• Journal of KIISE:Computer Systems and Theory
• /
• v.28 no.9
• /
• pp.461-468
• /
• 2001

Though shared virtual memory (SVM) system promise low cost solutions for high performance computing they suffer from long memory latencies. These latencies are usually caused by repetitive invalidations on shared data. Since shared data are accessed through synchronization and the patterns by which threads synchronizes are repetitive, a prefetching scheme bases on such repetitiveness would reduce memory latencies. Based on this observation, we propose a prefetching technique which predicts future access behavior by analyzing access history per synchronization variable. Our technique was evaluated on an 8-node SVM system using the SPLASH-2 benchmark. The results show the our technique could achieve 34%~45% reduction in memory access latencies.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2011.05a
• /
• pp.136-139
• /
• 2011

The conventional semiconductor equipment has adopted SRAM module as the test pattern memory, which has a simple design and does not require refreshing. However, SRAM has its disadvantages as it takes up more space as its capacity becomes larger, making it difficult to meet the requirements of large memories and compact size. if DRAM is adopted as the semiconductor inspection equipment, it takes up less space and costs less than SRAM. However, DRAM is also disadvantageous because it requires the memory cell refresh, which is not suitable for the semiconductor examination equipments that require correct timing. Therefore, In this paper, we will proposed an algorithm for punctuality guarantee of memory-free inspection equipment using DDR2 SDRAM. And we will produced memory controller using punctuality guarantee algorithm.

• Journal of the Korea Society of Computer and Information
• /
• v.25 no.2
• /
• pp.21-29
• /
• 2020

The use of NAND flash memory is continuously increased with the demand of mobile data in the IT industry environment. However, the erase operations in flash memory require longer latency and higher power consumption, resulting in the limited lifetime for each cell. Therefore, frequent write/erase operations reduce the performance and the lifetime of the flash memory. In order to solve this problem, management techniques for improving the performance of flash based storage by reducing write and erase operations of flash memory with using disk buffers have been studied. In this paper, we propose a CPWL to minimized the number of write operations. It is a disk buffer management that separates read and write pages according to the characteristics of the buffer memory access patterns. This technique increases the lifespan of the flash memory and decreases an energy consumption by reducing the number of writes by arranging pages according to the characteristics of buffer memory access mode of requested pages.

• The KIPS Transactions:PartA
• /
• v.11A no.5
• /
• pp.373-382
• /
• 2004

In this paper, a register promotion technique that translates memory accesses to register accesses is presented to enhance embedded software performance. In the proposed method, a source code is profiled to generate a memory trace. From the profiling results, target functions with high dynamic call counts are selected, and the proposed register promotion technique is applied only to the target functions to save the compilation time. The memory trace of the target functions is searched for the memory accesses that result in cycle count reduction when replaced by register accesses, and they are translated to register accesses by modifying the intermediate code and allocating promotion registers. The experiments on MediaBench and DSPstone benchmark programs show that the proposed method increases the performance by 14% and 18% on the average for ARM and MCORE, respectively.

• Journal of Magnetics
• /
• v.7 no.3
• /
• pp.101-105
• /
• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.2
• /
• pp.147-152
• /
• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• Journal of Korea Multimedia Society
• /
• v.2 no.1
• /
• pp.80-88
• /
• 1999

In this paper, we propose a Special Memory for Graphics(SMGRA) which accelerates memory access time for graphics operations. The SMGRA has a rectangular array memory architecture which has already proposed by Whelan to process pixels in the rectangle area simultaneously, but the SMGRA should improve address decoding time and reduce the number of address pins by using address multiplexing scheme. The SMGRA has a Z-value comparator in the DRAM which is to convert read-modify-write Z buffer into single-write only operation that improves approximately 50% frame buffer access bandwidth.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.11
• /
• pp.20-25
• /
• 2016

This study addresses a low complexity and lossless frame memory compression algorithm based on block-buffer structure for efficient high resolution video processing. Our study utilizes the block-based MHT (modified Hadamard transform) for spatial decorrelation and AGR (adaptive Golomb-Rice) coding as an entropy encoding stage to achieve lossless image compression with low complexity and efficient hardware implementation. The MHT contains only adders and 1-bit shift operators. As a result of AGR not requiring additional memory space and memory access operations, AGR is effective for low complexity development. Comprehensive experiments and computational complexity analysis demonstrate that the proposed algorithm accomplishes superior compression performance relative to existing methods, and can be applied to hardware devices without image quality degradation as well as negligible modification of the existing codec structure. Moreover, the proposed method does not require the memory access operation, and thus it can reduce costs for hardware implementation and can be useful for processing high resolution video over Full HD.

• Journal of the Korea Society of Computer and Information
• /
• v.15 no.3
• /
• pp.1-10
• /
• 2010

As processor platforms are continuously moving toward wireless mobile systems, embedded mobile processors are expected to perform more and more powerful, and therefore the development of an efficient power management algorithm for these battery-operated mobile and handheld systems has become a critical challenge. It is well known that a memory system is a main performance limiter in the processor point of view. Although many DVFS studies have been considered for the efficient utilization of limited battery resources, recent works do not explicitly show the interaction between the processor and the memory. In this research, to properly reflect short/long-term memory access patterns of the embedded workloads in wireless mobile processors, we propose a memory buffer utilization as a new index of DVFS level prediction. The simulation results show that our solution provides 5.86% energy saving compared to the existing DVFS policy in case of memory intensive applications, and it provides 3.60% energy saving on average.

• Journal of KIISE:Databases
• /
• v.32 no.1
• /
• pp.12-23
• /
• 2005

In the past decade, advances in speed of commodity CPUs have iu out-paced advances in memory latency Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. To reduce memory access latency, cache memory incorporated in the memory subsystem. but cache memories can reduce the memory latency only when the requested data is found in the cache. This mainly depends on the memory access pattern of the application. At this point, previous research has shown that B+ trees perform much faster than T-trees because B+ trees are more cache conscious than T-trees, and also proposed 'Cache Sensitive B+trees' (CSB. trees) that are more cache conscious than B+trees. The goal of this paper is to make T-trees be cache conscious as CSB-trees. We propose a new index structure called a 'Cache Sensitive T-trees (CST-trees)'. We implemented CST-trees and compared performance of CST-trees with performance of other index structures.