• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.316-319
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• 2017

A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal-semiconductor-metal (MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector, modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface and silicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantation with subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improved photoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence the simultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contact interface.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.481-486
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• 1999

Alumina electrostatic chucks for silicon wafer process with wide range of electrical resistivity were fabricated by controlling the amount of $TiO_2$ addition(0, 1.3, 2.0, 2.8 wt%). The dependence of electrostatic force on applied voltage, temperature and humidity was investigated. In addition, response characteristics on applied voltage and relationship between electrical resistivity and electrostatic force characteristics such as Coulomb force and Johnsen-Rahbeck force were discussed.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1684-1685
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• 2011

This paper presents a theoretical and numerical analysis for thermal isolation of silicon micro-structures, especially for a large size with poor thermal conductivity, as well as straightforward solution for such an issue. Additional metal patterns underneath the silicon structures effectively reduces the thermal isolation. Heat transfer mechanism is analyzed using an equivalent circuit of thermal network including plasma, a heat source, heat capacitors, and thermal resistances. The FEM simulation was carried out to investigate the temperature change of silicon micro-structures according to process time. The temperature of silicon micro-structures with 2 ${\mu}m$ thick chrome layer at a steady state is $86^{\circ}C$, an approximately 40% decrease from the silicon microstructure without thin metal ($122^{\circ}C$)

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.48.1-48.1
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• 2010

Mono-crystalline silicon solar cell is fabricated by using alkali metals. These alkali metal, used in wet etching process, must be removed for the high efficiency solar cell. As wet etching process has been adapted due to its low cost. But lots of alkali metals like potassium remains on the silicon surface and acts as impurities. To remove these alkali metals many of cleaning process have to be applied when solar cell manufacturing process. In terms of alkali metal removal, modified etchant solution is required for concise cleaning process. In this paper ethylenediamine was used and proposed for the substituion of postassium hydroxide.

• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.412-417
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• 1999

The analytical results obtained by microwave digestion and acid digestion methods for sample pretreatment to determine metal impurities in silicon wafer by inductively coupled plasma-mass spectrometry (ICP-MS) were compared. In order to decompose the silicon wafer, a mixed solution of $HNO_3$ and HF was added to the sample and the metal elements were determined after removing the silicon matrix by evaporating silicon in the form of Si-F. The recovery percentages of Ni,Cr and Fe were found to be 95∼106% for both microwave digestion and acid digestion methods. The recovery percentage of Cu obtained by the acid digestion method was higher than that obtained by the microwave digestion method. For Zn, however, the microwave digestion method gave better result than the acid digestion method. Fe was added to a silicon wafer using a spin coater. The concentration of Fe in this sample was determined by lCP-MS, and the same results were obtained in the two pretreatment methods.

• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.191-195
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• 2011

Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

• Journal of the Korean Chemical Society
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• v.9 no.1
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• pp.61-65
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• 1965

Metal distribution in the reaction products and system of reactions between organo chloro acid or ester and zinc, silicon, magnesium, and tin under acetonitrile, dioxane, and toluene solvent were determined by means of radioactive tracer prepared by means of a (n, ${\gamma}$) reaction. It was found that the solubility of the organo halogen metal complex was markedly increased in a hydrophilic solvent and was decreased in a nonpolar solvent which resulted in an increased metal distribution in the recovered metal or water washing of the recovered metal mixture. This was also true in the case of the reaction conducted in the presence of a carbonyl compound. The relative increase of the solubility of the metal complex in a hydrophilic solvent was in order of zinc, silicon, tin and magnesium, and in a nonpolar solvent, it was in order of silicon, tin, magnesium, and zinc. There was no formation of organo metallics throughout the reaction sequence. The result was discussed and the observed solvent influence on the present reaction path was criticized.

• Journal of Welding and Joining
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• v.14 no.5
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• pp.145-150
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• 1996

The variation of spatter generation in gas metal arc welding with welding conditions and wire compositions was investigated and interpreted in terms of arc stability. The transition range from a short circuit mode to a spray mode in the mixed gas welding showed an unstable arc and generated the largest amount of spatters. Titanium reduced spatters only in the globular mode of $CO_2$welding and silicon and manganese showed the same effect The effect of silicon and manganese, however, was no longer seen when titanium was added simultaneously to the wire. It is believed that deoxidizers easily form oxides on the anode and make the arc stable even in DCRP welding. The wires with deoxidizers also showed low short circuit frequency, resulting in the increase of large size spatters.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.123-133
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• 1998

Amorphous silicon (a-Si) was crystallized by metal induced crystallization using metal solution. The a-Si films spin coated with a 50,000 ppm Ni solution were crystallized at as low as $500^{\circ}C$. Needlelike morphology, developed as a result of the migration of $NiSi_2$, precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to (111). The crystallization temperature can be lowered to $450^{\circ}C$ by Au addition. The enhancement of crystallization results from the decrease of interfacial energy at the NiSi2/Si interface by Au addition.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.6-11
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• 2003

The multi layer spiral inductors, which enhance the quality factor Q of an inductor fabricated on the silicon substrate, has been designed using a TSMC CMOS 0.2sum 1-poly 5-metal layer technology. To investigate the performance of the designed inductors, a 2.5-dimensional field simulation tool(Momentum) is used. The simulation results show that the quality factor Q of the 5-metal inductor is improved 1.8 times over that of a convention31 spiral inductor at 2GHz for wireless LAN applications.