• Title/Summary/Keyword: Medium vacuum

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Observation of phase separation and ordering in the InAlAs epilayer grown on InP by MOCVD (저압 MOCVD 방법으로 성장된 InAlAs 에피층에서 상분리와 규칙 현상의 관찰)

  • Cho, Hyung-Koun;Lee, Bun;Baek, Jong-hyeob;Han, Won-Seok;Lee, Jeong-Yong;Kwon, Myoung-Seok
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.290-296
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    • 1999
  • We have studied the phase separation and ordering phenomeon of InAlAs epilayers grown on InP substrate by LP-MOCVD with DCXRD, PL, and TEM. From the intensity and FWHM of DCXRD and PL, we observed that the structural and optical quality of InAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation and ordering is 291, 246, and 28 meV in the InAlAs epilayers grown at $565^{\circ}C$, $615^{\circ}C$, and $700^{\circ}C$, respectively, and shows the same from the InAlAs epilayer town at 5$65^{\circ}C$ in which the HRTEM micrograph showed the lattice fringe between InAs-rich and AlAs-rich regions was tilted by $2^{\circ}$ due to composition difference. However the maximum degree of ordering by intensity of extra spots was obtained at medium growth temperature. The annealing experiment by RTA of sample grown at $565^{\circ}$ shows a maximum band-gap shift of 78eV at $880^{\circ}$ for 3 min, and TEM shows that the origin of the blue shift of band-gap is the complete disappearance of ordering. Through annealing we can conclude that short time annealing affects only ordering and that most of the total band-gap reduction (~3/4) occurs by phase separation.

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Evaluation of Various Packaging Systems on the Activity of Antioxidant Enzyme, and Oxidation and Color Stabilities in Sliced Hanwoo (Korean Cattle) Beef Loin during Chill Storage

  • Kang, Sun Moon;Kang, Geunho;Seong, Pil-Nam;Park, Beomyoung;Cho, Soohyun
    • Asian-Australasian Journal of Animal Sciences
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    • v.27 no.9
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    • pp.1336-1344
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    • 2014
  • The effects of various packaging systems, vacuum packaging (VACP), medium oxygen-modified atmosphere packaging (50% $O_2/20%$ $CO_2/30%$ $N_2$, MOMAP), MOMAP combined with vacuum skin packaging (VSP-MOMAP), high oxygen-MAP (80% $O_2/20%$ $CO_2/30%$ $N_2$, HOMAP), and HOMAP combined with VSP (VSP-HOMAP), on the activity of antioxidant enzyme, and oxidation and color stabilities in sliced Hanwoo (Korean cattle) beef loin were investigated at $4^{\circ}C$ for 14 d. Higher (p<0.05) superoxide dismutase activity and total reducing ability were maintained in VSP-MOMAP beef than in HOMAP beef. Lipid oxidation (2-thiobarbituric acid reactive substances, TBARS) was significantly (p<0.05) retarded in MOMAP, VSP-MOMAP, and VSP-HOMAP beef compared with HOMAP beef. Production of nonheme iron content was lower (p<0.05) in VSP-MOMAP beef than in HOMAP beef. Red color ($a^*$) was kept higher (p<0.05) in VSP-MOMAP beef compared with MOMAP, HOMAP, and VSP-HOMAP beef. However, VACP beef was found to have the most positive effects on the antioxidant activity, oxidation and red color stabilities among the various packaged beef. These findings suggested that VSP-MOMAP was second to VACP in improving oxidation and color stabilities in sliced beef loin during chill storage.

Improved Uniformity of GaAs/AlGaAs DBR Using the Digital Alloy AlGaAs Layer (디지털 합금 AlGaAs층을 이용하여 제작된 GaAs/AlGaAs DBR의 균일도 향상)

  • Cho, N.K.;Song, J.D.;Choi, W.J.;Lee, J.I.;Jeon, Heon-Su
    • Journal of the Korean Vacuum Society
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    • v.15 no.3
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    • pp.280-286
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    • 2006
  • A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

A Light Incident Angle Stimulated Memristor Based on Electrochemical Process on the Surface of Metal Oxide

  • Park, Jin-Ju;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.174-174
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    • 2014
  • Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

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Sputtering of Solid Surfaces at Ion Bombardment

  • Kang, Hee-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.20-20
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    • 1998
  • I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

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Plasma control by tuning network modification in 4MHz ionized-physical vapor deposition (4MHz I-PVD장치에서 정합회로를 이용한 플라즈마 제어)

  • 주정훈
    • Journal of the Korean Vacuum Society
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    • v.8 no.1
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    • pp.75-82
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    • 1999
  • Ion energy is one of the crucial property in thin film deposition by internal ICP assisted I-PVD. As ion energy is determined by the difference between the plasma potential and the substrate bias potential, ICP excitation frequency was tested with medium frequency of 4 MHz and two types of tuning circuits, alternate and floating LC network with a biasing resistor, were tested. The results showed that plasma potential was less than 5 V in a range of Ar pressures, 5mTorr to 30 mTorr, at 4 MHz RF 600 W and 60 V of maximum RF antenna voltage was maintained either at RF input or output terminal. By proper control of RLC circuit installed after after RF antenna, 50V of RF induced voltage on RF antenna was obtained at 500W input power. The total impedance of RF antenna and plasma was around 10$\Omega$, and minimum RF voltage was obtained with a condition of lowest reactance at most 0.05$\Omega$.

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Application of Graphene in Photonic Integrated Circuits

  • Kim, Jin-Tae;Choe, Seong-Yul;Choe, Chun-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.196-196
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    • 2012
  • Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

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Corrosion and Materials Selection for Bitumen with Heavy Naphthenic Acid in Canadian Oil Sands

  • Eun, Thomas Jung-Chul
    • Corrosion Science and Technology
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    • v.7 no.6
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    • pp.350-361
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    • 2008
  • Canada's oil sands contain one of the largest reserves of oil in the world. According to recent estimates, there are nearly 180 billion barrels of oil in the Canadian oil sands trapped in a complex mixture of sand, water and clay. More than 40 companies have been currently operating or developing oil sands facilities since the first production in 1967. The process of oil sands upgrading is similar with down stream refinery, but the corrosion environment in upgrading refinery is often more severe than in the refinery because of high chlorides, mineral contents, carbonic acid, heavy viscosity and fouling, higher naphthenic acid [$NA-R(CH_{2})nCOOH$], and greater sulfur contents. Naphthenic acid corrosion (NAC) which is one of the most critical corrosion issues in up & downstream refinery plants was observed for the first time in 1920's in refinery distillation processes of Rumania, Azerbaizan (Baku), Venezuela, and California. As a first API report, the 11th annual meeting stated sources and mechanism of NAC in early 1930's. API has been developing the risk base standards, such as API RP580, 571, and Publication 581 which are based on the worst NAC damage in the world since 2000. Nevertheless not only the NAC phenomena and control in Canadian sands oil process are not much widely known but also there are still no engineering guidances for the Canadian sands oil in API standards. This paper will give NAC phenomina and materials selection guidance against NA environment in Canadian oil sands upgrading processes.

A MEIS Study on Ge Eppitaxial Growth on Si(001) with dynamically supplied Atomic Hydrogen

  • Ha, Yong-Ho;Kahng, Se-Jong;Kim, Se-Hun;Kuk, Young;Kim, Hyung-Kyung;Moon, Dae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.156-157
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    • 1998
  • It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

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Effect of Sn Doping on the Thermoelectric Properties of P-Type Mg3Sb2 Synthesized by Controlled Melting, Pulverizing Followed by Vacuum Hot Pressing

  • Rahman, Md. Mahmudur;Kim, Il-Ho;Ur, Soon-Chul
    • Korean Journal of Materials Research
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    • v.32 no.3
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    • pp.132-138
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    • 2022
  • Zintl phase Mg3Sb2 is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg3Sb2 has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg3Sb2 was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg3Sb2 was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg3.8Sb2-xSnx (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg3.8Sb1.994Sn0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.