• 한국공작기계학회논문집
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• 제17권5호
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• pp.70-75
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• 2008

This paper describes a tool-clamping/unclamping mechanism for application of a micro-spindle. The mechanism is based on one-way shape memory effect and interference-fit. The corresponding mathematical models and a few considerable design parameters are mentioned in this paper. Especially, necessary conditions for the clamping and unclamping operation are investigated through finite element analysis. The analysis results show that the differences between the diametral deformations of the tool holder in high temperature and that in low temperature are increased according to amounts of the interference. Thus the less interference between the tool-holder and the ring, the less tolerance to allow the clamping and unclamping operation because the inner diameter of the tool holder in high temperature should be smaller than the diameter of the tool shank, and that in low temperature should be larger than the diameter of the tool shank. In addition, the design for maximization of clamping force are investigated based on finite element analysis. The results show that the more amounts of the interference, the more clamping force. As the result, the interference should be considered as a important factor to maximize the tool clamping force.

• 한국생산제조학회지
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• 제25권1호
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• pp.1-6
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• 2016

Micromanufacturing is a useful system for reducing energy consumption. For micromanufacturing, tool clamping and workpiece clamping are important components to realize the machining process. Therefore, a shape memory alloy (SMA) ring type tool holder is developed. In addition, this holder needs cooling and heating processes to execute the tool clamping process. This study suggests a cooling/heating device based on peltier elements. The device will be applied to the heating/cooling process of an automatic tool changer (ATC) for the SMA tool holder. This study introduces the configuration and operating principle of the proposed ATC system. The description and prototype evaluation of this system were given. Plastic bolt and aluminum block were selected to enhance the cooling performance, and the installed tool was changed in 17 s during the experiments.

• 한국재료학회지
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• 제34권3호
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• pp.152-162
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• 2024

In this study, we introduce a novel TiN/Ag embedded TiO₂/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (V_o). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

• 한국생산제조학회지
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• 제19권6호
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• pp.889-894
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• 2010

Conventional shrink-fit tool holders have positive features, such as high accuracy, high strength, high stiffness and low sensitivity to centrifugal forces, but they require heavy investments for heating and cooling equipment. Generally the heating equipment has to heat the tool holder up to $200{\sim}300^{\circ}C$ for tool changes. This paper introduces a novel shrink-fit tool holder that is able to unclamp a tool at $40{\sim}50^{\circ}C$. This feature makes it possible to switch between the clamped and unclamped states by using a simple device, which has lower power, smaller size and lower cost than the heating equipment of the conventional shrink-fit tool holders. The proposed shrink-fit tool holder is able to expand its tool hole by using the shape memory alloys which are integrated in the tool holder body. Performances of the SMA shrink-fit tool holder were evaluated experimentally. The experimental results confirm that the proposed tool holder is feasible in aspects of clamping/unclamping operations, clamping force and repeatability of tool setup.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 춘계학술대회 논문집
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• pp.614-618
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• 2002

In hot strip mills, Portable Roll Scanner (the portable roll surface temperature and profile measuring device) can be used to calibrate on-line Process models for strip crown and flatness by measuring the thermal expansion and wear profile of the rolls. And the surface temperature measurement can be used to optimize the roll cooling system. Portable Roll Scanner consists of the measuring device, which has two contact inductive distance transducers for roll profile measurement and one infrared Pyrometer for surface temperature measurement, and computer-based controller that is equipped with the measuring device. By the wireless data communication, the data is transferred to the memory of notebook for further analysis. After roll extraction from mills, Portable Roll Scanner measure the roll profile and surface temperature simultaneously along the work roll face and display the results in the TFT color monitor of notebook. Portable Roll Scanner is useful at mill-side and roll grinding shop.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.45-50
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• 2012

A family of multi-die DRAM packages was developed that incorporate the full functionality of an SODIMM into a single package. Using a common ball assignment analogous to the edge connector of an SODIMM, a broad range of memory types and assembly structures are supported in this new package. In particular DDR3U, LPDDR3 and DDR4RS are all supported. The center-bonded DRAM use face-down wirebond assembly, while the peripherybonded LPDDR3 use the face-up configuration. Flip chip assembly as well as TSV stacked memory is also supported in this new technology. For the center-bonded devices (DDR3, DDR4 and LPDDR3 ${\times}16$ die) and for the face up wirebonded ${\times}32$ LPDDR3 devices, a simple manufacturing flow is used: all die are placed on the strip in a single machine insertion and are sourced from a single wafer. Wirebonding is also a single insertion operation: all die on a strip are wirebonded at the same time. Because the locations of the power signals is unchanged for these different types of memories, a single consolidated set of test hardware can be used for testing and burn-in for all three memory types.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.545-545
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• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• 대한안전경영과학회지
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• 제20권3호
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• pp.11-19
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• 2018

This study suggests a model of production information system that can reduce manufacturing lead time and uniformize quality by using DNC S/W as a part of constructing production information management system in the industrial field of the existing marine engine block manufacturing companies. Under the effect of development of this system, the NC machine interface device can be installed in the control computer to obtain the quality information of the workpiece in real time so that the time to inspect the process quality and verify the product defect information can be reduced by more than 70%. In addition, the reliability of quality information has been improved and the external credibility has been improved. It took 30 minutes for operator to obtain, analyze and manage the quality information when the existing USB memory is used, but the communication between the NC controller computer and the NC controller in real time was completed to analyze the workpiece within 10 seconds.

• 한국재료학회지
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• 제32권9호
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.