• 멤브레인
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• 제28권2호
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• pp.136-141
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• 2018

이산화탄소($CO_2$)는 천연 가스, 바이오 가스, 매립 가스의 성분으로 존재할 뿐만 아니라 화석연료의 주요 연소 생성물로써 온실 가스의 주범이다. 특히 내연기관의 연료 고효율을 얻고, 가스 수송시스템의 부식을 방지하며, 기후변화에 선제적으로 대응하기 위해서는 이산화탄소($CO_2$)의 저감 또는 제거 기술이 필수적이다. 지난 수십 년간, 멤브레인 기반 기술의 구성 및 설계 단순성에 의하여 관련 연구가 많이 이루어져 왔으며 많은 발전을 이루었다. 최근 들어, 기존 멤브레인 기반 분리 뿐만 아니라, 새로운 흡착제 기반 분리 기술 등에 대한 관심도 높아지고 있다. 특히, 최근 각광받고 있는 유기-금속 골격체(Metal Organic Frameworks, MOFs)의 경우, 일반 다공질 흡착제와는 다른 독특한 성질(Flexibility, Gating effect 또는 Open Metal Sites 등)로 인하여, 이를 활용한 다양한 기체 분리 연구가 늘어나고 있는 추세이다. 따라서 본 연구에서는 대표적 플렉서블한 물질인 MIL-53(Al)과 강한 결합에너지 site를 다수 보유한 대표적 MOF 물질인 MOF-74(Ni)를 활용하여 온도 및 압력에 따른 이산화탄소 메탄 분리 성능 비교 분석하였으며, 각 물질의 특성별 압력 및 온도에 따라 변화하는 적정 분리 구간을 제시하였다.

• 한국결정성장학회지
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• 제32권1호
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• pp.25-32
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• 2022

인베스트먼트 주조는 정밀기기, 의료분야, 액세서리 등의 제조에 일반적으로 사용되는 생산방식으로 장비의 현대화와 고품질의 재료를 통해 발전을 거듭해 왔으며 그 활용 범위가 확대되고 있다. 본 연구의 목적은 인베스트먼트 주조 공정의 핵심 요소인 금형 온도의 구조적 개선 및 표준화를 도출하여 불량률을 최소화하여 경제성과 생산성을 향상시키는 것이다. 연구의 범위는 소형탕도의 구조와 원리를 이해하기에 적합한 Jewelry 제조 주조 공정에 국한되어 있으며 연구 재료로 soft Wax, 석고 분말 및 14 K Gold를 사용하여 실험적 연구를 수행했다. 그 결과 Alloy 14 k의 주물 패턴에 가장 적합한 주물 표준 온도는 980℃ 플라스크 온도 550℃에서 가장 낮은 난류로 좋은 제품을 생산할 수 있었다. 본 연구의 향후 과제로 소형탕도의 구조 및 표준온도를 데이터를 분석하고, 현장의 생산 불량을 감소시키고 우수한 인베스트먼트 주조 공법의 경쟁력 확보를 위한 데이터를 제공하기 위한 세부 연구가 필요하다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.813-815
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• 2008

We prepared highly transparent and conductive Oxide/Metal/Oxide(OMO) multilayer by sputtering and developed wet etching process of OMO with a clear edge shape for the first time. The transmittance and sheet-resistance of the OMO are about 89% and $3.3\;{\Omega}/sq.$, respectively. We adopted OMO as a gate electrode of transparent TFT (TTFT) array and integrated OLED on top of the TTFT to result in high aperture ratio of bottom emission AM-OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• Ocean and Polar Research
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• 제25권4호
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• pp.447-457
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• 2003

In order to understand the distribution of changes of geochemical characteristics in surface sediments according to various environmental changes around the artificial Lake Shihwa, surface sediments were sampled at $13{\sim}15$ sites form 1997 to 1999 and analyzed by C/S analyzer, ICP/MS and AAS. The average $S/C_{org}$ ratio was 0.35 in the surface sediments, which is similar to 0.36, the characteristic ratio of marine sediments. Heavy metal contents and enrichment factors in the surface sediments tended to be decreasing from the head to the mouth of the Lake Shihwa. With the deposition of fine-grained sediments in the central part of lake, anoxic water column induced the sulfides compounds with Cu, Cd and Zn. Metals such as Al, Fe, Cr, Co, Ni, Cu, Zn and Cd except for Mn and Pb showed relatively high correlation coefficients among them. The contents of Cr, Co, Ni, Cu, Zn and Cd in the surface sediments of the lake were two to five times higher than those in the lake before dike construction and also in outer part of the dike. These are mainly due to the Input of untreated industrial and municipal waste-waters into the lake, and the accumulation of heavy metals by limitation of physical mixing. Although metal contents of the surface sediments at the sites near the water-gate due to outer seawater inflow tended to be lower than those during the desalination, heavy metals were deposited in areas around the new industrial complex in the evidence of spatial distribution of heavy metals in the sediments. This is mainly due to the input of untreated waste-waters from tributaries.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.1-5
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• 2012

In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with $Al_2O_3/HfO_2/Al_2O_3$ (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%${\mu}m$ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.