• 한국결정성장학회지
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• 제34권1호
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• pp.30-35
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• 2024

수소에너지 생산을 위한 물분해 시스템의 효율을 향상시키기 위해서는, 수소발생반응(HER)과 산소발생반응(OER) 각각에서 촉매로 인한 전기화학적 반응에서의 높은 과전압의 감소가 수반되어야 한다. 그 중에서도 전이금속 기반의 화합물들은 현재 상용되고 있는 백금 등의 귀금속을 대체할 촉매 재료로써 주목받고 있다. 본 연구에서는, 저렴한 금속 다공성 소재인 니켈폼(Ni foam)을 지지체로 사용하고, 수열합성 공정을 통해 Fe-doped β-Ni(OH)₂ 마이크로결정을 합성하였다. 또한 OER 특성을 향상시키기 위하여 Mo을 동시도핑하여 합성된 Fe-Mo co-doped β-Ni(OH)₂ 마이크로결정의 형상, 결정구조 및 수전해 특성의 변화를 관찰하였으며, 상용 수전해 시스템의 촉매로서의 적용가능성을 검토하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.230-238
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• 2017

We have proposed an InGaAs-based gate-all-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current ($I_{on}$) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner source-channel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on $I_{on}$, the off-state current ($I_{off}$), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the $In_{0.8}Ga_{0.2}As$ source-side channel region.

• 한국재료학회지
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• 제33권12호
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• pp.525-529
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• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.

• 한국산학기술학회논문지
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• 제15권11호
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• pp.6952-6957
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• 2014

광촉매 반응에서 $TiO_2$에 금속물질을 첨가하면 촉매표면이 변화되며, 이러한 금속물질은 광분해반응의 속도를 증가시킨다. 본 연구에서는 $TiO_2$ 광촉매의 광분해능력을 향상시키기 위해 다양한 방법을 이용하여 개질하였으며, 개질된 광촉매의 광분해특성은 회분식 광반응기를 이용하여 조사하였다. 우수한 $TiO_2$ 광촉매용액을 얻기 위해 여러 종류의 분산제와 안정제를 조사하였으며, 분산제로는 isoproply alcohol, 안정제로는 sodium silicate가 적합하였다. 톨루엔 분해반응을 향상시키기 위해 다양한 금속물질을 $TiO_2$ 광촉매에 첨가하여 광분해효율을 조사한 결과 Pd가 가장 우수하였으며, Cu와 W도 우수하였다. Pd를 첨가한 경우 25%의 제거효율 향상이 있었다. 그러나 Fe의 경우 광촉매분해반응을 상당히 저해하는 것으로 나타났다. $Pd/TiO_2$ 광촉매에 Cu 또는 W를 부가적으로 첨가하여도 촉매의 광분해효율에는 증가가 없었다.

• Advances in Energy Research
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• 제2권2호
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• pp.97-104
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• 2014

A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.

• 전기학회논문지
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• 제67권10호
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• pp.1317-1321
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• 2018

PVDF as a semicrystal polymer, having a structure with C-F dipole moments, has been widely investigated because of its excellent chemical stability, mechanical strength, and ferroelectricity. In this study, ferroelectic ${\beta}$ type - PVDF layer was prepared by using an electrostatic spray deposition method and the effects of the addition of Ni-nitrate in precursor solution on the properties of PVDF layer were evaluated. Crystallinity and chemical structure of the PVDF layer were analyzed by a X-ray diffraction and Fourier Transform Infrared Spectrophotometer. Surface structure and fractured cross section of the layer were examined by a field emission-scanning electron microscope. LCR meter was used to obtain the dielectric properties of the layer. As the addition of an inorganic metal salt in PVDF sol, ${\beta}$ type - PVDF crystals were appeared in the hydrated metal salts doped-layer since the strong hydrogen bondings $(O-H{\cdots}F-C)_n$ due to high polarity of OH- were formed.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.72-72
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• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.425.2-425.2
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• 2014

$TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.114-114
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• 2000

III-nitride 게 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 경우 낮은 저항의 ohmic contact은 필수적이다. p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도(>1018cm-3)의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV 이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 10-2$\Omega$cm2이상의 높은 값을 갖게 만들고 있으며 이에 대한 해결방안으로는 고온의 열처리를 통하여 p-GaN와 금속사이에서 화학적 반응을 일으킴으로써 표면근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechaism을 이용하는 것이다. 이에 본 연구에서는 MOCVD로 성장된 p-GaN 박막을 Mg의 activation을 증가시키기 위해 N2 분위기에서 4분간 80$0^{\circ}C$에서 RTA로 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/ZSi/Ni/Au를 ohmic metal로 하여 contact한 후에 $700^{\circ}C$에서 1분간 rapid thermal annealing (RTA) 처리를 했다. contact resistance를 계산하기 위해 circular-TLM method를 이용하여 I-V 특성을 조사하였고, interface interaction을 알아보기 위해 SEM과 EDX, 그리고 XRD로 분석하였다. 또한 추가적으로 Si 계열의 compound metal인 PdSi와 PtSi에 대한 I-V 특성도 조사하여 비교하여 보았다.