• Journal of Electrochemical Science and Technology
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• v.10 no.1
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• pp.14-21
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• 2019

Supported liquid membrane process usually is used for recovering or enrichment of valuable metals in the industrial wastewater. But, even if the metals in the wastewater was separated with high chemical selectivity, it cannot be enough concentrated since separation performance of supported liquid membrane (SLM) process is limited by concentration gradient between feed solution and stripping solution. If metal concentration in the stripping solution to be enough low, transport of metal through membrane can be accomplishment constantly. Therefore, Electrodialysis (ED) has been placed after SLM process and the stripping solution of SLM was used as the feed solution for the ED process. Transport of ions in the solutions is successfully performed by ED process. Thus, the metal concentration in the stripping solution does not rise as to stop ion transport. Besides, valuable metals easily are concentrated by ED process for re-use. In this study, effects of operation parameters like initial Cd(II) concentration, HCl concentration in the feed solution of SLM and applied voltage are investigated on separation efficiency, flux and permeability of the both processes. As the feed solution concentration increased, all performance values has increased. When initial concentration of 100 mg/L is used, separation performances (SP) are 55% and 70%, for SLM and consecutive process, respectively. The best HCl concentration in the feed solution of SLM has determined as 2 M, in this conditions SP are 64% and 72%, for SLM and consecutive process, respectively. With increased of applied voltage on ED process, SP of the consecutive process has been raised from 72% to 83%. According to the obtained experimental data, consecutive process has better separation performance than SLM. When the separation performances of both processes were compared for the same operating conditions, it was determined higher the separation efficiency, permeability and flux values of the consecutive process, 8%, 9% and %10.6, respectively. Consequently, the use of the consecutive process increases the performance efficiency of both processes. The consecutive process studied has quite a good chemical separation efficiency, and enrichment capability. Moreover, this process requires few water and energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• Environmental Analysis Health and Toxicology
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• v.19 no.2
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• pp.191-200
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• 2004

Zinc (Zn) is an essential element in biological process, however inadequate Zn status in general population have been recognized. To update the knowledge for Zn-cadmium (Cd) interaction, we studied the intestinal uptake and transport, and the expression of metal transporter proteins (divalent metal transporter 1, DMT1 ; metal transporter protein 1, MTP1 ; zinc transporter 1, ZnTl ; metallothionein 1 , MT1) in duodenum after Cd exposure using Zn deficient animal model. Rats were led Zn deficient (ZnD, 0.5-1.0 mgZn/kg) or Zn supplemented (ZnS, 50mg Zn/kg) diet for 4 weeks, and followed single administration of $^{109}$ CdCl$_2$orally. The body Zn flatus and tissue Cd concentration were determined at 24 hrs after Cd administration. Total body burden of Cd and Cd absorption index (AI, %) were estimated based on the tissue Cd analyzed. DMT1, MTP1, ZnTl and MT1 mRNA were analyzed by using RT-PCR method. Feeding of Zn deficient diet for 4 weeks produced a reduced body weight gain and a depletion of body Zn. Tissue Cd concentration, body burden of Cd and Cd absorption index were higher in the ZnD diet fed rats than the ZnS diet red rats. Especially, Cd concentration in the small intestine (duodenum, jejunum and ileum) and the colon of FeD diet fed rats were higher markedly than in the FeS diet group. The expression levels of DMT1, MTP1 and ZnT1 mRNA in FeD diet fed rats were similar to the FeS diet. The level of MT1 mRNA expression was significantly lower in the FeD than the FeS diet fed rats. Taken together, theses results indicate that Zn deficiency in diet induce an increased intestinal absorption and tissue retention of Cd, and down -regulate the MT1 expression in the intestine which might be play a part of role in Cd absorption and transport in mammalian. These findings suggest that deficiency of essential metal could be enhanced the toxicity of toxic, non-esstial metals through the metal-metal interaction.

• Biomolecules & Therapeutics
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• v.13 no.1
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• pp.1-6
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• 2005

Lead and cadmium are potent environmental toxicants that affect populations living in Europe. Americas, and Asia. Identifying transporters for lead and cadmium could potentially 1 help us better understand possible risk factors. The iron transporter, divalent metal transporter 1 (DMT1), mediates intestinal transport of cadmium, and lead in yeast and fobroblasts overexpressing DMT1. In human intestinal cells knocking down expression of DMT1 attenuated uptake of cadmium and iron but not lead. A possible explanation is the expression of a second transporter for lead in intestine. In astrocytes, however, DMT1 appears to transport lead in an extracellular buffer at pH value. At neutral pH, transport was not mediated by DMT1 but rather by a transporter that is stimulated by bicarbonate and inhibited by 4,4'-diisothiocyanatodihydrostilbene-2,2'-disulfonic acid. The identity of this lead transporter will beverified by future study.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.573-578
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• 2003

The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.226-226
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• 2010

Microstructure, magnetic and transport properties of as-deposited electron-doped $La_{1-x}Ce_xMnO_3$ and hole-doped $La_{1-x}Ce_xMnO_3$ films prepared by pulse laser deposition, with x = 0.1 and 0.3, have been investigated. The microstructural analysis reveals that the $La_{1-x}Ce_xMnO_3$ films have a column-like microstructure and a strip-domain phase with a periodic spacing of about 3c, which were not found for the $La_{1-x}Ce_xMnO_3$ ones. At the same time, the experimental results manifest that there is no fundamental difference in the magnetic and the transport properties between electron- and hole-doped manganite films, except the appearance of ferromagnetic response in the low-doped $La_{0.9}Ce_{0.1}MnO_3$ film at temperatures above the Curie point. The observed magnetic behavior, typical for the Griffiths-like phase, for this film is explained by the percolation mechanism of the ferromagnetic transition and by the presence of strip-domain phase which stimulates the magnetic phase separation.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.7
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• pp.234-238
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• 1983

This paper presents a steady-state computer solution of one-dimensional transport equations, describing a double(metal-semiconductor-metal) contact device, involving only one type of charge carrier. Most of the assumptions and approximations which are ordinarily introduced in order to make the transport equations analytically soluble are avoided here. The results are presented mainly in the form of(a) energy contours (b) concentration contours and (c) I-V characteristics. A computation of differential system capacitance as a function of applied voltage is also presented and schematic corrections are introduced for image force effects.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.243-244
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• 2008

The Velocity Autocorrelation Function (VAF) of the sodium ions is calculated for a range of temperature from 250K to 1000K and converted into the linear ac-conductivity and ac-susceptibility response via Fourier transformation. A peak is found in the conductivity around $6{\times}10^{12}Hz$ that has some of the character of a Poley absorption. Here it is shown to be due to an harmonically coupled site vibrations of the sodium atoms, which extend only over a limited range. At frequencies below the peak the conductivity tends towards a constant i.e. dc value corresponding to a constant flow of ions through the simulation cell. At high temperatures the conductivity due to this ion transport process behaves like a metal with an insulator to metal transition occurring around a specific temperature.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.8-18
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• 2010

When metal oxides are exposed to chemical potential gradients, ions are driven to diffusive mass transport. During this transport process, the divergence of ionic fluxes offers the formation/annihilation of oxides. Therefore, the divergence of ionic flux may play an important role in the void formation in oxides. Kinetic equations were derived for describing chemical potential distribution, ionic fluxes and their divergence in oxides. The divergence was found to be the measure of void formation. Defect chemistry in scales is directly related to the sign of divergence and gives an indication of the void formation behavior. The quantitative estimation on the void formation was successfully applied to a growing magnetite scale in high temperature oxidation of iron at 823 K.