• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.189-194
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• 2024

This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO₂) at a rate of 10.46 kGy (SiO₂)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of Technologic Dentistry
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• v.28 no.2
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• pp.355-366
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• 2006

The purpose of this study was to determine if repeated casting has a detrimental effect on the corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis, vickers hardness test, SEM, EDX and corrosion test were performed to determine the effects of recasting on chemical composition, microstructure, physical property, castability and corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed that major crystal phase contained nickel-chrome compounds, Nickel carbide and Chrome carbide. Microstructure analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed recasting has no effect on microstructure. EDX analysis results indicated the percentage of the main component nickel(Ni) in the specimens of the VeraBond showed a tendency to increase with recasting, but those of other components Carbon(C) showed a tendency to decrease with recasting, Chrome(Cr), Silicon(Si), Aluminium(Al) and molybdenum(Mo) showed no changes in the percentage. The percentage of the main component nickel(Ni) in the specimens of the Rexillium V showed a tendency to increase with recasting, but those of other components silicon(Si), carbon(C) and molybdenum(Mo) showed a tendency to decrease with recasting, chrome(Cr) and aluminium(Al) showed no changes in the percentage. The vickers hardness results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The castability results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The cast and recast specimens of the VeraBond and the Rexillium V showed no differences in the corrosion resistance. The results indicate that the VeraBond and the Rexillium V can be safely recast.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.58.1-58.1
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• 2010

In solar cell module manufacturing, single solar cells has to be joined electrically to strings. Copper stripes coated with tin-silver-copper alloy are joined on screen printed silver of solar cells which is called busbar. The bus bar collects the electrons generated in solar cell and it is connected to the next cell in the conventional module manufacturing by a metal stringer using conventional hot air or infrared lamp soldering systems. For thin solar cells, both soldering methods have disadvantages, which heats up the whole cell to high temperatures. Because of the different thermal expansion coefficient, mechanical stresses are induced in the solar cell. Recently, the trend of solar cell is toward thinner thickness below 180um and thus the risk of breakage of solar cells is increasing. This has led to the demand for new joining processes with high productivity and reduced error rates. In our project, we have developed a new method to solder solar cells with a laser heating source. The soldering process using diode laser with wavelength of 980nm was examined. The diode laser used has a maximum power of 60W and a scanner system is used to solder dimension of 6" solar cell and the beam travel speed is optimized. For clamping copper stripe to solar cell, zirconia(ZrO)coated iron pin-spring system is used to clamp both joining parts during a scanner system is traveled. The hot plate temperature that solar cell is positioned during lasersoldering process is optimized. Also, conventional solder joints after $180^{\circ}C$ peel tests are compared to the laser soldering methods. Microstructures in welded zone shows that the diffusion zone between solar cell and metal stripes is better formed than inIR soldering method. It is analyzed that the laser solder joints show no damages to the silicon wafer and no cracks beneath the contact. Peel strength between 4N and 5N are measured, with much shorter joining time than IR solder joints and it is shown that the use of laser soldering reduced the degree of bending of solar cell much less than IR soldering.

• Korean Chemical Engineering Research
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• v.54 no.5
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• pp.678-686
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• 2016

The effect of internal and shroud nozzle distributor to bubbling fluidized beds which has the size of $0.3m-ID{\times}2.4m-high$ column was modeled by CPFD (Computational Particle-Fluid Dynamics). Metal-grade silicon particles (MG-Si) were used as bed materials which have $d_p=149{\mu}m$, ${\rho}_p=2,325kg/m^3$ and $U_{mf}=0.02m/s$. Total bed inventory and static bed height were 75 kg and 0.8 m, respectively. Effect of vertical internal on the bubble rising velocity was investigated. Bubbles were split by internal when the axial position of the internal from the distributor, z = 0.45 m. Bed pressure drop and axial solid holdup were not affected by internal. However, in the case that axial distance of internal from distributor was too close to jet penetration length, bubbles were not separated and bypassed internal, and faster than without internal or z = 0.45 m.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1602-1608
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• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.18-23
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• 2009

This minireview provides the chosen examples of our recent discoveries in the polymerization of hydrosilanes, dihydrosilole, lactones, and vinyl derivatives using various catalysts. Hydrosilanes and lactones copolymerize to give poly(lactone-co-silane)s with $Cp_2MCl_2$/Red-Al (M = Ti, Zr, Hf) catalyst. Hydrosilanes (including dihydrosilole) reduce noble metal complexes (e.g., $AgNO_3$, $Ag_2SO_4$, $HAuCl_4$, $H_2PtCl_6$) to give nanoparticles along with silicon polymers such as polysilanes, polysilole, polysiloxanes (and silicas) depending on the reaction conditions. Interestingly, phenylsilane dehydrocoupled to polyphenylsilane in the inert nitrogen atmosphere while phenylsilane dehydrocoupled to silica in the ambient air atmosphere. $Cp_2M/CX_4$ (M = Fe, Co, Ni; X = Cl, Br, I) combination initiate the polymerization of vinyl monomers. In the photopolymerization of vinyl monomers using $Cp_2M/CCl_4$ (M = Fe, Co, Ni), the photopolymerization of MMA initiated by $Cp_2M/CCl_4$ (M = Fe, Co, Ni) shows while the polymerization yield decreases in the order $Cp_2Fe$ > $Cp_2Ni$ > $Cp_2Co$, the molecular weight decreases in the order $Cp_2Co$ > $Cp_2Ni$ > $Cp_2Fe$. For the photohomopolymerization and photocopolymerization of MA and AA, the similar trends were observed. The photopolymerizations are not living. Many exciting possibilities remain to be examined and some of them are demonstrated in the body of the minireview.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.8-14
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• 2011

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at $200^{\circ}C$ for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at $800^{\circ}C$ under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were $2.36{\mu}m$ and $3.16{\mu}m$. The quantities of each element were measured as $SiO_{1.07}C_{6.33}$ by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at $80^{\circ}C$ for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.