 기원은 천부 지하수의 경우 규산염광물의 풍화에서, 심부지하수는 탄산염 광물의 풍화에서 생성되었다. Ca 및 Mg이 온은 천부 및 심부 모두 석회 석 및 백운석에서 기인한다. 천부 지하수의 $SO_4^{2-}$ 기원은 황철석에서 기인하는 것으로 나타난다 심도의 증가에 따라 pH 및 TDS는 증가하나, Eh및 DO는 감소하는 경향을 보인다. 알카리 금속(K, Na, Li.)은 심부로 갈수록 농도가 증가하나, 알카리 토금속(Mg, Ca) 및 AL은 천부로 갈수록 증가하는 양상을 보인다. 음이온인 할로겐 원소(F, Cl, Br) 및 $HCO_3^-$의 농도도 심부로 갈수록 증가함을 보인다. 산소 및 수소 안정동위원소 평균값은 심부 지하수는 평균값: ${\delta}^{18}O=-10.1\%_{\circ},\;{\delta}D=-65.8\%_{\circ}$, 중간심도는 평균값: ${\delta}^{18}O=-8.9\%_{\circ},\;{\delta}D=-59.6\%_{\circ}$ 천부 지하수는 평균값: ${\delta}^{18}O=-8.0\%_{\circ},\;{\delta}D=-53.6\%_{\circ}$지표수는 평균값: ${\delta}^{18}O=-7.9\%_{\circ},\;{\delta}D=-53.3\%_{\circ}$의 값을 각각 보인다.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1996년도 추계학술대회 논문
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• pp.52-57
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• 1996

Conductive Ceramic Matrix Composite(CMC) of TIC/Al2O3 and Metal Matrix Composite (MMC) of SiC/Al were experienced by the die sinking Electrical Discharge Machining(EDM) for different current and duty factor according to negative polarity. Inthis experimental study Material Removal Rate(MRR) maximum surface roughness four point bending stress distribution and Scanning Electron Microscopy(SEM) Photographs were analysed. the higher MRR was obtained for CMC than MMC but slowly decreased around duty factor of 0.67 for MMC and better surface morphology was found CMC than MMC. The SEM photographs of discharge traces for CMC showe uniform shape about 100 to 200${\mu}{\textrm}{m}$ in diameter but MMC showed irregular shape.

• 광물과 암석
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• 제34권3호
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• pp.169-176
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• 2021

본 연구는 압력을 이용한 제올라이트 내 중금속 양이온 또는 CO₂ 기체 포집 등의 응용연구를 하기 위한 기초 단계로 제올라이트의 압력 및 압력전달 매개체(Pressure-transmitting medium, PTM)에 따른 결정구조의 변화를 알아보기위한 목적으로 실험을 진행하였다. 천연 제올라이트 멜리노이트(Merlinoite, (K,Ca_0.5,Ba_0.5,Na)₁₀ Al₁₀Si₂₂O₆₄× 22H₂O)와 동일한 골격구조를 가지는 합성 물질인 제올라이트-W(K_6.4Al_6.5Si_25.8O₆₄× 15.3H₂O, K-MER)의 압력 하 압력전달 매개체에 따른 선형 압축률 및 체적 탄성률의 변화에 대한 X선 회절연구를 진행하였다. 합성된 시료는 정방정계에 속하는 I4/mmm 공간군으로 확인되었다. 압력전달 매개체 중 제올라이트의 동공 및 채널을 투과할 수 있는 투과 매개체(Penetrating medium)로 물, 이산화탄소를, 비투과 매개체로 실리콘 오일(Silicone-oil)을 각각 사용하였으며, 상압에서 최대 3 GPa까지 약 0.5 GPa 간격으로 가압하였다. 다이아몬드 고압유도장치 및 방사광 X-선원을 이용하여 압력 하 시료의 분말 회절을 측정하였고, 르바일(Le-Bail)법 및 버치-머내한 상태방정식을 이용하여 격자상수 및 체적탄성률의 변화를 관찰하였다. 모든 실험에서 c축의 선형압축률(𝛽^c)은 0.006(1) GPa^-1또는 0.007(1) GPa^-1의 값을 보여 압력 증가 대비 유사한 압축률을 보인 반면, a축의 압축률(𝛽^a)은 실리콘 오일 실험에서 0.013(1) GPa^-1을 보여 물과 이산화탄소 (𝛽^a=0.006(1) GPa^-1) 실험결과에 비해 압축률이 약 두 배정도 큰 것으로 확인할 수 있었다. 체적탄성률(K₀)은 물, 이산화탄소, 실리콘 오일의 실험에서 각각 50(3) GPa, 52(3) GPa, 29(2) GPa로 도출되었다. 압력 증가에 따른 ac면의 orthorhombicity를 측정한 결과 물과 이산화탄소 실험에서는 0.350~0.353의 비교적 일정한 값을 보였으나, 실리콘 오일의 실험에서는 y = -0.005(1)x + 0.351(1)의 함수를 만족시키며 압력이 증가할수록 값이 점차 작아졌다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1297-1298
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• 2006

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by $Al_{2}O_{3}$ as gate dielectrics with atomic layer deposition. About 80 % of the surfaces of the nanowires coated with $Al_{2}O_{3}$ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9 $cm^{2}/Vs$, a peak transconductance of 0.4 ${\mu}S$, and an Ion/Ioff ratio of $10^6$ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio arc remarkably enhanced by 11.5, 32, and $10^6$ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

• 소성∙가공
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• 제19권5호
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• pp.311-319
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• 2010

Rare earth metal Ce has a relatively low melting point and high specific gravity. Because of its significantly high affinity to oxygen, nitrogen and sulfur, it is highly usable as a steel refining agent. However, because Ce compound has relatively high specific gravity, it is difficult to be separated from molten steel through floatation, and it degrades the purity of molten steel, or may clog the nozzle in continuous casting. Such problem may be solved by using an appropriate deoxidation agent together with Ce and settling molten steel sufficiently after refining. Thus a fundamental study in the formation behavior of non-metallic inclusion in Ce added Hyper Duplex STS melts was investigated. The addition amount of Ce, melt temperature were considered as experimental variables. A main non-metallic inclusion in mother alloy is 51(wt%MnO) - 27.6(wt%SiO$_2$)- 10.9(wt%$Cr_2O_3$). Non-metallic inclusion was dramatically decreased and the particle size was fined as the amount of Ce increased. Moreover (%MnO) and (%SiO$_2$) of non-metallic inclusion were decreased. But (%$Al_2O_3$)were relatively increased. The number of non-metallic inclusion were decreased and the large particle size were increased by increasing the temperature of molten steel.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.1-1
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• 1994

;The electronic state calculations for various types of ceramic materials have beell performed by the use of $DV-X\;{\alpha}$ cluster method. The molecular orbital levels and wave functions for model clusters have been computed to study the electronic properties ami chemical bonding of the ceramics. For ${\beta}-sialon(Si_{6-z}Al_zO_zN_{8-z})$ which is a high temperature structural material based on ${\beta}-Si_3N_4$, we have made model cluster calculations to estimate the strength of chemical bonding between atoms by the Mulliken population analysis. It is found that the covalent bonding between Si and N atoms is very strong in pure ${\beta}-Si_3N_4$, but the covalency around solute atom is considerably weakened when Si atom is substituted by AI. This tendency is enhanced by an additional substitution of oxygen atom for N. The result calculated can well explain the experimental data of changes in mechanical properties such as the reductions of Young's modulus and Vickers hardness with increment of z-value in ${\beta}-sialon$. Various model clusters for transition metal oxides which show many interesting physical and chemical properties have also been calculated. High-valent perovskite-type iron oxides EMFe0_3E(M=Ca and Sr) possess very interesting magnetic and chemical properties. In these oxides, iron exists as $Fe^{4+}$ state, but the experimental measurement of Mossba~er effect suggests that disproportionation $2Fe^{4+}=Fe^{3+}+Fe^{5+}$ takes place for $CaFe0_3$ at low temperatures. The model cluster calculations for these compounds indicated the existence of considerably strong covalent bonding of Fe-O. The calculations of hyperfine interaction at iron neucleus show very good agreement with the experimental Mossbauer measurements. The result calculated also implies that the disproportionation reaction is strongly possible by assuming the quenching of breathing phonon mode at low temperatures.tures.

• 공업화학
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• 제8권1호
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• pp.140-145
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• 1997

$Cu/ZnO/ZrO_2$와 MFI계열의 제올라이트(HZSM-5, H-Ga-Sllicate, H-Fe-Silicate)로 이루어진 혼성촉매상에서 이산화탄소 접촉수소화반응을 수행하였다. MFI계열의 제올라이트중 브뢴스테드 산점양이 가장 많은 HZSM-5를 포함한 혼성촉매가 가장 높은 $C_2{^+}$ 탄화수소 수율을 나타내었다. HZSM-5를 포함한 혼성촉매 중에서는 $SiO_2/Al_2O_3$비가 낮을수록, 이온교환 시간이 많을수록 즉 브뢴스테드 산점의 양이 많을수록 $C_2{^+}$ 탄화수소에 대한 수율이 높았다. HZSM-5에 금속이온을 이온 교환 하였을 경우, $HZSM-5{\simeq}Ga/HZSM-5>Zn/HZSN-5$의 순서로 활성이 높았는데 이 또한 브뢴스테드 산점수가 많을수록 활성이 증가하였다.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.165-170
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• 2018

In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.