Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor |
Jung, Soon-Won
(Components & Materials Research Laboratory, ETRI)
Na, Bock Soon (Components & Materials Research Laboratory, ETRI) Baeg, Kang-Jun (Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute) Kim, Minseok (Components & Materials Research Laboratory, ETRI, School of Electrical Engineering, Korea University) Yoon, Sung-Min (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) Kim, Juhwan (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) Kim, Dong-Yu (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) You, In-Kyu (Components & Materials Research Laboratory, ETRI) |
1 |
K.-H. Kim et al., "Ferroelectric DRAM(FEDRAM) FET with Metal/ |
2 | B.H. Park et al., "Lanthanum-Substituted Bismuth Titanate for Use in Non-volatile Memories," Nature, vol. 401, no. 6754, 1999, pp. 6820-684. |
3 | I.A. Ukaegbu et al., "A Study of Ferroelectric Properties of the Oscillator Model of PZT-22," ETRI J, vol. 33, no. 1, Feb. 2011, pp. 132-135. DOI ScienceOn |
4 |
S.-M. Yoon et al., "Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below |
5 | S.-W. Jung et al., "Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer," Current Appl. Phys., vol. 10, 2010, pp. e58-e60. DOI ScienceOn |
6 | K.-J. Baeg et al., "Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits," ACS Appl. Mater. Interfaces, vol. 4, 2012, pp. 6176-6184. DOI ScienceOn |
7 | S.K. Hwang et al., "Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation," Adv. Mater., vol. 24, 2012, pp. 5910-5914. DOI ScienceOn |
8 | K.-J. Baeg et al., "Polymer Dielectrics and Orthogonal Solvents Effects for High Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors," ETRI J, vol. 33, no. 6, Dec. 2011, pp.887-896. DOI |
9 |
J. Kim et al., "Highly Soluble Poly(thienylenevinylene) Derivatives with Charge-Carrier Mobility Exceeding |
10 | S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd ed., NJ: Wiley-Interscience, 2007. |
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