• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

• 한국세라믹학회지
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• 제47권2호
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• pp.132-135
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• 2010

Thermal properties of layered metal chalcogenides such as $WT_2$ (T=S,Se) with two-dimensionally disordered structure were evaluated. Thermal conductivity shows a marked decrease after exfoliation and subsequent restacking because of random stacking of two-dimensional crystalline sheet, which circumvents thermal conduction pathways along longitudinal direction in anisotropic materials.

• Bulletin of the Korean Chemical Society
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• 제26권10호
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• pp.1603-1606
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• 2005

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

• 대한화학회지
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• 제48권5호
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• pp.504-509
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• 2004

구리 금속 분말과 혼합 알칼리금속 다셀레늄화물 용융염 ($KNaSe_x$) 과의 반응을 통하여 판상형태의 결정을 갖는 $KCu_4Se_3$ 화합물을 얻었다. $KCu_4Se_3$화합물의 구조는 X-선 단결정 회절법에의해 결정되었으며 사반면상을 갖는다. (P4/mmm, a=4.013(1)${\AA}$, c=9.712(1)${\AA}$, z=1, R=6.7%). 그 구조는 안티 PbO 구조를 갖는 $Cu_2Se_2$ 층이 겹쳐짐으로서 만들어지는 $[Cu_4Se_3]_n^{n-}$의 이중층으로 구성되어있다. $KCu_4Se_3$의 단결정에 대한 온도 변화에 따른 저항 측정을 통하여 전도체의 특성을 확인하였으며 300 K에서 $1.8{\times}10^{-4}{\Omega}{\cdot}cm$과 20 K에서 $1.0{\times}10^{-6}{\Omega}{\cdot}cm$의 저항 값을 갖는다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.77-81
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• 1992

The purpose of this research was th evaluate conductivity of electricity of Ge-Se-Bi system Chalcogenide glass as a amorphous semiconductor by observing its dissolution and crystallization. In this experiment. Ge-Se-Bi metal powder in the rage of $Ge_{12-25}$, $Se_{65-85}$, $Bi_{2.5-15}$ was used as the sample ore. The ore was. put into a vaccous quartz tube and then melted. The condition of heat treatment was to dispose it to $1000^{\circ}C$ heat for 10 hours and then rapidly quenched it at $3834^{\circ}C$/see. The crystallization of the fused sample ripened as the change of temperature and time, after the crystal core was formell. At that time it was possible to observe the state that $Bi_2Se_3$ and $GeSe_2$ were crystallized. In the experiment of making memberance, the memberance was produced by using the previously experimented bulk sample. And decrystalization was well progressed when Ge was over 15 at %, Se was over 70 at %, and Bi was under 10 at%. As for bulk. when Ge was fixed to 20 at %, the conducting of electricity was increased as Bi gained at %. In the case of memberance, the conductivity was much more increased than that of bulk sample as the increase of at the increase of at % of Bi. In the experiment on $Ge_{20}$, $Se_{77.5}$ and $Bi_{2.5}$, the crystallization sswas most vigorous when they were kept at $330^{\circ}C$ for 4 hours.

• 한국자기학회지
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• 제8권3호
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• pp.111-117
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• 1998

최근 perovskit 구조의 망간산화물에서 발견된 초거대자기저항(colossal magnetoresistance: CMR) 현상의 발견은 물리적 특이성과 공업적인 응용 가능성으로 학계의 큰 주목을 받고 있다. 그런데 이러한 CMR 현상은 망간화산화물외에 pyrochlore 구조의 Tl2Mn2O7과 spinel 구조의 Cr-황화물에서도 관측됨었음이 보고되었다. 본 논문에서는 Cr-황화물 Fe1-xCuxCr2S4 (x=0.0, 0.5, 1.0)의 전자구조를 구재밀도근사(local density approximation: LDA) lineatized muffintin orbital(LMTO) 밴드계산 방법을 이용하여 연구하였다. 그 결과 x=0.0, 0.5에 대한 특성저항은 절반금속(Half-Metal)성질과 얀-텔러(Jahn-Teller) 효과를 적용하여 정성적인 이해가 가능하였다. 특히, x=0.0, 0.5, 1.0각각에 대해서 전도모델을 제시하여, 계산결과로 얻어진 절반금속 전자구조가 CMR 현상과 밀접한 관련이 있음을 예측하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.302-302
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• 2011

The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).