• Title/Summary/Keyword: Metal Front Case

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Connector Design in Press Forming Process to Prevent Frame Twisting of Metal Front Case for Mobile Phone (휴대폰용 금속 프론트 케이스의 프레스 성형공정에서 프레임의 형상오차 저감을 위한 연결부 형상설계)

  • Lee, I.K.;Lee, C.J.;Son, Y.K.;Lee, J.M.;Kim, D.H.;Kim, B.M.
    • Transactions of Materials Processing
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    • v.20 no.2
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    • pp.104-109
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    • 2011
  • The metal front case of a mobile phone is manufactured by press forming and welding of thin metal sheets. Twisting of the frame after the forming process is one of main obstacle for the assembly with reinforcement by welding. This study introduces a method preventing twisting of the metal front case frame in press forming. The spring-back after forming produces twisting of the frame, which leads to a low structural stiffness. To reduce twisting, connectors are required to reinforce the structural stiffness of the frame. In this study, the twisting profile is evaluated using a finite element(FE) analysis for various connector shapes. The actual connector shape is determined by minimization of the frame twisting within the tolerance of the FE-analysis. To verify the validity of the proposed blank shape, a forming experiment is performed and the twisting profile is measured using a 3D laser scanning method. The dimensional accuracy is found to be within the tolerance and in good agreement with the FE-analysis.

Steel processing effects on crash performance of vehicle safety related applications

  • Doruk, Emre
    • Steel and Composite Structures
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    • v.24 no.3
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    • pp.351-358
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    • 2017
  • Due to the increasing competition, automotive manufacturers have to manufacture highly safe and light vehicles. The parts which make up the body of the vehicle and absorb the energy in case of a crash, are usually manufactured with sheet metal forming methods such as deep drawing, bending, trimming and spinning. The part may get thinner, thicker, folded, teared, wrinkled and spring back based on the manufacturing conditions during manufacturing and the type of application methods. Transferring these effects which originate from the forming process to the crash simulations that are performed for vehicle safety simulations, makes accurate and reliable results possible. As a part of this study, firstly, the one-step and incremental sheet metal forming analysis (deep drawing + trimming + spring back) of vehicle front bumper beam and crash boxes were conducted. Then, crash performances for cases with and without the effects of sheet metal forming were assessed in the crash analysis of vehicle front bumper beam and crash box. It was detected that the parts absorbed 12.89% more energy in total in cases where the effect of the forming process was included. It was revealed that forming history has a significant effect on the crash performance of the vehicle parts.

Quantum modulation of the channel charge and distributed capacitance of double gated nanosize FETs

  • Gasparyan, Ferdinand V.;Aroutiounian, Vladimir M.
    • Advances in nano research
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    • v.3 no.1
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    • pp.49-54
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    • 2015
  • The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

Multicriteria shape design of a sheet contour in stamping

  • Oujebbour, Fatima-Zahra;Habbal, Abderrahmane;Ellaia, Rachid;Zhao, Ziheng
    • Journal of Computational Design and Engineering
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    • v.1 no.3
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    • pp.187-193
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    • 2014
  • One of the hottest challenges in automotive industry is related to weight reduction in sheet metal forming processes, in order to produce a high quality metal part with minimal material cost. Stamping is the most widely used sheet metal forming process; but its implementation comes with several fabrication flaws such as springback and failure. A global and simple approach to circumvent these unwanted process drawbacks consists in optimizing the initial blank shape with innovative methods. The aim of this paper is to introduce an efficient methodology to deal with complex, computationally expensive multicriteria optimization problems. Our approach is based on the combination of methods to capture the Pareto Front, approximate criteria (to save computational costs) and global optimizers. To illustrate the efficiency, we consider the stamping of an industrial workpiece as test-case. Our approach is applied to the springback and failure criteria. To optimize these two criteria, a global optimization algorithm was chosen. It is the Simulated Annealing algorithm hybridized with the Simultaneous Perturbation Stochastic Approximation in order to gain in time and in precision. The multicriteria problems amounts to the capture of the Pareto Front associated to the two criteria. Normal Boundary Intersection and Normalized Normal Constraint Method are considered for generating a set of Pareto-optimal solutions with the characteristic of uniform distribution of front points. The computational results are compared to those obtained with the well-known Non-dominated Sorting Genetic Algorithm II. The results show that our proposed approach is efficient to deal with the multicriteria shape optimization of highly non-linear mechanical systems.

Laser scribing for buried contact solar cell processing (전극함몰형 태양전지의 제조를 위한 레이저 scribing)

  • 조은철;조영현;이수홍
    • Electrical & Electronic Materials
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    • v.9 no.6
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    • pp.593-599
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    • 1996
  • Laser scribing of silicon plays an important role in metallization including the grid pattern and the front surface geometry which means aspect ratio of metal contacts. To make a front metal electrode of buried contact solar cell, we used ND:YAG lasers that deliver average 3-4W at TEM$\_$00/ mode power to sample stage. The Q-switched Nd:YAG laser of 1.064 gm wavelength was used for silicon scribing with 20-40.mu.m width and 20-200.mu.m depth capabilities. After silicon slag etching, the groove width and depth for buried contact solar cell are -20.mu.m and 30-50.mu.m respectively. Using MEL 40 Nd:YAG laser system, we can scribe the silicon surface with 18-23.mu.m width and 20-200.mu.m depth controlled by krypton arc lamp power, scan speed, pulse frequency and beam focusing. We fabricated a buried contact Silicon Solar Cell which had an energy conversion efficiency of 18.8 %. In this case, the groove width and depth are 20.mu.m and 50.mu.m respectively.

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Plasmonic Enhanced Light Absorption by Silver Nanoparticles Formed on Both Front and Rear Surface of Polycrystalline Silicon Thin Film Solar Cells

  • Park, Jongsung;Park, Nochang;Varlamov, Sergey
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.493-493
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    • 2014
  • The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

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Front Surface Grid Design for High Efficiency Solar Cells

  • Gangopadhyay Utpal;Kim, Kyung-Hae;Basu Prabir Kanti;Dhungel Suresh Kumar;Jung, Sung-Wook;Yia, Jun-Sin
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.2
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    • pp.78-84
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    • 2005
  • Standard crystalline solar cells are generally fabricated with the front grid pattern of silver paste contact. We have reported a detailed theoretical analysis of the proposed segmented cross grid line pattern in this paper. This work was carried out for the optimization of spacing and width of grid finger, main busbar and sub-busbar. The overall electrical and optical losses due to front contact were brought down to $10\%$ or even less as compared to the usual loss of $15\%$ or more in the conventional screen printed silver paste technology by choosing proper grid pattern and optimizing the grid parameters. The total normalized power loss for segmented mesh grid with plated metal contact was also observed and the total power loss could be brought down to $10.04\%$ unlike $11.57\%$ in the case of continuous grid and plated contact. This paper is able to outline the limitations of conventional screen printed contact.

Sectional Analysis of Sheet Metal Stamping Processes Using Bending Energy Augmented Membrane Element and Continuous Contact Treatment (굽힘 에너지가 보강된 박막 요소와 연속 접촉 처리를 이용한 스탬핑 공정의 단면 해석)

  • 윤정환;김종봉;양동열;유동진;한수식
    • Journal of the Korean Society for Precision Engineering
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    • v.15 no.4
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    • pp.58-67
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    • 1998
  • A sectional analysis of sheet metal forming process with an arbitrary tool shape is proposed in the present work. To improve the numerical convergence in the conventional membrane sectional analysis, the Bending Energy Augmented Membrane (BEAM) elements had been developed. The BEAM elements particularly improve the stability and convergence of the finite element method for the case of deep drawing. In this work, the FERGUBON spline (C$^2$-continuous) was used to fit the deformed mesh to smooth the given curves and calculate the local curvature of the deformed sheet. The fittings of the deformed sheet and tool surface profile ensure the stability and the convergence of the finite element analysis of highly nonlinear stamping processes. A center floor section and front fender section are analyzed to show the accuracy and robustness of the approach. The results obtained by the proposed approach are compared with the available experimental data.

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Multi-Channel Analog Front-End for Auditory Nerve Signal Detection (청각신경신호 검출 장치용 다중채널 아나로그 프론트엔드)

  • Cheon, Ji-Min;Lim, Seung-Hyun;Lee, Dong-Myung;Chang, Eun-Soo;Han, Gun-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.1
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    • pp.60-68
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    • 2010
  • In case of sensorineural hearing loss, auditory perception can be activated by electrical stimulation of the nervous system via electrode implanted into the cochlea or auditory nerve. Since the tonotopic map of the human auditory nerve has not been definitively identified, the recording of auditory nerve signal with microelectrode is desirable for determining the tonotopic map. This paper proposes the multi-channel analog front-end for auditory nerve signal detection. A channel of the proposed analog front-end consists of an AC coupling circuit, a low-power 4th-order Gm-C LPF, and a single-slope ADC. The AC coupling circuit transfers only AC signal while it blocks DC signal level. Considering the bandwidth of the auditory signal, the Gm-C LPF is designed with OTAs adopting floating-gate technique. For the channel-parallel ADC structure, the single-slope ADC is used because it occupies the small silicon area. Experimental results shows that the AC coupling circuit and LPF have the bandwidth of 100 Hz - 6.95 kHz and the ADC has the effective resolution of 7.7 bits. The power consumption per a channel is $12\;{\mu}W$, the power supply is 3.0 V, and the core area is $2.6\;mm\;{\times}\;3.7\;mm$. The proposed analog front-end was fabricated in a 1-poly 4-metal $0.35-{\mu}m$ CMOS process.

Analyzing the Effect of Si Surface Morphology on Front Electrode Formation (전면 전극 형성 시 표면 형상이 미치는 영향 분석)

  • Han, Hyebin;Choi, Dongjin;Kang, Dongkyun;Park, HyunJung;Bae, Suhyun;Kang, Yoonmook;Lee, Hae-Seok
    • Current Photovoltaic Research
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    • v.7 no.4
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    • pp.130-133
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    • 2019
  • The Ag crystallite formed during the formation of the front electrode forms a contact between the metal of the electrode and the emitter of the cell. Contact between the electrode and emitter plays an important role in collecting electrons generated by the solar cell. Therefore, Ag crystallite formation is an important factor. In order for solar cells to have good characteristics, it is important to understand the factors influencing the Ag crystallite formation. Factors affecting the formation of Ag crystallites include Si emitter, morphology, Si defect and firing temperature. The influence of surface morphology on Ag crystallite formation was confirmed throughout this study. In the case of fine texturing, the Ag crystallites were formed at the pointed parts. The finer the texturing, the sharper areas and more Ag crystallites were formed. This was confirmed by SEM image and FF calculation.