• 제목/요약/키워드: Metal doping.

검색결과 315건 처리시간 0.026초

Effects of metal dopant content on mechanical properties of Ti-Cu-N films

  • Hyun S. Myung;Lee, Hyuk M.;Kim, Sang S.;Jeon G. Han
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2001년도 추계학술발표회 초록집
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    • pp.37-37
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    • 2001
  • TiN coatings were applied for VarIOUS application fields, because of a good wear-resistance and a high hardness. Typically, TiN thin films show the hardness of 25GPa and friction coefficient of 0.6. However, in many field, one is looking for a more improved tool which has low friction coefficient and high wear resistance. The main motivation of this study is to characterize the influence of copper dopant content on TiN thin films. Ti-Cu-N thin films were deposited onto D2 steel substrates by PVD processing with various magnetron current densities (Cu contents). In this work, we synthesized titanium nitride films similar with reported typical titanium nitride films and synthesized Ti-Cu-N thin films with the addition of elemental copper which is measured improved hardness more than pure TiN films with copper content variables. This films has preferred oriented films of (111) direction. In addition, It was found that there is a strong correlation between content of various metal and film characteristics such as preferred orientation, grain size, hardness and friction coefficient and so, in future study, improved mechanical properties of TiN films can be controlled by change in target current density. The Ti-Cu-N film will show apparent hardness improvement and mechanical properties enhancement, when doping element is added onto TiN thin films. Film structure, chemical composition, mechanical properties were investigated by means of X-ray diffraction(XRD), scanning electron microscopy(SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy(EDS), wear resistance tester and nanohardness tester.

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Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • 장미;정진혁;;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.642-642
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    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

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통전활성소결법으로 제조한 VO2의 금속-절연체 전이 특성에 W와 Mg 첨가가 미치는 영향 (The Effect of Mg/W Addition on the Metal-insulator Transition of VO2 Using Spark Plasma Sintering)

  • 진우찬;김영진;박찬;장혜진
    • 마이크로전자및패키징학회지
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    • 제29권4호
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    • pp.63-69
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    • 2022
  • 이산화 바나듐은 금속-절연체 전이라는 독특한 특성으로 인해 기초적인 소재 연구 및 산업에의 응용을 위한 연구가 꾸준하게 진행되고 있다. 본 연구에서는 통전활성소결법으로 제조한 이산화 바나듐의 금속-절연체 전이 특성에 마그네슘과 텅스텐 첨가가 미치는 영향을 연구하였으며, 덩어리 시편을 대상으로 그 거동을 고찰하였다. 상용 분말과 통전활성소결법을 이용하여 열처리를 진행하여 제작한 시편의 경우 격자 상수의 변화는 크지 않고 이차상이 존재하였으며, 이로 인해 상전이 온도는 64.2-64.6℃에 분포하는 것으로 나타났다. 반면 불순물의 종류와 함량에 따라 전기전도도는 최대 2.4배 증가하거나 최대 57.4배 감소하는 거동을 나타냈다. 열전도도는 불순물의 첨가에 따라 증가하는 거동을 나타냈으며, 상전이 온도 이전에서는 1.8~2.5 W/m·K, 성전이 온도 이후에서는 1.9~2.8 W/m·K의 값을 가졌다. 이러한 물성 변화는 불순물의 첨가로 인한 전하 나르개 농도의 변화, 불순물의 산란중심, 미세구조의 변화 등이 복합적으로 작용한 결과로 해석할 수 있다.

Overview of the Effect of Catalyst Formulation and Exhaust Gas Compositions on Soot Oxidation In DPF

  • Choi Byung Chul;FOSTER D.E.
    • Journal of Mechanical Science and Technology
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    • 제20권1호
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    • pp.1-12
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    • 2006
  • This work reviews the effects of catalyst formulation and exhaust gas composition on soot oxidation in CDPF (Catalytic Diesel Particulate Filter). DOC's (Diesel Oxidation Catalysts) have been loaded with Pt catalyst (Pt/$Al_{2}O_3$) for reduction of HC and CO. Recent CDPF's are coated with the Pt catalyst as well as additives like Mo, V, Ce, Co, Fe, La, Au, or Zr for the promotion of soot oxidation. Alkali (K, Na, Cs, Li) doping of metal catalyst tends to increase the activity of the catalysts in soot combustion. Effects of coexistence components are very important in the catalytic reaction of the soot. The soot oxidation rate of a few catalysts are improved by water vapor and NOx in the ambient. There are only a few reports available on the mechanism of the PM (particulate matter) oxidation on the catalysts. The mechanism of PM oxidation in the catalytic systems that meet new emission regulations of diesel engines has yet to be investigated. Future research will focus on catalysts that can not only oxidize PM at low temperature, but also reduce NOx, continuously self-cleaning diesel particulate filters, and selective catalysts for NOx reduction.

Comparison of Optical Properties of Ga-doped and Ag-doped ZnO Nanowire Measured at Low Temperature

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제15권5호
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    • pp.262-264
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    • 2014
  • Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

Physico-mechanical, AC-conductivity and microstructural properties of FeCl3 doped HPMC polymer films

  • Prakash, Y.;Somashekarappa, H.;Manjunath, A.;Mahadevaiah, Mahadevaiah;Somashekar, R.
    • Advances in materials Research
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    • 제2권1호
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    • pp.37-49
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    • 2013
  • The transition metal salt doped solid polymer electrolyte [TSPE] were prepared with HPMC as a host polymer. The virgin and doped films were prepared by solution-casting method and investigated using wide angle X-ray scattering method. Micro structural parameters like lattice strain (g%), stacking/twin faults, the average number of unit cells counted in a direction perpendicular to the Bragg's plane (hkl) spacing of (hkl) planes dhkl, crystallite size Ds, distortion width, standard deviation were determined by whole pattern powder fitting (WPPF) method, which is an extension of single order method. It is found that the crystallite size decreases with the increase in the content of $FeCl_3$. This decrease is due to increase in localized breaking of polymer network which also accounts for the amorphous nature of the material. The filler inorganic salt $FeCl_3$ acts as plasticizer. FTIR study also confirms and justifies the interaction between the polymer and in-organic salt in the matrix. Physical properties like mechanical stability and Ac conductivity in these films are in conformity with the X-ray results.

SnO2 Hollow Hemisphere Array for Methane Gas Sensing

  • Hieu, Nguyen Minh;Vuong, Nguyen Minh;Kim, Dojin;Choi, Byung Il;Kim, Myungbae
    • 한국재료학회지
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    • 제24권9호
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    • pp.451-457
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    • 2014
  • We developed a high-performance methane gas sensor based on a $SnO_2$ hollow hemisphere array structure of nano-thickness. The sensor structures were fabricated by sputter deposition of Sn metal over an array of polystyrene spheres distributed on a planar substrate, followed by an oxidation process to oxidize the Sn to $SnO_2$ while removing the polystyrene template cores. The surface morphology and structural properties were examined by scanning electron microscopy. An optimization of the structure for methane sensing was also carried out. The effects of oxidation temperature, film thickness, gold doping, and morphology were examined. An impressive response of ~220% was observed for a 200 ppm concentration of $CH_4$ gas at an operating temperature of $400^{\circ}C$ for a sample fabricated by 30 sec sputtering of Sn, and oxidation at $800^{\circ}C$ for 2 hr in air. This high response was enabled by the open structure of the hemisphere array thin films.

Carbon Nanotubes Doped with Nitrogen, Pyridine-like Nitrogen Defects, and Transition Metal Atoms

  • Mananghaya, Michael R.
    • 대한화학회지
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    • 제56권1호
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    • pp.34-46
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    • 2012
  • Dopants and defects can be introduced as well as the intercalation of metals into single wall carbon nanotubes (SWCNTs) to modify their electronic and magnetic properties, thus significantly widening their application areas. Through spinpolarized density functional theory (DFT) calculations, we have systemically studied the following: (i) (10,0) and (5,5) SWCNT doped with nitrogen ($CN_xNT$), (ii) (10,0) and (5,5) SWCNT with pyridine-like defects (3NV-$CN_xNT$), and (iii) chemical functionalization of (10,0) and (5,5) 3NV-$CN_xNT$ with 12 different transition metals (TMs) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, and Pt). Attention was done in searching for the most stable configurations, deformation, calculating the formation energies, and exploring the effects of the doping concentration of nitrogen and pyridine-like nitrogenated defects on the electronic properties of the nanotubes. Also, calculating the corresponding binding energies and effects of chemical functionalization of TMs on the electronic and magnetic properties of the nanotubes has been made. We found out that the electronic properties of SWCNT can be effectively modified in various ways, which are strongly dependent not only on the concentration of the adsorbed nitrogen but also to the configuration of the adsorbed nitrogen impurities, the pyridine-like nitrogenated defects, and the TMs absorbed; due to the strong interaction between the d orbitals of TMs and the p orbitals of N atoms, the binding strengths of TMs with the two 3NV-$CN_xNT$ are significantly enhanced when compared to the pure SWCNTs.

Device Coupling Effects of Monolithic 3D Inverters

  • Yu, Yun Seop;Lim, Sung Kyu
    • Journal of information and communication convergence engineering
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    • 제14권1호
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    • pp.40-44
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    • 2016
  • The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness TILD and dielectric constant εr of the inter-layer distance (ILD), the doping concentration Nd (Na), and length Lg of the channel, and the side-wall length LSW where the stacked FETs are coupled are studied. When Nd (Na) < 1016 cm-3 and LSW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when Nd (Na) > 1016 cm-3 or LSW > 20 nm, the shift decreases and increases, respectively. M3INVs with TILD ≥ 50 nm and εr ≤ 3.9 can neglect the interaction between the stacked FETs, but when TILD or εr do not meet the above conditions, the interaction must be taken into consideration.

LiYSiO4: La 열형광체의 온도에 따른 열발광 특성 (Thermoluminescent Properties by the Cooling Temperature and Grain Size in the LiYSiO4 : La Phosphors)

  • 김영국
    • 한국재료학회지
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    • 제19권9호
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    • pp.494-498
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    • 2009
  • The thermoluminescent phosphors of LiYSi$O_4$ containing rare earth metal(La) dopants of 1 wt.%5 wt.% were prepared, and their TL characteristics have been investigated as a function of parameters such as the doping level and the heating rate. The grain size and cooling temperature of the highly sensitive LiYSi$O_4$: La phosphors have been investigated. The glow curve of LiYSi$O_4$: La has two peaks ($P_1,\;P_2$), and the peak height ratio of the two peaks is called $P_2/P_1$; here, the main peak is $P_2$. Experimental results indicate that the peak height ratios of the glow curve for LiYSi$O_4$: La are clearly correlated with the grain size and cooling temperature. The maximum $P_2/P_1$ ratio 3.25, the maximum sensitivity was observed for a grain size between 100-150 ${\mu}m$. The intensity of the TL peak of the phosphors was linearly proportion to the dose of X-rays.