ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Radiation Effects of Proton Particles in Memory Devices

  • Lho, Young-Hwan (Department of Railroad Electricity and Information Communication, Woosong University) ;
  • Kim, Ki-Yup (Radiation Application Team, Korea Atomic Energy Research Institute)
  • Received : 2006.08.24
  • Published : 2007.02.28
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Abstract

In this letter, we study the impact of single event upsets (SEUs) in space or defense electronic systems which use memory devices such as EEPROM, and SRAM. We built a microcontroller test board to measure the effects of protons on electronic devices at various radiation levels. We tested radiation hardening at beam current, and energy levels, measured the phenomenon of SEUs, and addressed possible reasons for SEUs.

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