• 한국분말재료학회지
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• 제28권1호
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• pp.25-30
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• 2021

The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.111-115
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• 1997

Iron-doped LiNbO$_3$ crystals were grown by floating zone(FZ) method with different [Li]/[Nb] ratio in order to investigate doping effects of transition metal impurity in LiNbO$_3$ crystal. The grown crystals were analyized edge in UV/VIS/IR spectrometry and EPMA(electron probe micro-analysis). The absorption edge in UV-VIS region and OH-absorption peak in IR region were investigated. The change of Fe concentration along the solidification direction was also investigated

• 한국결정학회지
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• 제9권2호
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• pp.159-167
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• 1998

천연에서 발견되는 유색수정은 자수정, 연수정, 황수정, 청수정, 녹수정, 장미수정 등 그 색의 종류에 따라 크게 6가지로 분류되며 발색 기구에 따라 색중심(color center), 전이금속 불순물(transition metal impurity), 산란(scattering), 전하이동(charge transfer) 등 4가지로 분류된다. 이들은 천연에서 고온고압의 열수가 냉각되면서 그 안아 녹아있던 광물질이 재결정하여 생성된 것이다. 이러한 유색수정은 실험실에서도 합성되며 그 방법은 천연 수정의 생성 과정과 유사하다. 그러나 천연수정 중의 일부는 실험실에서 성장하기가 거의 불가능하기 때문에 다른 방법을 이용하여 유사한 색을 가지게 한다. 본 논문에서는 불순물 원소의 종류 및 수정 격자내의 위치, 최외각 전자의 상태에 따라 색이 달라지는 것을 고찰하고 이러한 유색수정을 합성하는 원리에 대하여 논하고자 한다.

• 한국주조공학회지
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• 제6권4호
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• pp.284-289
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• 1986

Decarburization phenomena have been studied by plasma in stainless steel, plain carbon steel and cast iron. It was also investigated the movement of impurity element P,S in the plasma jet metal pool. The plasma jet was obtained by $Ar\;-\;CO_2$ gas mixture with 5 kVA DC power source. It produced enough temperature to dissociate into activated oxygen atom by reaction of $CO_2{\leftrightarrows}CO+O^+$ and it reacted with ${\underline{C}}$ in metal pool. Decarburization rate was increased about 5 times in comparing with the conventional induction melted metal pool by $CO_2$ gas decarburization. Even under the Ar plasma jet, decarburization was obtained by agitation of metal bath by $Ar^+$ bombardment and dilution phenomena of carbon atom under the very high plasma temperature. But heavy element P and S are not much removed because they are too heavy in mass to be activated by $Ar^+$ion bombardment. Desulphurization was achieved by $Ar\;-\;CO_2$ plasma in plain carbon steel and cast iron by the reaction of $SO_2({\underline{S}}+O^+)$. But dephosphorization could not be obtained by $Ar\;-\;CO_2$ plasma, because gaseous reaction of phosphorous oxide (${\underline{P}}+O^+$) was not existed.

• ETRI Journal
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• 제24권6호
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• pp.455-461
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• 2002

This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.

• 전기전자학회논문지
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• 제15권2호
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.444-448
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• 2010

Based on first-principles calculations, we study the magnetic properties of Co, Ni, Fe, V, and Mn impurities in ZnO. The stabilities of the ferromagnetic state and the magnetic moment of each impurity largely depend on the amount of doped electron or hole. For lightly doped n-type ZnO, it is found that the doping of Ni ions is the most effective for inducing ferromagnetism, while Fe ions show the most stable ferromagnetic couplings for heavily doped n-type samples. The characteristics of the magnetic interactions of Co ions are similar with those of Fe ions, but Co ions require much larger amount of doped electron than Fe ions to show the ferromagnetic couplings. The ferromagnetic coupling between Mn and V ions is unstable in n-type conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 추계학술대회 논문집 전기설비전문위원
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• pp.235-236
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• 2008

Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples.

• 전기전자학회논문지
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• 제17권4호
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• pp.531-536
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• 2013

The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.67-71
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• 2003

실리콘 주괴(ingot)에서 실리콘 웨이퍼를 제조할 때 사용되는 슬러리는 SiC 연마재와 절삭유를 포함한다. 실리콘 웨이퍼 제조 시 생긴 폐슬러지에서 SiC 연마재와 절삭유는 분리되어 재활용된다. 본 연구는 폐슬러지 Si 분말에 C분말을 혼합하여 SiC를 합성하는 것에 관한 것이다. 다양한 크기의 SiC 분말과 휘스커가 제조되었으며 기존의 휘스커의 크기보다 작은 나노미터 크기의 휘스커도 발생하였다. 일반적으로 휘스커는 금속 불순물을 첨가하여 제조되는데, 본 연구에서 나노미터 크기의 휘스커 발생은 폐슬러지에 첨가되어있는 미세한 크기의 금속불순물의 영향으로 판단된다.