• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• 한국정보처리학회논문지
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• 제4권8호
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• pp.2038-2059
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• 1997

프로세서의 속도, 주기억장치의 크기 및 엑세스 속도, 입출력 대역폭 등 컴퓨터의 물리적 속성은 사용자에게 주어질 때 고정되어 있다. 이러한 제한 하에서, 여러 사용자가 컴퓨터의 자원을 공유하는 다중 프로세스 시스템의 성능은 사용자 프로세스와 자원의 상관 관계를 모니터하고 조정함으로써 향상될 수 있다. 본 논문은 객체 지향 개념을 성능 관리에 적용하여 객체화된 시스템의 자원 관리자와 사용자 프로세스 및 성능 관리자 사이의 대화 프로토콜 및 객체의 속성을 정의함으로써 성능 관리 시스템의 표준을 제시한다. 이러한 표준화를 통해 성능 관리의 대상이 되는 객체와 성능 관리자를 독립적으로 개발할 수 있고, 성능 관리자를 통해 시스템의 성능을 통합적으로 관리할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1835-1837
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• 2005

$Bi_{3.25}Y_{0.75}Ti_3O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and dielectric properties of the BYT thin films. The BYT thin films were crystallized well at annealing temperature of $750^{\circ}C$ for 30min. Increasing the annealing temperature, the peak intensity of (117) and c-axis orientation were increased. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The thickness of the BYT thin films were 350nm. The dielectric constant and dielectric loss at a frequency of 100KHz were 73.3 and 0.021, respectively. The BYT thin films can be used as capacitors in the Ferroelectric Random Access Memory device.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• 한국정보전자통신기술학회논문지
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• 제1권2호
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• pp.27-32
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• 2008

A current research basically diverted towards an increase in the operational output with the minimization of the materials used, which ultimately scaled down the dimensions of ceramic electronic components. In this direction the nano-technology pave the revolutionary changes in particular the electronic industries. The applications of nano-sized particles or nano-sized materials are hence, playing a significant role for various purposes. The PZT(lead, zirconium, titanium) based ceramics which, are reported to be ferroelectric materials have their important applications in the areas of surface acoustic waves (SAW), filters, infrared detectors, actuators, ferroelectric random access memory, speakers, electronic switches etc. Moreover, these PZT materials possess the large electro mechanical coupling factor, large spontaneous polarization, low dielectric loss and low internal stress etc. Hence, keeping in view the unique properties of PZT piezoelectric ceramics we also tried to synthesize indigenously the small sized PZT ceramic powder in the laboratory by using the modified sol-gel approach. In this paper, propyl alcohol based sol-gel method was used for preparation of PZT piezoelectric ceramic. The powder obtained by this sol-gel process was calcined and sintering to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology was determined by high resolution scanning electron microscopy.

• 한국산학기술학회논문지
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• 제7권5호
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• pp.901-906
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• 2006

본 논문에서는 디지털 카메라의 사진을 메모리 카드를 통해 입력받고 디스플레이하며 각 사진에 대한 음성 레코딩과 MP3 플레이가 가능한 디지털 사진 액자 시스템 구현에 대하여 기술한다. Intel PXA255 보드의 시스템 제어를 위한 부트로더와 리눅스 커널을 포팅하며 외부 장치들을 위한 디바이스 드라이버를 작성한다. 리눅스 시스템 상에서 이미지 출력 및 음성 레코딩, MP3 플레어 기능을 구현하기 위해 마이크로윈도우즈 시스템의 구성 파일을 수정하고 응용 프로그램을 작성한다. 본 논문 연구를 통해서 저 전력, 고성능의 임베디드 프로세서와 리눅스 시스템을 이용한 디지털 사진 액자 개발에 쉽게 접근할 수 있으며 구현된 디바이스 드라이버와 응용 프로그램 개발 절차를 통해 임베디드 시스템 개발과 관련한 분야에 기초 자료로 사용할 수 있을 것이다.

• Journal of Information Processing Systems
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• 제14권1호
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• pp.140-149
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• 2018

Social data such as users' comments are unstructured in nature and up-to-date technologies for analyzing such data are constrained by the available storage space and processing time when fast storing and processing is required. On the other hand, it is even difficult in using a huge amount of dynamically generated social data to analyze the user features in a high speed. To solve this problem, we design and implement a topic association analysis system based on the latent Dirichlet allocation (LDA) model. The LDA does not require the training process and thus can analyze the social users' hourly interests on different topics in an easy way. The proposed system is constructed based on the Spark framework that is located on top of Hadoop cluster. It is advantageous of high-speed processing owing to that minimized access to hard disk is required and all the intermediately generated data are processed in the main memory. In the performance evaluation, it requires about 5 hours to analyze the topics for about 1 TB test social data (SNS comments). Moreover, through analyzing the association among topics, we can track the hourly change of social users' interests on different topics.