• Journal of Welding and Joining
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• v.22 no.3
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• pp.45-49
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• 2004

Generally, it is used the compensation spring to compensate the inaccuracy of screen image induced by thermal deformation in CRT monitor. Its mechanism is hi-metallic system made of heterogeneous metals and these springs are bonded by laser welding. But laser welding induces a non-uniform temperature distribution, and residual stress is yielded locally by these temperature deviation. Therefore, this study measures the curvature constant to assess functions of the compensation spring of shadow mask with respect to increment temperature and estimates the effect of residual stress on the performance of tri-metal used to compensation spring.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.244-248
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• 1999

Photoelectrodeposition of copper on semiconductive B-doped diamond films was investigated. There are cleasr morphology differences between photodeposited copper and electrodeposited copper. Photoelecrodeposition proceeded as uniform 2-dimensional growth. On the other hand electrodeposition proceeded as scarce random deposition. By applying this effect we have succeeded in forming a conductive pattern on semiconductive B-doped diamond with the aid of a photo-mask. And it was suggested that the surface reforming caused by photoelectrochemical process could be easily detected by the following metal (copper) deosition method, which is demonstrated as 'Diamond photographic phenomenon'.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.2
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• pp.38-43
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• 2019

Electrochemical etching is a popular process to apply metal patterning in various industries. In this study, the electrochemical etching using a patterned copper layer was proposed to fabricate multilayered structures. The process consists of electrodeposition, laser patterning, and electrochemical etching, and a repetition of this process enables the production of multilayered structures. In the fabrication of a multilayered structure, an etch factor that reflects the etched depth and pattern size should be considered. Hence, the etch factor in the electrochemical etching process using the copper layer was calculated. After the repetition process of electrochemical etching using copper layers, the surface characteristics of the workpiece were analyzed by EDS analysis and surface profilometer. As a result, multilayered structures with various shapes were successfully fabricated via electrochemical etching using copper layers.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1399-1404
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• 2018

This study used an inductively coupled plasma (ICP) dry etching process with a metal amplitude mask to fabricate a double-side notched long-period fiber grating (DNLPFG) for loading sensing. The DNLPFG exhibited increasing resonance attenuation loss for a particular wavelength when subjected to loading. When the DNLPFG was subjected to force loading, the transmission spectra were changed, showing a with wavelength shift and resonance attenuation loss. The experimental results showed that the resonant dip of the DNLPFG increased with increasing loading. The maximum resonant dip of the $40-{\mu}m$ DNLPFG sensor was -26.522 dB under 0.049-N loading, and the largest force sensitivity was -436.664 dB/N. The results demonstrate that the proposed DNLPFG has potential for force sensing applications.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.2 s.344
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• pp.81-87
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• 2006

A small size broadband microstrip patch antenna with small ground plane has been fabricated using MEMS. Multiple layer substrates we used to realize small size and broadband characteristics. The microstrip patch is divided into 4 pieces and each patch is connected to each other using a metal microstrip line. The fabrication please process is simple and only one mask is needed. Two types of microtrip antennas are fabrication Type A is the microstrip antenna with metal lines and type B is the microstrip antenna without metal lines. The size of proposed microstip antenna is $8{\times}12{\times}2mm^3$ and the experimental results show that the antenna type A and type B have the bandwidth of 420MHz at 5.3 GHz and 480MHz at 5.66 GHz, respectively

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.59-63
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• 2013

In this paper, the impact of the copper densities of substrate layers on IC package warpage is studied experimentally and numerically. The substrate strips used in this study contained two metal layers, with the metal densities and patterns of these two layers varied to determine their impacts. Eight legs of substrate strips were prepared. Leg 1 to leg 5 were prepared with a HD (high density) type of strip and leg 6 to leg 8 were prepared with UHD (ultra high density) type of strip. The top copper metal layer was designed to feature meshed patterns and the bottom copper layer was designed to feature circular patterns. In order to consider the process factors, the warpage of the substrate bottom was measured step by step with the following manufacturing process: (a) bare substrate, (b) die attach, (c) applying mold compound (d) and post reflow. Furthermore, after the post reflow step, the substrate strips were diced to obtain unit packages and the warpage of the unit packages was measured to check the warpage trends and differences. The experimental results showed that the warpage trend is related to the copper densities. In addition to the experiments, a Finite Element Modeling (FEM) was used to simulate the warpage. The nonlinear material properties of mold compound, die attach, solder mask, and substrate core were included in the simulation. Through experiment and simulation, some observations were concluded.

• Journal of Technologic Dentistry
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• v.33 no.1
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• pp.93-102
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• 2011

Purpose: The study aimed to evaluate working environment for dental technician by measuring dust level, ventilation conditions and the use of personal protective equipment and to provide basic information required to improve working environment and develop health education programs for dental technician. Methods: A total of 240 dental technician who are registered with the Daegu Association of Dental technician and working at 34 dental laboratories participated in the study. And the dust level was measured at 21 different spots in 16 dental laboratories out of 34. Results: Of 34 dental laboratories, 31 (91.2%) were equipped with a ventilator, but the remaining 3 (8.8%) did not have a ventilator. By the number of ventilator, 1 to 3 ventilators were found in 22 dental laboratories (71.0%), 4 to 6 ventilators were in 7 laboratories (22.5%) and more than 7 ventilators in 2 laboratories(6.5%). According to the frequence of changing filters in dust collector, 20 dental laboratories (58.9%) changed filters every four weeks, 10 laboratories (29.4%) changed them every six weeks and 4 laboratories (11.7%) changed them every eight weeks. Of total respondents, 114 (61.3%) said they wore a mask all the time while working, 56 (29.6%) said they frequently wore a mask, 19 (10.1%) said they did not wear a mask. As for the type of masks, 159 (84.1%) used a disposable mask, 25 (13.2%) used a cotton mask and 5 (2.7%) used an anti-dust mask. For dust sat on their outfits while working, 102 (54.0%) shook their uniforms inside workplace to keep dust off the uniforms, 64 (33.9%) did not anything until they wash their uniforms and 23 (12.1%) shook their uniforms outside workplace to keep dust off the uniforms. Of total respondents, 182 (96.3%) had a particle in their eyes while carrying out grinding work. Based on the measurement of floating dust at workplace, 3 dental laboratories showed dust concentration exceeding the minimum level of 10 mg/$m^3$ allowed under the permit for environment. Of those, 1 laboratory had the dust concentration that was more than 1.5 times higher than the minimum level. Dust concentration was higher in laboratories that used a dust collector with 0.5 horse power and changed filters more than 3 weeks ago. Dust comprised of nickel (more than 70%), chrome (9%) and others. The mean chrome concentration was more than twice higher than the minimum permissible level of 0.5 mg/$m^3$. There were two laboratories that showed chrome concentration exceeding the level of 0.4 mg/$m^3$. Like dust concentration, chrome level was higher in laboratories that used a dust collector with 0.5 horse power and changed filters more than 3 weeks ago. There were six laboratories that had nickel concentration exceeding the minimum permissible level of 1 mg/$m^3$. Of those, one laboratory had nickel concentration that was more than three times higher than the minimum permissible level. Nickel concentration was also higher in laboratories that used a dust collector with 0.5 horse power and changed filters more than 3 weeks ago. Conclusion: It is not likely that heavy metal concentrations found in the study constitute respiratory dust. It is however necessary for health of dental technician to apply the Industrial Safety and Healthy Law to dental laboratories and make recommendations for the use of personal protective equipment, installation of a proper number of ventilators, more frequent change of filters in dust collector and improved ventilation for polishing work. At the same time, dental technician need education on how to use personal protective equipment and how to efficiently remove dust from their uniforms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of Advanced Navigation Technology
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• v.18 no.4
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• pp.364-370
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• 2014

In this paper, high reliable trench formation technique and a novel fabrication techniques for trench gate MOSFET is proposed which is a key to expend application of power MOSFET in the future. Trench structure has been employed device to improve Ron characteristics by shrinkage cell pitch size in DMOSFET and to isolate power device part from another CMOS device part in some power integrated circuit. A new process method for fabricating very high density trench MOSFETs using mask layers with oxide spacers and self-align technique is realized. This technique reduces the process steps, trench width and source and p=body region with a resulting increase in cell density and current driving capability and decrease in on resistance.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.450-455
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• 2000

For further scaling down of the silicon devices, the application of low dielectric constant materials instead of silicon oxide has been considered to reduce power consumption, crosstalk, and interconnection delay. In this paper, the effect of $O_2/SF_6$ plasma chemistry on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. The etch rate of polyimide decreases with the addition of $SF_6$ gas due to formation of nonvolatile fluorine compounds inhibiting reaction between oxygen and hydrocarbon polymer, while applying substrate bias enhances etching process through physical attack. However, addition of small amount of $SF_6$ is desirable for etching topography. $SiO_2$ hard mask for polyimide etching is effective under $O_2$plasma etching(selectivity~30), while $O_2/SF_6$ chemistry degrades etching selectivity down to 4. Based on the above results, $1-2\mu\textrm{m}$ L&S PI2610 patterns were successfully etched.