• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.231-240
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• 2024

Titanium dioxide (TiO₂) holds significant scientific and technological relevance as a key photocatalyst and resistive random-access memory, demonstrating unique physicochemical properties and serving as an n-type semiconductor. Understanding the density and arrangement of oxygen vacancies (VOs) is crucial for tailoring TiO₂'s properties to diverse technological needs, driving increased interest in exploring oxygen vacancy complexes and superstructures. In this mini review, we summarize the recent understandings of the fundamental properties of oxygen vacancies in bulk rutile (R-TiO₂) and anatase (A-TiO₂) based on DFT and beyond method. We specifically focus on the excess electrons and their spatial arrangement of disordered single VO in bulk R and A-TiO₂, aligned with the experimental findings. We also highlight the theoretical works on investigating the geometries and stabilities of ordered VOs complexes in bulk TiO₂. This comprehensive review provides insights into the fundamental properties of excess electrons in reduced TiO₂, offering valuable perspectives for future research and technological advancements in TiO₂-based devices.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Applied Microscopy
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• v.38 no.4
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• pp.279-284
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• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.

• The KIPS Transactions:PartA
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• v.13A no.2 s.99
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• pp.123-136
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• 2006

The prefetching technique is an effective way to reduce the latency caused memory access. However, excessively aggressive prefetch not only leads to cache pollution so as to cancel out the benefits of prefetch but also increase bus traffic leading to overall performance degradation. In this thesis, a prefetch filtering scheme is proposed which dynamically decides whether to commence prefetching by referring a filtering table to reduce the cache pollution due to unnecessary prefetches In this thesis, First, prefetch hashing table 1bitSC filtering scheme(PHT1bSC) has been shown to analyze the lock problem of the conventional scheme, this scheme such as conventional scheme used to be N:1 mapping, but it has the two state to 1bit value of each entries. A complete block address table filtering scheme(CBAT) has been introduced to be used as a reference for the comparative study. A prefetch block address lookup table scheme(PBALT) has been proposed as the main idea of this paper which exhibits the most exact filtering performance. This scheme has a length of the table the same as the PHT1bSC scheme, the contents of each entry have the fields the same as CBAT scheme recently, never referenced data block address has been 1:1 mapping a entry of the filter table. On commonly used prefetch schemes and general benchmarks and multimedia programs simulates change cache parameters. The PBALT scheme compared with no filtering has shown enhanced the greatest 22%, the cache miss ratio has been decreased by 7.9% by virtue of enhanced filtering accuracy compared with conventional PHT2bSC. The MADT of the proposed PBALT scheme has been decreased by 6.1% compared with conventional schemes to reduce the total execution time.

• Journal of the Korean Institute of Traditional Landscape Architecture
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• v.39 no.3
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• pp.42-55
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• 2021

This study investigated the memories of the natives and the migrants who had been living with the 760-year-old Zelkova serrata located in the Keangnam Apartment Complex in Dogok 1-dong. Place memory is a newly illuminated concept since the 1980s, and is also used as a new research methodology for studying and recording multi-layered memories left in a place based on feelings and traces of vivid memories. The urban development of Gangnam, which began in the 1970s, quickly changed rural to apartment complexes. The natives of Yeokmal were scattered throughout the country, and new migrants moved in. In the process, zelkova serrata was managed in different ways from time to time, and residents also establish relationship in different ways. Natives used to take a rest in the tree or swing at Dan-o, and recognized it as a place to receive the god during the village ritual. In other words, they shared the entire process of life and death and were given various roles depending on the lives of the residents. It is also a direct experience that was experienced in detail and a place where collective memories of residents are melted. On the other hand, with the construction of Keangnam Apartment, the management of zelkova tree has become stricter, making it impossible for migrants to access. Migrants have come to enjoy zelkova serrata visually, and the annual Yeokmal Traditional Festival makes common memories in the city. In addition, many people personified trees and received mental comfort. In addition, the nature of the old big tree was highlighted in the background of the city, and the symbol of "uniqueness and speciality" was newly formed, which led to the formation of pride and attachment. Through the memories of the two subjects' zelkova tree, we were able to examine the memories of the tree value, and management of protected tree in the city.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.3
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• pp.154-166
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• 2009

Database query and reporting tools, OLAP tools and data mining tools are typical front-end tools in Business Intelligence environment which is able to support gathering, consolidating and analyzing data produced from business operation activities and provide access to the result to enterprise's users. Traditional reporting tools have an advantage of creating sophisticated dynamic reports including SQL query result sets, which look like documents produced by word processors, and publishing the reports to the Web environment, but data source for the tools is limited to RDBMS. On the other hand, OLAP tools and data mining tools have an advantage of providing powerful information analysis functions on each own way, but built-in visualization components for analysis results are limited to tables or some charts. Thus, this paper presents a system that integrates three typical front-end tools to complement one another for BI environment. Traditional reporting tools only have a query editor for generating SQL statements to bring data from RDBMS. However, the reporting tool presented by this paper can extract data also from OLAP and data mining servers, because editors for OLAP and data mining query requests are added into this tool. Traditional systems produce all documents in the server side. This structure enables reporting tools to avoid repetitive process to generate documents, when many clients intend to access the same dynamic document. But, because this system targets that a few users generate documents for data analysis, this tool generates documents at the client side. Therefore, the tool has a processing mechanism to deal with a number of data despite the limited memory capacity of the report viewer in the client side. Also, this reporting tool has data structure for integrating data from three kinds of data sources into one document. Finally, most of traditional front-end tools for BI are dependent on data source architecture from specific vendor. To overcome the problem, this system uses XMLA that is a protocol based on web service to access to data sources for OLAP and data mining services from various vendors.

• Journal of Internet Computing and Services
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• v.6 no.6
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• pp.13-22
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• 2005

This paper aims to develop a system for converting web contents to mobile contents that can be used on mobile devices. Since web contents generally consist of pop-up ad windows, a bunch of unnecessary images and useless links, it is difficult to efficiently display them on common mobile devices that have lower bandwidth and memory, as well as much smaller screen, than the online environment. It is also troublesome for mobile device users to directly access contents. Thus, there has been a great demand for a new method for extracting useful and adequate contents from web documents, and optimizing them for use on mobile phones, In the paper, a system based on WAP 2,0 and XHTML Basic, which is a content creation language adopted for WAP 2,0, has been suggested. The system is designed to convert web contents by using the conversion rules of the existing filtering method after making the size of web documents smaller. The adopted conversion rules use the XHTML Basic's module units so that modification and deletion can be carried out with ease. In addition, it has been defined in a XSL document written in XSLT to maintain the extensibility of conversion and the validity of documents, In order to allow it to efficiently work together with WAP l.X's legacy services, the system has been built in a way that can have modules, which analyze information about CC/PP profiles and mobile device headers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.255-255
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• 2016

Resistive random access memory (ReRAM)는 낮은 동작 전압, 빠른 동작 속도, 고집적화 등의 장점으로 인해 차세대 비휘발성 메모리 소자로써 많은 관심을 받고 있다. 최근에 ReRAM 절연막으로 NiOx, TiOx, AlOx TaOx, HfOx와 같은 binary metal oxide 물질들을 적용하는 연구가 활발히 진행되고 있다. 특히, HfOx는 안정적인 동작 특성을 나타낸다는 점에서 ReRAM 절연막 물질로 적합하다고 보고되고 있다. ReRAM 절연막을 형성할 때, 물리 기상 증착 방법 (PVD)이나 화학 기상 증착법 (CVD)과 같은 방법이 많이 이용된다. 이러한 증착 방법들은 고품질의 박막을 형성시킬 수 있는 장점이 있다. 하지만, 높은 온도에서의 공정과 고가의 진공 장비가 이용되기 때문에 경제적인 문제가 있으며, 기판 또는 금속에 플라즈마 손상으로 인한 문제가 발생할 수 있다. 따라서 이러한 문제점들을 개선하기 위해 용액 공정이 많은 관심을 받고 있다. 용액 공정은 공정과정이 간단할 뿐만 아니라 소자의 대면적화가 가능하고 공정온도가 낮으며 고가의 진공장비가 필요하지 않은 장점을 가진다. 따라서 본 연구에서는, 용액공정을 이용하여 HfOx 기반의 ReRAM 제작하였고 $25^{\circ}C$와 $85^{\circ}C$에서 ReRAM의 동작특성에 미치는 compliance current의 영향을 평가하였다. 실험 방법으로는, hafnium chloride (0.1 M)를 2-methoxyethanol에 충분히 용해시켜서 precursor를 제작하였다. 이후, p-type Si 기판 위에 습식산화를 통하여 300 nm 두께의 SiO2 절연층을 성장시킨 후, 하부전극을 형성하기 위해 electron beam evaporation을 이용하여 10/100 nm 두께의 Ti/Pt 전극을 증착하였다. 순차적으로, 제작된 산화물 precursor를 이용하여 Pt 위에 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30초의 조건으로 두께 35 nm의 HfOx 막을 증착하였다. 최종적으로, solvent 및 불순물을 제거하기 위해 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였으며, 상부 전극을 형성하기 위해 electron beam evaporation을 이용하여 Ti와 Al을 각각 50 nm, 100 nm의 두께로 증착하였다. ReRAM 동작에서 compliance current가 미치는 영향을 평가하기 위하여 compliance current를 10mA에서 1mA까지 변화시키면서 측정한 결과, $25^{\circ}C$에서는 compliance current의 크기와 상관없이 일정한 메모리 윈도우와 우수한 endurance 특성을 얻는 것을 확인하였다. 한편, $85^{\circ}C$의 고온에서 측정한 경우에는 1mA의 compliance current를 적용하였을 때, $25^{\circ}C$에서 측정된 메모리 윈도우 크기를 비슷하게 유지하면서 더 우수한 endurance 특성을 얻는 것을 확인하였다. 결과적으로, 용액공정 방법으로 제작된 ReRAM을 측정하는데 있어서 compliance current를 줄이면 보다 우수한 endurance 특성을 얻을 수 있으며, ReRAM 소자의 전력소비감소에 효과적이라고 기대된다.