• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.225-228
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• 2005

In this work, we studied the optimized copper thickness in Cu ECP (Electrochemical Plating). In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge (bump, hump or over-plating amount), Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness. In the aspect of bump and dishing, the bulge increased according as target plating thickness decreased. Dishing of edge was larger than center of wafer. Also in case of electrical property, metal line resistance distribution became broad gradually according as Cu ECP thickness decreased. In conclusion, at least $20\%$ reduced Cu ECP thickness from current baseline; $0.8\;{\mu}m$ and $1.0\;{\mu}m$ are suitable to be adopted as newly optimized Cu ECP thickness for local and intermediate layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.803-809
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• 2005

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.38-41
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• 2004

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.703-703
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• Journal of Periodontal and Implant Science
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• v.31 no.1
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• pp.1-23
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• 2001

Chitosan is biodegradable natural polymer that has been demonstrated its ability to improve wound healing, and calcium metaphosphate(CMP) is a unique class of phosphate minerals having a polymeric structure. In this study, chitosan/CMP and platelet derived growth factor(PDGF-BB) loaded chitosan/CMP sponges were developed, and the effect of the sponges on bone regeneration and their possibility as scaffolds for bone formation by three-dimensional osteoblast culture were examined. PDGF-BB loaded chitosan/CMP sponges were prepared by freeze-drying of a mixture of chitosan solution and CMP powder, and soaking in a PDGF-BB solution. Fabricated sponge retained its 3-dimensional porous structure with $100-200\;{\mu}m$ pores. The release kinetics of PDGF-BB loaded onto the sponge were measured in vitro with $^{125}I-labeled$ PDGF-BB. In order to examine their possibility as scaffolds for bone formation, fetal rat calvarial osteoblastic cells were isolated, cultured, and seeded into the sponges. The cell-sponge constructs were cultured for 28 days. Cell proliferation, alkaline phosphatase activity were measured at 1, 7, 14 and 28 days, and histologic examination was performed. In order to examine the effect on the healing of bone defect, the sponges were implanted into rat calvarial defects. Rats were sacrificed 2 and 4 weeks after implantation and histologic and histomorphometrical examination were performed. An effective therapeutic concentration of PDGF-BB following a high initial burst release was maintained throughout the examination period. PDGF-BB loaded chitosan/CMP sponges supported the proliferation of seeded osteoblastic cells as well as their differentiation as indicated by high alkaline phosphatase activities. Histologic findings indicated that seeded osteoblastic cells well attached to sponge matrices and proliferated in a multi-layer fashion. In the experiments of implantation in rat calvarial defects, histologic and histomorphometric examination revealed that chitosan/CMP sponge promoted osseous healing as compared to controls. PDGF-BB loaded chitosan/CMP sponge further echanced bone regeneration. These results suggested that PDGF-BB loaded chitosan/CMP sponge was a feasable scaffolding material to grow osteoblast in a three-dimentional structure for transplantation into a site for bone regeneration.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.56-59
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• 2011

The characterization of the chemical mechanical polishing (CMP) process for undensified phophosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been used by experimenters to understand the relationship between the input variables and responses of interest in a simple and efficient way, and it typically is beneficial for determining the appropriatesize of experiments with multiple process variables and making statistical inferences for the responses of interest. The equipment controllable parameters used to operate the machine consist of the down force of the wafer carrier, pressure on the back side wafer, table and spindle speeds (SS), slurry flow (SF) rate, pad condition, etc. None of these are independent ofeach other and, thus, the interaction between the parameters also needs to be understoodfor improved process characterization in CMP. In this study, we selected the five controllable equipment parameters the most recommendedby process engineers, viz. the down force (DF), back pressure (BP), table speed (TS), SS, and SF, for the characterization of the CMP process with respect to the material removal rate and film uniformity in percentage terms. The polished material is undensified PSG which is widely used for the plananization of multi-layered metal interconnects. By statistical modeling and the analysis of the metrology data acquired from a series of $2^{5-1}$ fractional factorial designs with two center points, we showed that the DF, BP and TS have the greatest effect on both the removal rate and film uniformity, as expected. It is revealed that the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that process control based on a better understanding of the process is the key to success in current semiconductor manufacturing, in which the size of the wafer is approaching 300 mm and is scheduled to continuously increase up to 450 mm in or slightly after 2012.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.115-118
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• 2011

Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters, such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of $2^{5-1}$ fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.

• Korean Journal of Microbiology
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• v.30 no.4
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• pp.305-309
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• 1992

Cytosine deaminase (EC 3.5.4.1) from BaciNus stc~urorhermophilus was partially purified 7.2-fold with an overall yield of 52.7%. The partially purified enzyme deiiminated cytosine only.but not 5-methylcytosine and 5-fluorocytosine. The apparent Michaclis constant. Km valuefor cytosine was 5.9 mM. The enzyme was relatively stable in the range of pH 4.0 to 7.0.furthermore extremely thermo-stable : more than 75'X) of the activity was remained afterheating at 80$^{\circ}$C for I0 min at pH 6.5. The enzyme had a pH optimum at around pH7.0 to 7.5. and temperature optimum at 35 to 31$^{\circ}$C. And the activation energ (En value)determined from an Arrhenius plot was 26 Kcal/mol. The enzyme activity was stronglyinhibited by heavy metal ions such as Cd", Hg". Cut' at 1 mM, anJ by o-phenanthroline,and p-chloromcrcuribcnzoate at I mM. But the enrymc activity was activatetl increased byGMP, and CMP at 1 mM.ased by GMP, and CMP at 1 mM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.565-566
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• 2006

Slurry used in metal chemical mechanical polishing normally consists of an oxidizer, a complexing agent, a corrosion inhibitor and an abrasive. This paper investigates effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$ as an oxidizer. In order to study chemical effects of a citric acid, x-ray photoelectron spectroscopy were performed on Cu sample after Cu etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but Cu/$Cu_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu Surface decrease. According to decrease of wear resistance on Cu surface, removal rate increases from $285\;{\AA}/min$ to $8645\;{\AA}/min$ in Cu CMP.