• Title/Summary/Keyword: Memory research

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Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

  • Jung, Soon-Won;Na, Bock Soon;Baeg, Kang-Jun;Kim, Minseok;Yoon, Sung-Min;Kim, Juhwan;Kim, Dong-Yu;You, In-Kyu
    • ETRI Journal
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    • v.35 no.4
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    • pp.734-737
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    • 2013
  • Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

Inhibitory effect of carvacrol on lipopolysaccharide-induced memory impairment in rats

  • Lee, Bombi;Yeom, Mijung;Shim, Insop;Lee, Hyejung;Hahm, Dae-hyun
    • The Korean Journal of Physiology and Pharmacology
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    • v.24 no.1
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    • pp.27-37
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    • 2020
  • Neuroinflammation is an important process underlying a wide variety of neurodegenerative diseases. Carvacrol (CAR) is a phenolic monoterpene commonly used as a food additive due to its antibacterial properties, but it has also been shown to exhibit strong antioxidative, anti-inflammatory, and neuroprotective effects. Here, we sought to investigate the effects of CAR on inflammation in the hippocampus and prefrontal cortex, as well as the molecular mechanisms underlying these effects. In our study, lipopolysaccharide was injected into the lateral ventricle of rats to induce memory impairment and neuroinflammation. Daily administration of CAR (25, 50, and 100 mg/kg) for 21 days improved recognition, discrimination, and memory impairments relative to untreated controls. CAR administration significantly attenuated expression of several inflammatory factors in the brain, including interleukin-1β, tumor necrosis factor-α, and cyclooxygenase-2. In addition, CAR significantly increased expression of brain-derived neurotrophic factor (BDNF) mRNA, and decreased expression of Toll-like receptor 4 (TLR4) mRNA. Taken together, these results show that CAR can improve memory impairment caused by neuroinflammation. This cognitive enhancement is due to the anti-inflammatory effects of CAR medicated by its regulation of BDNF and TLR4. Thus, CAR has significant potential as an inhibitor of memory degeneration in neurodegenerative diseases.

Preparation and Analysis of the Deployment Behavior of Shape Memory Polymer Composite Antennas (형상기억고분자 복합재료 안테나의 제조 및 전개 거동 분석)

  • An, Yongsan;Kim, Jinsu;Goo, Nam Seo;Park, Miseon;Kim, Yeontae;Park, Jong Kyoo;Yu, Woong-Ryeol
    • Composites Research
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    • v.31 no.6
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    • pp.347-354
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    • 2018
  • Shape memory polymer composites have been studied for deployable antennas in space because they have advantages of lightweight, large deformability, good processability, and low cost. In this research, shape memory polymer composites (SMPCs) were manufactured using carbon nanotubes (CNTs) as reinforcements and were used to fabricate SMPC antenna. The SMPCs were prepared by dispersing CNTs in the polymer matrix. Various dispersion methods were investigated to determine the most suitable one, focusing on the mechanical properties of SMPCs including their fracture behavior. The shape memory properties of SMPCs were measured and finally, the deployment behavior of the SMPC antenna was analyzed.

A Hardware-Based String Matching Using State Transition Compression for Deep Packet Inspection

  • Kim, HyunJin;Lee, Seung-Woo
    • ETRI Journal
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    • v.35 no.1
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    • pp.154-157
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    • 2013
  • This letter proposes a memory-based parallel string matching engine using the compressed state transitions. In the finite-state machines of each string matcher, the pointers for representing the existence of state transitions are compressed. In addition, the bit fields for storing state transitions can be shared. Therefore, the total memory requirement can be minimized by reducing the memory size for storing state transitions.

Radiation Effects of Proton Particles in Memory Devices

  • Lho, Young-Hwan;Kim, Ki-Yup
    • ETRI Journal
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    • v.29 no.1
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    • pp.124-126
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    • 2007
  • In this letter, we study the impact of single event upsets (SEUs) in space or defense electronic systems which use memory devices such as EEPROM, and SRAM. We built a microcontroller test board to measure the effects of protons on electronic devices at various radiation levels. We tested radiation hardening at beam current, and energy levels, measured the phenomenon of SEUs, and addressed possible reasons for SEUs.

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An Overview of SiC as the Nonvolatile Random-Access Memory Material

  • Cheong, Kuan Yew
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.63-66
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    • 2004
  • The extraordinary intrinsic properties of SiC have made this material a suitable choice to use in high temperature, high frequency, and high voltage applications. In additional to these, SiC could be employed as the based material for nonvolatile memory applications, mainly due to its extremely low thermal-generation rate at room temperature. In this paper, the reasons of using this material in this particular application is presented and the development of the application over the past fifteen years is reviewed.

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A Performance Study on CPU-GPU Data Transfers of Unified Memory Device (통합메모리 장치에서 CPU-GPU 데이터 전송성능 연구)

  • Kwon, Oh-Kyoung;Gu, Gibeom
    • KIPS Transactions on Computer and Communication Systems
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    • v.11 no.5
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    • pp.133-138
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    • 2022
  • Recently, as GPU performance has improved in HPC and artificial intelligence, its use is becoming more common, but GPU programming is still a big obstacle in terms of productivity. In particular, due to the difficulty of managing host memory and GPU memory separately, research is being actively conducted in terms of convenience and performance, and various CPU-GPU memory transfer programming methods are suggested. Meanwhile, recently many SoC (System on a Chip) products such as Apple M1 and NVIDIA Tegra that bundle CPU, GPU, and integrated memory into one large silicon package are emerging. In this study, data between CPU and GPU devices are used in such an integrated memory device and performance-related research is conducted during transmission. It shows different characteristics from the existing environment in which the host memory and GPU memory in the CPU are separated. Here, we want to compare performance by CPU-GPU data transmission method in NVIDIA SoC chips, which are integrated memory devices, and NVIDIA SMX-based V100 GPU devices. For the experimental workload for performance comparison, a two-dimensional matrix transposition example frequently used in HPC applications was used. We analyzed the following performance factors: the difference in GPU kernel performance according to the CPU-GPU memory transfer method for each GPU device, the transfer performance difference between page-locked memory and pageable memory, overall performance comparison, and performance comparison by workload size. Through this experiment, it was confirmed that the NVIDIA Xavier can maximize the benefits of integrated memory in the SoC chip by supporting I/O cache consistency.

Memory Characteristics of Al2O3/La2O3/SiO2 Multi-Layer Structures for Charge Trap Flash Devices (전하 포획 플래시 소자를 위한 Al2O3/La2O3/SiO2 다층 박막 구조의 메모리 특성)

  • Cha, Seung-Yong;Kim, Hyo-June;Choi, Doo-Jin
    • Korean Journal of Materials Research
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    • v.19 no.9
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    • pp.462-467
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    • 2009
  • The Charge Trap Flash (CTF) memory device is a replacement candidate for the NAND Flash device. In this study, Pt/$Al_2O_3/La_2O_3/SiO_2$/Si multilayer structures with lanthanum oxide charge trap layers were fabricated for nonvolatile memory device applications. Aluminum oxide films were used as blocking oxides for low power consumption in program/erase operations and reduced charge transports through blocking oxide layers. The thicknesses of $SiO_2$ were from 30 $\AA$ to 50 $\AA$. From the C-V measurement, the largest memory window of 1.3V was obtained in the 40 $\AA$ tunnel oxide specimen, and the 50 $\AA$ tunnel oxide specimen showed the smallest memory window. In the cycling test for reliability, the 30 $\AA$ tunnel oxide sample showed an abrupt memory window reduction due to a high electric field of 9$\sim$10MV/cm through the tunnel oxide while the other samples showed less than a 10% loss of memory window for $10^4$ cycles of program/erase operation. The I-V measurement data of the capacitor structures indicated leakage current values in the order of $10^{-4}A/cm^2$ at 1V. These values are small enough to be used in nonvolatile memory devices, and the sample with tunnel oxide formed at $850^{\circ}C$ showed superior memory characteristics compared to the sample with $750^{\circ}C$ tunnel oxide due to higher concentration of trap sites at the interface region originating from the rough interface.

Pre-existing Immunity to Endemic Human Coronaviruses Does Not Affect the Immune Response to SARS-CoV-2 Spike in a Murine Vaccination Model

  • Ahn Young Jeong;Pureum Lee;Moo-Seung Lee;Doo-Jin Kim
    • IMMUNE NETWORK
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    • v.23 no.2
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    • pp.19.1-19.10
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    • 2023
  • Endemic human coronaviruses (HCoVs) have been evidenced to be cross-reactive to severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). Although a correlation exists between the immunological memory to HCoVs and coronavirus disease 2019 (COVID-19) severity, there is little experimental evidence for the effects of HCoV memory on the efficacy of COVID-19 vaccines. Here, we investigated the Ag-specific immune response to COVID-19 vaccines in the presence or absence of immunological memory against HCoV spike Ags in a mouse model. Pre-existing immunity against HCoV did not affect the COVID-19 vaccine-mediated humoral response with regard to Ag-specific total IgG and neutralizing Ab levels. The specific T cell response to the COVID-19 vaccine Ag was also unaltered, regardless of pre-exposure to HCoV spike Ags. Taken together, our data suggest that COVID-19 vaccines elicit comparable immunity regardless of immunological memory to spike of endemic HCoVs in a mouse model.

Interfacial and Tensile Properties of TiNi Shape Memory Alloy reinforced 6061 Al Smart Composites by vacuum casting (진공주조법에 의한 TiNi 형상기억합금 강화 6061Al 지적 복합재료의 계면 및 인장 특성)

  • Park, Gwang-Hun;Park, Seong-Gi;Sin, Sun-Gi;Park, Yeong-Cheol;Lee, Gyu-Chang;Lee, Jun-Hui
    • Korean Journal of Materials Research
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    • v.11 no.12
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    • pp.1057-1062
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    • 2001
  • We investigated the change of mechanical properties for TiNi shape memory alloy by heat treatment. 6061Al matrix composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum casting. TiNi alloy has the maximum tensile strength at 673K treated and there is no change of tensile strength and hardness at 448K treated. The composites, prepared by vacuum casting, showed good interface bonding by vacuum casting. It was about 3$\mu\textrm{m}$ of thickness of the diffusion layer. Tensile strength of the composite was in higher than that of 6061Al alloy as increased value of about 70MPa at room temperature and about 110MPa at 363K. We thought that the increase of the tensile strength at 363K was due to reverse transformation of the TiNi shape memory alloy.

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