The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Study on Q Improvement of CMOS Spiral Inductor Using Multi Metal Layer for Silicon Substrate

실리콘 기판에서 다층 메탈을 이용한 CMOS 나선형 인덕터의 Q향상에 관한 연구

  • 손주호 (전북대학교 전기공학과) ;
  • 최석우 (전북대학교 전자정보공학부) ;
  • 김동용 (전북대학교 전자정보공학부)
  • Published : 2003.01.01
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Abstract

The multi layer spiral inductors, which enhance the quality factor Q of an inductor fabricated on the silicon substrate, has been designed using a TSMC CMOS 0.2sum 1-poly 5-metal layer technology. To investigate the performance of the designed inductors, a 2.5-dimensional field simulation tool(Momentum) is used. The simulation results show that the quality factor Q of the 5-metal inductor is improved 1.8 times over that of a convention31 spiral inductor at 2GHz for wireless LAN applications.

Keywords

References

  1. John R. Long and Miles A. Copeland, 'The Modeling, Characterization, and Design of Monolithic Inductors for Silicon RF IC's,' IEEE Journal of Solid-State Circuits, vol. 32, no. 3, pp. 357-368, Mar. 1997 https://doi.org/10.1109/4.557634
  2. Min Park, Seonghearn Lee, Hyun Kyu Yu, Jin Gun Koo and Kee Soo Nam, 'High Q CMOS-Compatible Microwave Inductors Using Double-Metal Interconnection Silicon Technology,' IEEE Microwave and Guided Wave Letters, vol. 7, no. 2, pp. 45-47, Feb. 1997 https://doi.org/10.1109/75.553054
  3. Min Park, Seonghearn Lee, Hyun Kyu Yu and Kee Soo Nam, 'Optimization of high Q CMOS-compatible microwave inductors using silicon CMOS technology,' IEEE MTT-S Digest, pp. 129-132, 1997 https://doi.org/10.1109/MWSYM.1997.604539
  4. Joachim N. Burghartz, Keith A. Jenkins and Mehmet Soyuer, 'Multilevel-Spiral Inductors Using VLSI Interconnect Technology,' IEEE Electron Device Letters, vol. 17, no. 9, pp 428-430, Sep. 1996 https://doi.org/10.1109/55.536282
  5. M. Soyuer, J. N. Burghartz, K A. Jenkins, S. Ponnapalli, J. F. Ewen and W. E. Pence, 'Multilevel monolithic inductors in silicon technology,' ELECTRONICS LETTERS, vol, 31, no. 5, pp. 359-360, Mar. 1995 https://doi.org/10.1049/el:19950241
  6. G. W. Dahlmann and E. M. Yeatman, 'High Q microwave inductors on silicon by surface tension self-assembly,' ELECTRONICS LETTERS, vol. 36, no. 20, pp. 1707-1708, Sep, 2000 https://doi.org/10.1049/el:20001190
  7. 조현묵, '실리콘 IC에서 정사각-나선형 인덕터의 컴퓨터를 이용한 설계,' 공주대학교 생산기술연구소 논문집, 제4권, pp. 119-127, 1996