• Title/Summary/Keyword: Metal substrate

Search Result 1,518, Processing Time 0.084 seconds

Effects of ${Y_2}{O_3}$Buffer Layer on Ferroelectric Properties of $YMnO_3$Thin Films Fabricated on Pt/$TiO_2$/$SiO_2$/Si Substrate (Pt/$TiO_2$/$SiO_2$/Si 기판 위에 제조된 $YMnO_3$박막의 강유전 특성에 미치는 ${Y_2}{O_3}$버퍼층의 영향)

  • 김제헌;강승구;은희태
    • Journal of the Korean Ceramic Society
    • /
    • v.37 no.11
    • /
    • pp.1097-1104
    • /
    • 2000
  • MOD(Metal-Organic-Decomposition)법에 의해 $Y_2$O$_3$버퍼층에 Pt/TiO$_2$/SiO$_2$/Si 기판 위에 제조한 후, 그 표면 위에 졸-겔 방법으로 YMnO$_3$박막을 형성하였다. 기판의 종류와 수화조건 변화가 YMnO$_3$박막의 결정화 거동에 미치는 영향을 고찰하였으며, 또한 $Y_2$O$_3$버퍼층 유.무에 따른 Mn의 산화상태를 확인하고 이에 따른 유전특성 변화를 연구하였다. $Y_2$O$_3$버퍼층을 삽입하지 않고 직접 기판 위에 형성한 YMnO$_3$박막의 결정상은 기판의 종류 및 Rw 변화에 관계없이 orthorhombic 구조임이 확인되었다. 반면, $Y_2$O$_3$버퍼층 위에 형성된 YMnO$_3$박막의 경우에는 Rw($H_2O$/alkoxide mole ratio)가 0~6 범위 내에서 낮아질술고 hexagonal 결정상 성장에 유리하였으며, 또한 Pt(111)/TiO$_2$/SiO$_2$/Si 기판이 Ptd(200)/TiO$_2$/SiO$_2$/Si에 비하여 결정상 형성에 용이하였다. $Y_2$O$_3$버퍼층은 YMnO$_3$결정상 내에서 $Mn^{4+}$ 이온형성을 억제함으로써 누설전류밀도가 크게 감소되는 효과를 주었으며, 동시에 강유전 특성을 지닌 hexagonal 결정상 형성에 유리하게 작용하였다. 결론적으로, $Y_2$O$_3$는 Pt가 코팅된 Si 기판 위에 YMnO$_3$박막 제조시 그 강유전 특성을 향상시켜주는 우수한 버퍼층 재료임을 확인하였다.

  • PDF

Kinetics for Citric Acid Production from the Concentrated Milk Factory Waste Water by Aspergillus niger ATCC 9142 (Aspergillus niger ATCC 9142 세포에 의해 농축된 우유공장폐수로부터 구연산생산에 대한 동력학 연구)

  • Lee Yong-Hee;Suh Myung-Gyo;Chung Kyung-Tae
    • Journal of Life Science
    • /
    • v.16 no.1
    • /
    • pp.6-11
    • /
    • 2006
  • The waste water from a milk factory was investigated for possibility of use to the production of citric acid by cells of Aspegillus niger ATCC 9142. The addition of $Mn^{2+},\;Fe^{2+}\;and\;Cu^{2+}$ ions to waste increased citric acid production steadily, but addition of metal ion $Mg^{2+}$ decreased the citric acid production. The amount of produced citric acid by Aspegillus niger ATCC 9142 with addition 50 g/1 and 100 g/1 of reducing sugar in milk factory waste water were 7.2 g/1 and 16.5 g/1 respectively. Mathematical model was simulated for their predictability of cell growth, citric acid production and substrate consumption rate and coincided with experimental data.

Design and Fabrication of a Active Resonator Oscillator for Local Oscillator in ISM Band(5.8GHz) (5.8GHz ISM대역 국부 발진기용 능동 공진 발진기 설계 및 제작)

  • 신용환;임영석
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.8 no.4
    • /
    • pp.886-893
    • /
    • 2004
  • In this paper, active resonator oscillator using active band pass filter with gain, active resonator with negative resistance using transistor(agilent ATF-34143) is designed and fabricated. Proposed active resonator oscillator for local oscillator in ISM band(5.8GHz) is designed with 5.5 GHz oscillation frequency. Designed active resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. Active resonator oscillators using active band pass filter with gain show the oscillation frequency of 5.6GHz with the output power of -2dBm and phase noise of -81dBc/Hz at the offset frequency of 100kHz. Active resonator oscillators active resonator with negative resistance show the oscillation frequency of 5.6, 5.8GHz with the output power of -4dBm and phase noise of -91dBc/Hz at the offset frequency of 100kHz.

Design and Fabrication of a Active Resonator Oscillator using Active Inductor and Active Capacitor with Negative Resistance (부성저항 특성을 갖는 능동 인덕터와 능동 캐패시터를 이용한 능동 공진 발진기 설계 및 제작)

  • 신용환;임영석
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.7 no.8
    • /
    • pp.1591-1597
    • /
    • 2003
  • In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

Properties of GaN Film Grown on AlN/PSS Template by Hydride Vapor Phase Epitaxy (AlN/PSS Template 위에 HVPE로 성장한 GaN 막의 특성)

  • Son, Hoki;Lee, YoungJin;Lee, Mijai;Kim, Jin-Ho;Jeon, Dae-Woo;Hwang, Jonghee;Lee, Hae-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.29 no.6
    • /
    • pp.348-352
    • /
    • 2016
  • In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

Characterization of Alpha-Ga2O3 Template Grown by Halide Vapor Phase Epitaxy (HVPE 방법으로 성장한 Alpha-Ga2O3의 특성 분석)

  • Son, Hoki;Ra, Yong-Ho;Lee, Young-Jin;Lee, Mi-Jai;Kim, Jin-Ho;Hwang, Jonghee;Kim, Sun Woog;Lim, Tae-Young;Jeon, Dae-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.31 no.6
    • /
    • pp.357-361
    • /
    • 2018
  • We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

A Simple Plane-Shaped Micro Stator Using Silicon Substrate Mold and Enamel Coil

  • Choi, Ju Chan;Choi, Young Chan;Jung, Dong Geun;Lee, Jae Yun;Min, Seong Ki;Kong, Seong Ho
    • Journal of Sensor Science and Technology
    • /
    • v.22 no.5
    • /
    • pp.333-337
    • /
    • 2013
  • This study proposes a simply fabricated micro stator for higher output power than previously reported micro stators. The stator has been fabricated by inserting enamel coil in silicon mold formed by micro etching process. The most merits of the proposed micro stator are the simple fabrication process and high output power. Previously reported micro stators have high resistance because the micro coil is fabricated by relatively thin-film-based deposition process such as sputtering and electroplating. In addition, the previously reported micro coil has many electrical contact points for forming the coil structure. These characteristics of the micro stator can lead to low performance in output power. However, the proposed micro stator adopts commercially available enamel coil without any contact point. Therefore, the enamel coil of the proposed micro stator has low junction resistance due to the good electrical quality compared with the deposited or electroplated metal coil. Power generation tests were performed and the fabricated stator can produce 5.4 mW in 4000 RPM, $1{\Omega}$ and 0.3 mm gap. The proposed micro stator can produce larger output power than the previously reported stator spite of low RPM and the larger gap between the permanent magnet and the stator.

Evaluation of Th1/Th2-Related Immune Response against Recombinant Proteins of Brucella abortus Infection in Mice

  • Im, Young Bin;Park, Woo Bin;Jung, Myunghwan;Kim, Suk;Yoo, Han Sang
    • Journal of Microbiology and Biotechnology
    • /
    • v.26 no.6
    • /
    • pp.1132-1139
    • /
    • 2016
  • Brucellosis is a zoonotic disease caused by Brucella, a genus of gram-negative bacteria. Cytokines have key roles in the activation of innate and acquired immunities. Despite several research attempts to reveal the immune responses, the mechanism of Brucella infection remains unclear. Therefore, immune responses were analyzed in mice immunized with nine recombinant proteins. Cytokine production profiles were analyzed in the RAW 264.7 cells and naive splenocytes after stimulation with three recombinant proteins, metal-dependent hydrolase (r0628), bacterioferritin (rBfr), and thiamine transporter substrate-binding protein (rTbpA). Immune responses were analyzed by ELISA and ELISpot assay after immunization with proteins in mice. The production levels of NO, TNF-α, and IL-6 were time-dependently increased after having been stimulated with proteins in the RAW 264.7 cells. In naive splenocytes, the production of IFN-γ and IL-2 was increased after stimulation with the proteins. It was concluded that two recombinant proteins, r0628 and rTbpA, showed strong immunogenicity that was induced with Th1-related cytokines IFN-γ, IL-2, and TNF-α more than Th2-related cytokines IL-6, IL-4, and IL-5 in vitro. Conversely, a humoral immune response was activated by increasing the number of antigen-secreting cells specifically. Furthermore, these could be candidate diagnosis antigens for better understanding of brucellosis.

Purification and Characterization of Beta-Glucosidase from Weissella cibaria 37

  • Lee, Kang Wook;Han, Nam Soo;Kim, Jeong Hwan
    • Journal of Microbiology and Biotechnology
    • /
    • v.22 no.12
    • /
    • pp.1705-1713
    • /
    • 2012
  • A gene encoding ${\beta}$-glucosidase was cloned from Weissella cibaria 37, an isolate from human feces. Sequence analysis showed that the gene could encode a protein of 415 amino acids in length, and the translated amino acid sequence showed homology (34-31%) with glycosyl hydrolase family 1 ${\beta}$-glucosidases. The gene was overexpressed in E. coli BL21(DE3) using pET26b(+) and a 50 kDa protein was overproduced, which matched well with the calculated size of the enzyme, 49,950.87 Da. Recombinant ${\beta}$-glucosidase was purified by using a his-tag affinity column. The purified ${\beta}$-glucosidase had an optimum pH and a temperature of 5.5 and $45^{\circ}C$, respectively. Among the metal ions (5mM concentration), $Ca^{2+}$ slightly increased the activity (108.2%) whereas $Cu^{2+}$ (46.1%) and $Zn^{2+}$ (56.7%) reduced the activity. Among the enzyme inhibitors (1 mM concentration), SDS was the strongest inhibitor (16.9%), followed by pepstatin A (45.2%). The $K_m$ and $V_{max}$ values of purified enzyme were 4.04 mM and 0.92 ${\mu}mol/min$, respectively, when assayed using pNPG (p-nitrophenyl-${\beta}$-D-glucopyranoside) as the substrate. The enzyme liberated reducing sugars from carboxymethyl cellulose (CMC).

Purification and Substrate Specificity of Debaryomyces sp. ${\alpha}$-Galactosidase by Mannobiose-Sepharose Affinity Column Chromatograpy (Mannobiose-Sepharose 담체합성 및 Affinity column chromatograpy에 의한 Debaryomyces sp. 유래 ${\alpha}$-Galactosidase의 정제 및 기질 특이성)

  • Park, Gwi-Gun
    • Applied Biological Chemistry
    • /
    • v.49 no.3
    • /
    • pp.180-185
    • /
    • 2006
  • ${\alpha}$-Galactosidase was partially purified from the culture filtrate of Debaryomyces sp. by Mannobiose-Sepharose affinity column chromatography. The galactosidase exhibited maximum activity at pH 4.0 and $60^{\circ}C$, and was stable in the pH and temperature ranges of 3 to 4.5 and 30 to $50^{\circ}C$, respectively. The enzyme was inhibited by $Hg^{2+}\;and\;Ag^{2+}$. The enzyme activity was not affected considerably by treatment with other metal compounds. The enzyme hydrolyzed melibiose to galactose and glucose, raffinose to galactose and sucrose, and $Gal^3Man_3$ ($6^3-{\alpha}$-galactosyl-1,4-mannotriose) to galactose and mannotriose. On the contrary, it could not hydrolyze $Gal^3Man_4$ ($6^3-{\alpha}$-galactosyl-1,4-mannotetraose).