• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.51-54
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• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1641-1647
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• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Journal of IKEEE
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• v.22 no.2
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• pp.488-490
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• 2018

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characterisitcs, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. To demonstrate the changing characteristics of hysteresis, one of the important features of the feedback field effect transistor, we simulated changing the gate insulating material and the gate metal electrode. The fluctuation in the characteristics changed the $V_{TH}$ of the hysteresis and showed a decrease in width of the hysteresis.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.11
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• pp.3474-3490
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• 1996

A metal matrix composites(MMCs) for A16061 reinforced with silicon carbide particles is fabricated by melt-stirring method. The primary products of MMCs billets are prepared by volume fractions 5 vol% to 20 vol% and particle size $13\mu m$ to $22\mu m$.This paper will be made to examine the microstructure and mechanical properties of fabricated $SiC_p$/Al 6061 composite by melt-stirring and squeeze casting method. The MMC billets is extruded at $500^{\circ}C$ under the constant extrusion velocity $V_e$=2mm/min using curved shape die. Extrusion force, particle rearrangement, micro structure and mechanical properties of extruded composites will be investigated. The mechanical properties of primary billets manufactured by melt-stirring and squeeze casting method will be compared with extrusion specimen. The effect of volume fraction and size of the reinforcements will be studied. The increase in uniformity of particle dispersion is the major reason for an improvement in reliability due to hot extrusion with optimal shape die. Experimental Young's modulus and 0.2% offset yield strength for the extruded MMCs will be compared with theretical values calculated by the Eshelby method. A method will be proposed for the prediction of Young's modulus and yield strength in $SiC_p$ reinforced MMCs.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.259-263
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• 2001

There are several steps such as slicing, lapping, chemical etching and mechanical polishing in the silicon wafer production process. The chemical etching step is necessary to remove damaged layer caused In the slicing and lapping steps. The typical etching liquor is the acid mixture comprising nitric acid, acetic acid and hydrofluoric acid. At present, the waste acid is treated by a neutralization method with a high alkali cost and balky solid residue. A solvent extraction method is applicable to separate and recover each acid. Acetic acid is first separated from the waste liquor using 2-ethlyhexyl alcohols as an extractant. Then, nitric acid is recovered using TBP(Tri-butyl phosphate) as an extractant. Finally hydrofluoric acid is separated with the TBP solvent extraction. The expected recovered acids in this process are 2㏖/l acetic acid, 6㏖/1 nitric acid and 6㏖/l hydrofluoric acid. The yields of this process are almost 100% for acetic acid and nitric acid. On the other hand, it is important to recover and reuse the metal values contained in various industrial wastes in a viewpoint of environmental preservation. Most of industrial products are made through the processes to separate impurities in raw materials, solid and liquid wastes being necessarily discharged as industrial wastes. Chemical methods such as solvent extraction, ion exchange and membrane, and physical methods such as heavy media separation, magnetic separation and electrostatic separation are considered as the methods for separation and recovery of the metal values from the wastes. Some examples of the application of solvent extraction to the treatment of wastes such as Ni-Co alloy scrap, Sm-Co alloy scrap, fly ash and flue dust, and liquid wastes such as plating solution, the rinse solution, etching solution and pickling solution are introduced.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.11
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• pp.61-66
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• 2005

This paper describes a 10-bit 210MHz CMOS current-mode Digital-to-Analog Converter (DAC) consisting of 6 bit MSB current cell matrix Sub-DAC, 2 bit mSB unary current source Sub-DAC, and 2 bit LSB binary weighting Sub-DAC for Wireless LAN application. A new deglitch circuit is proposed to control a crossing point of signals and minimize a glitch energy. The proposed 10-bit CMOS current mode DAC was designed by a $0.35{\mu}m$ CMOS double-poly four-metal technology rate of 210MHz, DNL/INL of ${\pm}0.7LSB/{\pm}1.1LSB$, a glitch energy of $76pV{\cdot}sec$, a SNR of 50dB, a SFDR of 53dB at 200MHz sampling clock and power dissipation of 83mW at 3.3V

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.457-457
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• 2014

오존발생방법은 다양한 방식으로 구현이 가능하나 대용량 장치를 만들기 위해서는 DBD (Dielectric barrier discharge) 구조의 형태의 가지고 있다. 이러한, DBD는 반도체의 MOS (Metal On Semiconductor)의 반대 구조를 가진 SOM (Semiconductor On Metal)의 형태를 가지고 있으며 대부분이 Oxidation 산화물을 가지고 구현한다. 오존발생기는 반도체 공정, 환경 및 정화 등 다양한 분야에 사용이 되고 있는 상황으로 성능개선을 위한 연구가 필요한 상황이다. 대표적으로 사용되는 물질인 $SiO_2$를 가지고 있는 상황이며 Silicon은 에너지 Bandgap이 1.1 eV로 금속위에 증착되어 통상적으로 사용되는 문턱전압은 0.7 V에 해당이 된다. 현재 점차적으로 연구가 진행되고 있는 $Al_2O_3$는 8.8 eV의 bandgap을 가지고 있으며 유전 상수가 9로 $SiO_2$인 3.9보다 높은 유전률 특징을 가지고 있다. 따라서, 본 연구는 오존 발생장치에 사용되는 방전관을 기존의 $SiO_2$에서 $Al_2O_3$ 방식으로 대체하므로써 실제적인 유전율의 값의 차이와 오존 발생시 오존변화율 증대에 관하여 연구하였다. $SiO_2$ 방전관은 Fe 메탈위에 약 3 mm정도의 두께를 binding시켜 N4L사의 PSM1700 모델 LCR meter를 사용하여 1.3 kHz시 7.2 pF의 유전율 확인 할 수 있으며 동일한 조건의 금속 메탈위에 $Al_2O_3$를 binding 시켜 측정한 결과 1.07 kHz시 10.7 pF의 유전율을 가지게 되어 40% 이상 높은 유전율을 가지게 되는 것을 확인 할 수 있다. 오존발생을 위하여 가변 주파수형 트랜스 드라이버를 통한 공진 주파수를 생성하여 방전 증폭을 위한 Amplifier를 통하여 변환률을 높이는 방식을 적용하여 MIDAC사의 I1801모델 적외선 분광기(FT-IR)를 통한 오존발생량을 측정하여 기존의 $SiO_2$의 방전관은 시간당 54 g의 오존 발생률 가지게 된다. $Al_2O_3$는 시간당 70 g 정도의 오존 발생률 가지므로 기존의 $SiO_2$ 보다 발생률 높은 것을 확인 할 수 있다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.3
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• pp.273-277
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• 2005

We prepared $0.25\~l.5um$ poly silicon gate array test group with $SiO_2$ spacers in order to employ NiCo composite salicide process from 15nm Ni/15nm Co/poly structure. We investigate the residual metal shape evolution by varying the rapid thermal silicide anneal temperature from $700^{\circ}C\;to\;1100^{\circ}C$. We observed the residual metals agglomerated into maze type and line type on $SiO_2$ field and silicide gate, respectively as temperature increased. We propose that lower silicide temperature would be favorable in newly proposed NiCo salicide in order to lessen the agglomeration causing the leakage and scum formation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.373-375
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• 2011

최근 태양전지 연구에서 저가격화를 실현하는 방법 중 하나로 폐 실리콘 웨이퍼를 재생하는 방법에 관하여 많은 연구가 진행되고 있다. 그러나 기존 웨이퍼 재생공정은 높은 재처리 비용과 복잡한 공정등의 많은 단점을 가지고 있다. 결정형 태양전지에서 저가격화 및 고효율은 태양전지를 제작하는데 있어 필수 요소 이다. 그 중 결정질 태양전지 고효율을 위한 여러 연구 방법 중 표면 텍스쳐링(texturing)에 관한 연구가 활발하다. 텍스쳐링은 표면반사에 의한 광 손실을 최소화 하여 효율을 증가시키기 위한 방법으로 습식 식각과 건식 식각을 사용하여 태양전지 표면 위에 요철 및 피라미드구조를 형성하여 반사율을 최소화 시킨다. 건식식각은 습식식각과 다른 환경적 오염이 적은 것과 소량의 가스만으로 표면 텍스쳐링이 가능하여 많은 연구가 진행중이다. 건식 식각 중 하나인 RIE(reactive ion etching)는 고주파를 이용하여 플라즈마의 이온과 silicon을 반응 시킨다. 실험은 RIE를 이용하여 SF6/02가스를 혼합하여 비등방성 에칭 및 피라미드 구조를 구현하였다. RIE 공정 중 SF6/02가스는 높은 식각 율을 갖으며 self-masking mechanism을 통해 표면이 검게 변화되고 반사율이 감소하게 된다. 이 과정을 통해 블랙 실리콘을 형성하게 된다. 블랙 실리콘은 반사율 10% 이하로 self-masking mechanism으로 바늘모양의 구조를 형성되는 게 특징이며 표면이 검은색으로 반사율이 낮아 효율증가로 예상되지만 실제 바늘 모양의 블랙 실리콘은 태양전지 제작에 있어 후속 공정 인 전극 형성 시 Ag Paste의 사이즈와 표면 구조를 감안할 때 태양 전지 제작 시 Series resistance를 증가로 효율 저하를 가져온다. 본 연구는 SF6/02가스를 혼합하여 기존 RIE로 형성된 바늘모양의 구조의 블랙 실리콘이 아닌 RIE 내부에 metal-mesh를 장착하여 단결정(100)실리콘 웨이퍼 표면을 텍스쳐링 하였고 SF6/02 가스 1:1 비율로 공정을 진행 하였다. metal-mesh 홀의 크기는 100um로 RIE 내부에 장착하여 공정 시간 및 Pressure를 변경하여 실험을 진행하였다. 공정 시간이 변경됨에 따라 단결정(100) 실리콘 웨이퍼 표면에 피라미드 구조의 균일한 1um 크기의 블랙 실리콘을 구현하였다. 바늘모양의 블랙 실리콘을 피라미드 구조로 구현함으로써 바늘 모양의 단점을 보완하여 태양전지 전기적 특성을 분석하여 태양전지 제작시 변환 효율을 증가시킬 것으로 예상된다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.11a
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• pp.6-6
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• 1996

Ceramic based nanocomposite, in which nano-sized ceramics and metals were dispersed within matrix grains and/or at grain boundaries, were successfully fabricated in the ceramic/cerarnic and ceramic/metal composite systems such as $Al_2O_3$/SiC, $Al_2O_3$/$Si_3N_4$, MgO/SiC, mullite/SiC, $Si_3N_4/SiC, $Si_3N_4$/B, $Al_2O_3$/W, $Al_2O_3$/Mo, $Al_2O_3$/Ni and $ZrO_2$/Mo systems. In these systems, the ceramiclceramic composites were fabricated from homogeneously mixed powders, powders with thin coatings of the second phases and amorphous precursor composite powders by usual powder metallurgical methods. The ceramiclmetal nanocomposites were prepared by combination of H2 reduction of metal oxides in the early stage of sinterings and usual powder metallurgical processes. The transmission electron microscopic observation for the $Al_2O_3$/SiC nanocomposite indicated that the second phases less than 70nm were mainly located within matrix grains and the larger particles were dispersed at the grain boundaries. The similar observation was also identified for other cerarnic/ceramic and ceramiclmetal nanocornposites. The striking findings in these nanocomposites were that mechanical properties were significantly improved by the nano-sized dispersion from 5 to 10 vol% even at high temperatures. For example, the improvement in hcture strength by 2 to 5 times and in creep resistance by 2 to 4 orders was observed not only for the ceramidceramic nanocomposites but also for the ceramiclmetal nanocomposites with only 5~01%se cond phase. The newly developed silicon nitride/boron nitride nanocomposites, in which nano-sized hexagonal BN particulates with low Young's modulus and fracture strength were dispersed mainly within matrix grains, gave also the strong improvement in fracture strength and thermal shock fracture resistance. In presentation, the process-rnicro/nanostructure-properties relationship will be presented in detail. The special emphasis will be placed on the understanding of the roles of nano-sized dispersions on mechanical properties.