• Journal of Convergence for Information Technology
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• v.9 no.5
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• pp.117-124
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• 2019

This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

• Journal of Korea Foundry Society
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• v.43 no.4
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• pp.187-193
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• 2023

Shell core making is an excellent process in terms of formability and desanding, but when the molten aluminum comes into con- tact with the shell core, gas generation by pyrolysis of the resin is inevitable. In addition, when the ventilation is inadequate, pores will remain inside the casting, which can directly lead to defects of the casting. While studies on the gas generation behavior of shell core making have been reported, the modeling of gas generation has not been extensively investigated. We will develop a gas evolution analysis method that considers the relationship between temperature and gas quantity for the core to be developed. We then use the developed method to analyze the flow and solidification behavior of metal molten metal during core mold design and low-pressure casting of cylinder head products, and predict the occurrence of casting defects to derive a casting method that min- imizes the occurrence of defects.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.2
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• pp.808-816
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• 2012

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers. The FTIR measurements of oxygen and carbon impurities were not in the critical value for solar conversion efficiency. The NAA analysis of metal impurities were also detected the total number of 18 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.6
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• pp.232-236
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• 2008

Recently the shortage of silicon resources especially for poly-silicon of purity higher than 99.9999% leads to search for the more cheap and quick synthesizing routes for silicon feedstock. In order to solve this situation, we investigated the purification process of metallurgical grade (MG) silicon of purity around 99% by the acid leaching and following the unidirectional solidification. MG-Si lumps are pulverized with a planetary mill, and then leached with HCl/$HNO_3$/HF acid solution. As a result, the concentration of metal impurities including Al, Fe, Ca, Mn, etc. decreased dramatically. This process led to silicon content higher than 99.99%. The purified silicon powders were compacted and have been melted and uni-directionally solidified with heat exchange method (HEM) furnace. The properties of multicrystalline silicon ingots were specific resistance of $0.3{\Omega}{\cdot}cm$ and minority carrier life time (MCLT) of $3.8{\mu}{\cdot}sec$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.1915-1920
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• 2013

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers. The FTIR measurements of oxygen and carbon impurities were not in the critical value for solar conversion efficiency. The NAA analysis of metal impurities were also detected the total number of 18 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.8 no.2
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• pp.89-98
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• 1988

This research evaluated factors on cement-based solidification process designed for hazardous sludge produced from electroplating industry. Four factors of sand/cement ratio, water/cement ratio, amount of wet sludge and amount of a precipitator, were investigated in terms of leachability and compressive strength of the solidified materials. Results of triplicate tests and statistical analysis indicated that sand/cement ratio(S/C) had the greatest effect on leaching of Cr(VI) from the solidified materials while water/cement ratio(W/C) on Zn and compressive strength. Cr(VI) was fixed better than Zn by portland cement. An experimental modeing was developed to estimate leached metal concentration and compressive strength at a given condition. Proper mixing criteria were also suggested for the use of the solidified mixture as construction materials. In solidification of 30g dry sludge, optimal condition was studied for S/C ratio, W/C ratio and the weight of precipitator which were 1, 1.5 and 1.075g respectively.

• Environmental Engineering Research
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• v.21 no.1
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• pp.15-21
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• 2016

Magnesium potassium phosphate cement (MKPC) is an effective agent for solidification/stabilization (S/S) technology. To further explore the mechanism of the S/S by MKPC, two kinds of Cd including $Cd(NO_3)_2$ solution (L-Cd) and municipal solid waste incineration fly ash (MSWI FA) adsorbed Cd (S-Cd), were used to compare the effects of the form of heavy metal on S/S. The results showed that all the MKPC pastes had a high unconfined compressive strength (UCS) above 11 MPa. For L-Cd pastes, Cd leaching concentration increased with the increase of Cd content, and decreased with the increase of curing time. With the percentage of MSWI FA below 20%, S-Cd pastes exhibited similar Cd leaching concentrations as those of L-Cd pastes, while when the content of MSWI FA come up to 30%, the Cd leaching concentration increased significantly. To meet the standard GB5085.3-2007, the highest addition of S-Cd was 30% MSWI FA (6% Cd contained), with the Cd leaching concentration of 0.817 mg/L. The S/S of L-Cd is mainly due to chemical fixation, and the hydration compound of Cd was $NaCdPO_4$, while the S/S of S-Cd is due to physical encapsulation, which is dependent on the pore/crack size and porosity of the MKPC pastes.

• Journal of Welding and Joining
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• v.18 no.2
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• pp.86-94
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• 2000

This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7N01 spot-welded by pulse Nd : YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed : center line crack({TEX}$C_{C}${/TEX}), diagonal crack({TEX}$C_{D}${/TEX}), and U shape crack({TEX}$C_{U}${/TEX}). Also, HAZ crack({TEX}$C_{H}${/TEX}) was observed in the HAZ region, furthermore, mixing crack({TEX}$C_{M}${/TEX}) consisting of diagonal crack and HAZ crack was observed. White film was formed at th hot crack region in the fractured surface after it was immersed to 10% NaOH water. In the case of A5083 alloy, white films in {TEX}$C_{C}${/TEX} crack and {TEX}$C_{D}${/TEX} crack region were composed of low melting phases, {TEX}$Fe_{2}SiAl_{8}${/TEX} and eutectic phases, $Mg_2$Al$_3$ and $Mg_2$Si. Such films observed $CuAl_2$, {TEX}$Mg_{32}(Al,Zn)_{3}${/TEX}, MgZn$_2$, $Al_2$CuMg and $Mg_2$Si were observed in the whitely etched films near {TEX}$C_{C}${/TEX} crack and {TEX}$C_{D}${/TEX} crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Sim in the case of A7N01 alloy, respectively. The {TEX}$C_{C}${/TEX} and {TEX}$C_{D}${/TEX} cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of {TEX}$C_{M}${/TEX} crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The {TEX}$C_{U}${/TEX} crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification.

• Journal of Welding and Joining
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• v.32 no.6
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• pp.41-46
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• 2014

In this study, cracking susceptibility of laser cladding was investigated according to the processing parameters such as laser power, scan speed and feeding rate with blended powders of stellite#6 and technolase40s (WC+NiCr). The solidification microstructure of clad was composed of Co-based dendrite structures with ${\gamma}+Cr7C3$ eutectic phases at the dendritic boundaries. The crack propagation showed transgranular fracture along dendritic boundaries due to brittle chrome carbide at the eutectic phases. From results of fractography experiments, the fracture surface was typical cleavage brittle fracture in the clad and substrate. The number of clad cracks, caused by a tensile stress after the solidification, increased with increase of laser power, scan speed and feeding rate. Increase of the laser power caused large pores by facilitating WC decarburizing reaction. And the pores affected increase of crack susceptibility. High scan speed caused increment of clad cracks due to thermal stress and WC particle fractures. Also, increase of the feeding rate accompanied an amount of WC particles causing crack initiation and decarburizing reaction.

• Journal of Powder Materials
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• v.10 no.1
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• pp.15-20
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• 2003

Hybrid $A1_2O_3-TiC$ ceramic particle reinforced 6061 and 5083 Al composite powders were prepared by the combination of twin rolling and stone mill crushing process, followed by consolidating processes of cold compaction, degassing and hot extrusion. The composite bar consists of lamellar structure of ceramic particle rich area and matrix area, in which the hybrid was decomposed into each TiC of about $3-4\mutextrm{m}$ and $AI_2O_3$ particles of about $1-2\mutextrm{m}$ in diameter. It also found that fine $Mg_2Si$ precipitates of about 30 nm were embedded in the matrix, which have grains of about 3 $\mutextrm{m}$. Higher UTS was measured at the 5083 composite bar compared to the conventionally fabricated composite, due to again refinement effect by the rapid solidification. No particle was shown to form in the interface between the matrix and reinforcement, whereas carbon was diffused into the matrix.