• International Journal of Precision Engineering and Manufacturing
• /
• v.7 no.1
• /
• pp.13-17
• /
• 2006

Self-Assembled Monolayers (SAMs) formed by alkanethiol adsorption to thin metal film are widely being investigated for applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecules and bio molecules. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAM structure formation.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.12
• /
• pp.160-166
• /
• 2004

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated fer applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecule and bio molecule. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAMs structure formation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.642-642
• /
• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.14 no.10
• /
• pp.4685-4693
• /
• 2013

Present work deals with a shape optimal design to minimize the weight of the mask-frame used in the process of OLED vapor deposition by the fine metal mask. A design concept for an optimal shape of the frame to increase the stiffness and to reduce the weight is derived using the topology optimization, shape design variables of the frame by adopting slots being defined. An optimal shape is determined by solving the shape optimization problem to minimize the weight of the frame under constraints of the maximum displacement. Weight of the optimal design is 117.6 kg, which is reduced by 138.4 kg(54.1%) of that of the first design, 256 kg.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.12
• /
• pp.173-183
• /
• 1995

Blue light of 0.15mW at 417.6nm is generated in a quasi-phase-matched LITaO$_{3}$ optical waveguide. A new heat-treatment technique using a metal-oxide mask is proposed to fabricate the periodic domain-inverted grating with less degraded optical properties. The mask promotes the proton indiffusion by inhibition of the proton outdiffusion during the heat treatment. It reduces the amount of the initial proton exchange for the domain inversion and prevents the formation of crystal defects on the surface accompanied by the proton outdiffusion. Consequently, it minimizes the degradation of nonlinear coefficient and scattering loss caused by the initial proton exchange.

• Journal of Sensor Science and Technology
• /
• v.17 no.1
• /
• pp.35-40
• /
• 2008

Low power bridge type micro gas sensors were fabricated by micro machining technology with TMAH (Tetra Methyl Ammonium Hydroxide) solution. The sensing devices with different heater materials such as metal and poly-silicon were obtained using CMOS (Complementary Metal Oxide Semiconductor) compatible process. The tellurium films as a sensing layer were deposited on the micro machined substrate using shadow silicon mask. The low power micro gas sensors showed high sensitivity to NO with high speed. The pure tellurium film used micro gas sensor showed good sensitivity than transition metal (Pt, Ti) used tellurium film.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.204-209
• /
• 2005

A small size broadband microstrip patch antenna with small ground plane has been fabricated using MEMS. Multiple layer substrates are used to realize small size and broadband characteristics. The microstrip patch is divided into 3 pieces and each patch is connected to each other using a metal microstrip line. The fabrication process is simple and only one mask is needed. Two types of microtrip antennas are fabricated. Type A is the micros trip antenna with metal lines and type B is the microstrip antenna without metal lines. The size of proposed microstip antenna is $8^{*}12^{*}2mm^{3}$ and the experimental results show that the antenna type A and type B have the bandwidth of 420 MHz at 5.3 GHz and 480 MHz at 5.66 GHz, respectively.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.603-604
• /
• 2006

A small size broadband microstrip patch antenna with small ground plane has been fabricated using MEMS. Multiple layer of high and low dielectric substrates are used to realize small size and broadband characteristics. The microstrip patch is divided into 4 pieces and each patch is connected to each other using a metal microstrip line. The fabrication process is very simple and only one mask is needed. Two types of microtrip antennas are fabricated. Type A is the microstrip antenna with metal lines and type B is the microstrip antenna without metal lines. The size of proposed microstip antenna is $8*12*2mm^3$ and the experimental results show that the antenna type A and type B have the bandwidth of 420MHz at 5.3 GHz and 480MHz at 5.66 GHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.358-361
• /
• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Journal of Korean Society of Occupational and Environmental Hygiene
• /
• v.11 no.1
• /
• pp.42-47
• /
• 2001

The purpose of this study was to investigate for filtration efficiency of several dust masks, comparing with filtration efficiency certified by KOSHA(Korea Occupational Safety & Health Agency), and to require of the right use of protective respirators. Using a welding fume generator and chamber, several dust masks, which were widely used in the workplaces in korea, were tested for their filtering efficiency for stainless steel arc welding fume. The filtration efficiency testing system consisted of a welding fume generator, a chamber and a filtration unit. The filtration unit was made of a mask which was inserted into the sampling cassette and another sampling cassette, which contained mixed cellulose ester filter paper. These two cassettes were connected with tubing. Stainless steel arc welding fume generator was delivered into an chamber. The welding fume in the chamber was passed into the filtration unit with flow rate of 30 liter/min. The welding fume filtration efficiency was evaluated by gravimetric measurement. Metal concentrations in the welding fume before and after filtration were measured with inductive coupling plasma analyzer. Following results were obtained: Filtration efficiency of welding fume for common hygienic mask was 63.82% and the average efficiencies for A, B, C, D, E, F and G masks were 94.62%, 96.58%, 83.20%, 82.76%, 77.25%, 86.55% and 93.22%, respectively. Our results indicate that dust masks used widely in the welding workplaces in korea are not proper for protecting worker's health and then the use of fume mask should be required.