• 대한전자공학회논문지SD
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• 제47권4호
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• pp.69-74
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• 2010

알루미늄 양극산화(aluminum anodization)의 선택적인 적용을 통하여 DRAM 소자를 위한 새로운 패키지 기판을 제작하였다. 에폭시 계열의 코어(core)와 구리의 적층 형태로 제작되는 일반적인 패키지 기판과는 달리 제안된 패키지 기판은 아래층 알루미늄(aluminum), 중간층 알루미나(alumina, $Al_2O_3$) 그리고 위층 구리(copper)로 구성된다. 알루미늄 기판에 양극산화 공정을 수행함으로써 두꺼운 알루미나를 얻을 수 있으며 이를 패키지 기판의 유전체로 사용할 수 있다. 알루미나층 위에 구리 패턴을 배치함으로써 새로운 2층 금속 구조의 패키지 기판을 완성하게 된다. 또한 알루미늄 양극산화를 선택적인 영역에만 적용하여 내부가 완전히 채워져 있는 비아(via) 구조를 구현할 수 있다. 패키지 설계 시에 비아 인 패드(via in pad) 구조를 적용하여 본딩 패드(bonding pad) 및 볼 패드(ball pad) 상에 비아를 배치하였다. 상기 비아 인 패드 배치 및 2층 금속 구조로 인해 패키지 기판의 배선 설계가 보다 수월해지고 설계 자유도가 향상된다. 새로운 패키지 기판의 주요 설계인자를 분석하고 최적화하기 위하여 테스트 패턴의 2차원 전자기장 시뮬레이션 및 S-파라미터 측정을 진행하였다. 이러한 설계인자를 바탕으로 모든 신호 배선은 우수한 신호 전송을 얻기 위해서 $50{\Omega}$의 특성 임피던스를 가지는 coplanar waveguide(CPW) 및 microstrip 기반의 전송선 구조로 설계되었다. 본 논문에서는 패키지 기판 구조, 설계 방식, 제작 공정 및 측정 등을 포함하여 양극산화 알루미늄 패키지 기판의 특성과 성능을 분석하였다.

• 한국수소및신에너지학회논문집
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• 제21권6호
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• pp.500-506
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• 2010

The metal monolith catalyst coated with 15wt% Ni/$MgAl_2O_4$ is applied to the natural gas steam reforming for hydrogen production. To address the improvement of adherence between metal monolith and catalyst coating layer, the pre-calcination temperature as well as the coating conditions of $Al_2O_3$ sol are optimized. When the Fe-Cr alloy monolith is pre-calcined at $900^{\circ}C$ for 6 h, $Al_2O_3$ layer was formed uniformly on the entire surface of the metal substrate. It is seen that the formation of $Al_2O_3$ layer on the monolith surface is essential for the uniform coating of $Al_2O_3$ sol onto the monolith substrate. The monolith catalyst coated with 10wt% $Al_2O_3$ sol shows high $CH_4$ conversion and good thermal stability as compared with the monolith catalyst without $Al_2O_3$ sol coating under severe reaction conditions with high GHSV of 30,000 $h^{-1}$ at $700^{\circ}C$. In addition, the metal monolith catalyst shows higher catalytic activity and better thermal conductivity than 15wt% Ni/$MgAl_2O_4$ pellet catalyst.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.314-314
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• 2013

Recently, flexibility is one of the hottest issues in the field of electronic devices. For flexible displays or solar cells, a development of transparent conductive electrodes (TCEs) with flexibility, bendability and foldability is an essential element. Hundreds of nanometers indium-tin-oxide (ITO) films have been widely used and commercialized as a transparent electrode, but their brittleness make them difficulty to apply flexible electronics. Many researchers have been studying for flexible TCEs such as a few layers of graphene sheets, carbon nanotube networks, conductive polymer films and combinations among them. Although gained flexibility, their transmittance and resistivity have not reached those of commercialized ITO films. Metal grids electrode cannot act as TCEs only, but they can be used to lower the resistance of TCEs with few losses of transmittance. However, the possibility of device shortage will be rise at the devices with metal grids because a surface flatness of TCEs may be deteriorated when metal grids are introduced using conventional methods. In our research, we have developed hybrid TCEs, which combined tens of nanometers ITO film and metal grids which are embedded in flexible substrate. They show $13{\Omega}$/${\Box}f$ sheet resistance with 94% of transmittance. Moreover, the sheet resistance was maintained up to 1 mm of bending radius. Also, we have verified that flexible organic light emitting diodes and organic solar cells with the TCEs showed similar performances compared to commercial ITO (on glass substrate) devices.

• 한국재료학회지
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• 제17권11호
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.572-572
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• 2012

Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.

• 한국분무공학회지
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• 제18권4호
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• pp.196-201
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• 2013

SCR(Selective Catalytic Reduction) is a major after-treatment solution to reduce NOx emission in recent diesel engines. In this study, a metal foam is applied as an alternative SCR substrate and tested in a commercial diesel engine to compared with a conventional ceramic SCR system. Basic engine test from ND-13 mode shows that a metal foam catalyst has lower NOx conversion efficiency than a ceramic catalyst especially over $350^{\circ}C$. A metal foam catalyst has characteristics of high exhaust gas pressure before a SCR catalyst and high heat transfer rate due to its material and structure. NOx conversion efficiency of a metal foam catalyst shows an increasing tendency along with the increase of exhaust gas temperature by $500^{\circ}C$. The effect of urea injection quantity variation is also remarkable only at high exhaust gas temperature.

• 한국분말재료학회지
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• 제20권2호
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• pp.120-124
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• 2013

This study is carried out to develop the new process for the fabrication of ultra-fine electrodes on the flexible substrates using superhydrophobic effect. A facile method was developed to form the ultra-fine trenches on the flexible substrates treated by plasma etching and to print the fine metal electrodes using conductive nano-ink. Various plasma etching conditions were investigated for the hydrophobic surface treatment of flexible polyimide (PI) films. The micro-trench on the hydrophobic PI film fabricated under optimized conditions was obtained by mechanical scratching, which gave the hydrophilic property only to the trench area. Finally, the patterning by selective deposition of ink materials was performed using the conductive silver nano-ink. The interface between the conductive nanoparticles and the flexible substrates were characterized by scanning electron microscope. The increase of the sintering temperature and metal concentration of ink caused the reduction of electrical resistance. The sintering temperature lower than $200^{\circ}C$ resulted in good interfacial bonding between Ag electrode and PI film substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.219-219
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• 2012

The formation and thermal desorption behaviors of octanethiol (OT) SAMs on single crystalline Au (111) and polycrystalline Au, Ag, and Cu substrates were examined by X-ray photoelectron microscopy (XPS), thermal desorption spectroscopy (TDS), and contact angle (CA) measurements. XPS and CA measurements revealed that the adsorption of octanethiol (OT) molecules on these metals led to the formation of chemisorbed self-assembled monolayers (SAMs). Three main desorption fragments for dioctyl disulfide (C8SSC8+, dimer), octanethiolate (C8S+), and octanethiol (C8SH+) were monitored using TDS to understand the effects of surface morphology and the nature of metal substrates on the thermal desorption behavior of alkanethiols. TDS measurements showed that a sharp dimer peak with a very strong intensity on single crystalline Au (111) surface was dominantly observed at 370 K, whereas a broad peak on the polycrystalline Au surface was observed at 405 K. On the other hand, desorption behaviors of octanethiolates and octanethiols were quite similar. We concluded that substrate morphology strongly affects the dimerization process of alkanethiolates on Au surfaces. We also found that desorption intensity of the dimer is in the order of Au＞＞Ag＞Cu, suggesting that the dimerization process occurs efficiently when the sulfur-metal bond has a more covalent character (Au) rather than an ionic character (Ag and Cu).

• Journal of Microbiology and Biotechnology
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• 제28권4호
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• pp.571-578
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• 2018

Biofuel production using lignocellulosic biomass is gaining attention because it can be substituted for fossil fuels without competing with edible resources. However, because Saccharomyces cerevisiae does not have a ${\text\tiny{D}}$-xylose metabolic pathway, oxidoreductase or isomerase pathways must be introduced to utilize ${\text\tiny{D}}$-xylose from lignocellulosic biomass in S. cerevisiae. To elucidate the biochemical properties of xylose isomerase (XI) from Piromyces sp. E2 (PsXI), we determine its crystal structure in complex with substrate mimic glycerol. An amino-acid sequence comparison with other reported XIs and relative activity measurements using five kinds of divalent metal ions confirmed that PsXI belongs to class II XIs. Moreover kinetic analysis of PsXI was also performed using $Mn^{2+}$, the preferred divalent metal ion for PsXI. In addition, the substrate-binding mode of PsXI could be predicted with the substrate mimic glycerol bound to the active site. These studies may provide structural information to enhance ${\text\tiny{D}}$-xylose utilization for biofuel production.

• 전자공학회논문지 IE
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• 제43권2호
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• pp.7-10
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• 2006

일반적인 산화 절연 게이트 대신 $BaTa_2O_6$를 사용한 GaN metal-insulator-semiconductor(MIS) 구조를 제작하였다. $Al_2O_3$(0001) 기판 위에서와 GaAs(001) 기판 위에서의 GaN 막의 누설 전류는 각각 $10^{-12}-10^{-13}A/cm^2$와 $10^{-6}-10^{-7}A/cm^2$로 측정되었다. 이 막의 누설전류는 각각 $Al_2O_3$(0001) 기판 위의 GaN인 경우는 45 MV/cm가 넘는 공간전하 제한전류에 의하여, GaAs(001) 기판 위의 GaN인 경우는 Poole-Frenkel 방출에 따른다는 것을 확인하였다.