• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.77-81
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• 2020

Resistive RAM (ReRAM) is a strong candidate for the next-generation nonvolatile memories which use the resistive switching characteristic of transition metal oxides. The resistive switching behaviors originate from the redistribution of oxygen vacancies inside of the oxide film by applied programming voltage. Therefore, controlling the oxygen vacancy inside transition metal oxide film is most important to obtain and control the resistive switching characteristic. In this study, we introduced an applying electric field into photochemical metal-organic deposition (PMOD) process to control the oxidation state of metal oxide thin film during the photochemical reaction by UV exposure. As a result, the surface oxidation state of FeOx film could be successfully controlled by the electric field-assisted PMOD (EFAPMOD), and the controlled oxidation states were confirmed by x-ray photoelectron spectroscopy (XPS) I-V characteristic. And the resistive switching characteristics with the oxidation-state of the surface region could be controlled effectively by adjusting an electric field during EFAPMOD process.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2003.09a
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• pp.379-381
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• 2003

Metal sorption onto the ICS (Iron oxide coated sand) was studied in batch experiments. Heavy metal cations such as Cd, Pb, and Cu, and a metal anion, As, which sporadically exist in mine sites, were tested for the sorptive removal by ICS. In low pH conditions As showed the highest removal efficiency compared to the other metal cations. And the sorption removal of As was apparently pH-independent reaction. However, removal of metal cations increased with pH and above pH 7 most metal cations showed very low soluble concentrations after treatment. Such a high removal ratio of metal cations above the neutral pH appeared predominantly due to precipitation.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.544-547
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• 2004

Glass frits for dielectric layers are mostly used for screen printing process. Several additives have already been known to be well matched with lead-oxide glasses system. The use of lead oxide, however, creates environmental problems, so many recent studies on lead-free glasses compositions have been carried out. A study of the suitability between additives and lead-free glass system is needed. In this study, we have used a screen-printing method to make thick films of lead-oxide glass and lead-free glass using different additives, and analyzed and compared the transmittance of the thick films.

• Journal of the Korean Electrochemical Society
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• v.13 no.1
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• pp.10-18
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• 2010

Nanostructured metal oxides have been widely used in the research fields of photoelectrochemistry, photochemistry and opto-electronics. Dye-sensitized solar cell is a typical example because it is based on nanostructured $TiO_2$. Since the discovery of dye-sensitized solar cell in 1991, it has been considered as a promising photovoltaic solar cell because of low-cost, colorful and semitransparent characteristics. Unlike p-n junction type solar cell, dye-sensitized solar cell is photoelectrochemical type and is usually composed of the dye-adsorbed nanocrystalline metal oxide, the iodide/tri-iodide redox electrolyte and the Pt and/or carbon counter electrode. Among the studied issues to improve efficiency of dye-sensitized solar cell, nanoengineering technologies of metal oxide particle and film have been reviewed in terms of improving optical property, electron transport and electron life time.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.143-146
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• 2009

The metal-supported SOFC has beed developed as a new concept of SOFC which has higher mechanical strength. However, the mass transfer rate in this type of SOFC may be decreased due to the contact layer and the support layer and that can cause the low performance. Therefore, numerical analysis of the heat and mass transfer characteristics in a metal-supported solid oxide fuel cell(SOFC) is studied in this paper. Governing equations and electrochemical equations are calculated simultaneously. And the numerical results are compared with the experimental results for the code validation. The current density, temperature, and pressure drop are suggested as numerical results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• Korean Journal of Materials Research
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• v.33 no.2
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• pp.77-86
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• 2023

High-temperature oxidation of a Ni-based superalloy was analyzed with samples taken from gas turbine blades, where the samples were heat-treated and thermally exposed. The effect of Cr/Ti/Al elements in the alloy on high temperature oxidation was investigated using an optical microscope, SEM/EDS, and TEM. A high-Cr/high-Ti oxide layer was formed on the blade surface under the heat-treated state considered to be the initial stage of high-temperature oxidation. In addition, a PFZ (γ' precipitate free zone) accompanied by Cr carbide of Cr₂₃C₆ and high Cr-Co phase as a kind of TCP precipitation was formed under the surface layer. Pits of several ㎛ depth containing high-Al content oxide was observed at the boundary between the oxide layer and PFZ. However, high temperature oxidation formed on the thermally exposed blade surface consisted of the following steps: ① Ti-oxide formation in the center of the oxide layer, ② Cr-oxide formation surrounding the inner oxide layer, and ③ Al-oxide formation in the pits directly under the Cr oxide layer. It is estimated that the Cr content of Ni-based superalloys improves the oxidation resistance of the alloy by forming dense oxide layer, but produced the σ or µ phase of TCP precipitation with the high-Cr component resulting in material brittleness.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.31-32
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• 2010

• Journal of Environmental Science International
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• v.15 no.3
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• pp.221-227
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• 2006

Oxidative TCE decomposition over $TiO_2$-supported single and complex metal oxide catalysts has been conducted using a continuous flow type fixed-bed reactor system. Different types of commercial $TiO_2$ were used for obtaining the supported catalysts via an incipient wetness technique. Among a variety of titanias and metal oxides used, a DT51D $TiO_2\;and\;CrO_x$ would be the respective promising support and active ingredient for the oxidative TCE decomposition. The $TiO_2-based\;CrO_x$ catalyst gave a significant dependence of the catalytic activity in TCE oxidation reaction on the metal loadings. The use of high $CrO_x$ contents for preparing $CrO_x/TiO_2$ catalysts might produce $Cr_2O_3$ crystallites on the surface of $TiO_2$, thereby decreasing catalytic performance in the oxidative decomposition at low reaction temperatures. Supported $CrO_x$-based bimetallic oxide systems offered a very useful approach to lower the $CrO_x$ amounts without any loss in their catalytic activity for the catalytic TCE oxidation and to minimize the formation of Cl-containing organic products in the course of the catalytic reaction.