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http://dx.doi.org/10.4218/etrij.13.0212.0280

Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor  

Jung, Soon-Won (Components & Materials Research Laboratory, ETRI)
Na, Bock Soon (Components & Materials Research Laboratory, ETRI)
Baeg, Kang-Jun (Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute)
Kim, Minseok (Components & Materials Research Laboratory, ETRI, School of Electrical Engineering, Korea University)
Yoon, Sung-Min (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University)
Kim, Juhwan (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology)
Kim, Dong-Yu (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology)
You, In-Kyu (Components & Materials Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.35, no.4, 2013 , pp. 734-737 More about this Journal
Abstract
Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.
Keywords
Inkjet-printing; nonvolatile memory; ferroelectric; p(VDF-TrFE);
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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