• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.204-204
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• 2015

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.74-74
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• 1998

• Laser Solutions
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• v.7 no.1
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• pp.37-47
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• 2004

Laser-assisted selective infiltration is a new method of building metal layers to make metal parts layer by layer, in which superheated microscopic metal droplets are infiltrated into a laser-preheated layer of microscopic metal powders. In this work, the selective infiltration of a low melting-point metal, Sn-37Pb wt%, was conducted to investigate the effects of such dominant parameters as superheating temperature, Nd:YAG laser power for preheating, substrate temperature, etc. The optimal conditions for successful selective infiltration of a single layer of microscopic metal powder were experimentally obtained

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.694-699
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• 2014

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on $SiO_2/Si$ substrates using dc magnetron sputtering. Graphene was synthesized on the metal/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at $900^{\circ}C$ and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature ($600^{\circ}C$) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• BMB Reports
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• v.31 no.1
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• pp.25-30
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• 1998

Kinetic studies of L-Alanine dehydrogenase from Bacillus subtilis-catalyzed reactions in the presence of $Zn^{2+}$ were carried out. The substrate (L-alanine) saturation curve is hyperbolic in the absence of the metal ion but it becomes sigmoidal when $Zn^{2+}$ is added to the reaction mixture indicating the positive cooperative binding of the substrate in the presence of zinc ion. The cooperativity of substrate binding depends on the xinc ion concentration: the Hill coefficients ($n_H$) varied from 1.0 to 1.95 when the zinc ion concentration varied from 0 to $60\;{\mu}m$. The inhibition of AlaDH by $Zn^{2+}$ is reversible and noncompetitive with respect to $NAD^+$ ($K_i\;=\;5.28{\times}10^{-5}\;M$). $Zn^{2+}$ itself binds to AlaDH with positive cooperativity and the cooperativity is independent of substrate concentration. The Hill coefficients of substrate biding in the presence of $Zn^{2+}$ are not affected by the enzyme concentration indicating that $Zn^{2+}$ binding does not change the polymerization-depolymerization equilibria of the enzyme. Among other metal ions, $Zn^{2+}$ appears to be a specific reversible inhibitor inducing conformational change through the intersubunit interaction. These results indicate that $Zn^{2+}$ is an allosteric competitive inhibitor and substrate being a non-cooperative per se, excludes the $Zn^{2+}$ from its binding site and thus exhibits positive cooperativity. The allosteric mechanism of AlaDh from Bacillus subtilis is consistent with both MWC and Koshland's allosteric model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.189-192
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• 2001

A simple metal-insulator-metal (MIM) capacitor in a standard $0.25{\;}\mu\textrm{m}$ digital CMOS process is described. Using all six interconnect layers, this capacitor exploits both the lateral and vertical electrical fields to increase the capacitance density (capacitance per unit area). Compared to a conventional parallel plate capacitor in the four upper metal layers, this capacitor achieves lower parasitic substrate capacitance, and improves the capacitance density by a factor of 4. Measurements and an extracted model for the capacitor are also presented. Calculations, model and measurements agree very well.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.36-37
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• 2002

귀금속(noble metal)이나 전이금속(transition metal) 밑층(substrate) 위에 높여진 금속 웃층(metal overlayer)의 자성(magnetism) 연구는 오랫동안 많은 관심의 대상이 되었고, 특히 전이금속을 웃층으로 사용한 경우에 대해서 많은 연구가 있었다 [1]. 전이금속 중에서 바나듐(vanadium; V)은 덩치(bulk) 상태에서는 자성을 가지지 않지만, 귀금속인 Ag(001) 혹은Cu(001) 위에 놓여지면 자성을 가지게 된다는 보고가 있었다 [2]. (중략)